BU1508AX [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU1508AX |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总7页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1508AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
700
8
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
15
35
1.0
-
A
Ptot
T
hs ≤ 25 ˚C
-
W
V
VCEsat
ICsat
tf
IC = 4.5 A; IB = 1.1 A
-
4.5
0.4
A
ICM = 4.5 A; IB(end) = 1.1 A
0.6
µs
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
case
base
2
collector
emitter
b
3
case isolated
1
2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
700
8
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Base current (DC)
-
15
4
A
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
-
A
Base current peak value
Reverse base current
-
6
100
5
35
150
150
A
average over any 20 ms period
-
mA
A
Reverse base current peak value 1
Total power dissipation
Storage temperature
-
-
Ths ≤ 25 ˚C
W
˚C
˚C
-65
-
Junction temperature
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-hs
Rth j-a
Junction to heatsink
Junction to ambient
with heatsink compound
in free air
-
3.6
-
K/W
K/W
55
1 Turn-off current.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1508AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
heatsink
waveform;
R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
VEB = 7.5 V; IC = 0 A
IB = 1 mA
-
-
13.5
-
1.0
-
-
mA
V
V
7.5
700
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
VCEsat
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.1 A
-
-
1.0
V
V
V
VBEsat
hFE
hFE
Base-emitter saturation voltage
DC current gain
IC = 4.5 A; IB = 1.7 A
IC = 100 mA; VCE = 5 V
IC = 4.5 A; VCE = 1 V
-
-
-
1.1
-
7.0
13
5.5
4.0
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
80
-
pF
Switching times (line deflection
circuit)
Turn-off storage time
Turn-off fall time
ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;
-VBB = 4 V; (-dIB/dt = 0.6 A/µs)
ts
tf
5.0
0.4
6.0
0.6
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1508AX
ICsat
90 %
+ 50v
100-200R
IC
IB
10 %
Horizontal
tf
t
Oscilloscope
ts
IBend
Vertical
1R
t
100R
6V
30-60 Hz
- IBM
Fig.1. Test circuit for VCEOsust
.
Fig.4. Switching times definitions.
IC / mA
+ 150 v nominal
adjust for ICM
1mH
250
200
LB
BU1508AX
BY228
IBend
-VBB
100
0
12nF
min
VCE / V
VCEOsust
Fig.2. Oscilloscope display for VCEOsust
.
Fig.5. Switching times test circuit (BU1508AX).
ICsat
h FE
TRANSISTOR
100
10
1
IC
IB
DIODE
t
t
5V
IBend
1V
20us
26us
64us
Tj = 25 C
Tj = 125 C
VCE
0.1
10
0.01
1
t
IC / A
Fig.3. Switching times waveforms.
Fig.6. Typical DC current gain. hFE = f (IC)
parameter VCE
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1508AX
VBESAT / V
1.2
VCESAT / V
10
Tj = 25 C
Tj = 25 C
1.1
Tj = 125 C
Tj = 125 C
1.0
0.9
6A
4.5A
0.8
1
IC/IB=
3
4
0.7
3A
5
0.6
IC=2A
0.5
0.4
0.1
0.1
1
10
0.1
1
10
IC / A
IB / A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
Fig.10. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
VCESAT / V
1.0
Eoff / uJ
1000
IC/IB=
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
IC = 4.5A
3.5A
5
4
3
100
Tj = 25 C
Tj = 125 C
10
0.1
1
IC / A
10
0.1
1
10
IB / A
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
Fig.11. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC
VBESAT / V
1.2
ts, tf / us
12
11
10
9
Tj = 25 C
ts
1.1
1.0
0.9
0.8
0.7
0.6
Tj = 125 C
8
7
6
IC=
6A
4.5A
3A
2A
5
IC =
4.5A
4
3
3.5A
2
tf
1
0
0
1
2
IB / A
3
4
0.1
1
IB / A
10
Fig.9. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
Fig.12. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1508AX
Normalised Power Derating
PD%
120
IC / A
with heatsink compound
110
100
10
100
90
80
70
60
50
40
30
20
10
0
= 0.01
ICM max
IC max
tp =
10 us
II
Ptot max
0
20
40
60
80
Ths /
100
120
140
1
C
100 us
1 ms
Fig.13. Normalised power dissipation.
PD% = 100 PD/PD 25˚C = f (Ths)
I
Zth / (K/W)
10
0.1
0.01
10 ms
DC
0.5
0.2
1
0.1
0.1
0.05
1000
1
100
10
t
T
p
0.02
t
p
P
D =
D
VCE / V
Fig.15. Forward bias safe operating area. Ths = 25˚C
D = 0
t
I
Region of permissible DC operation.
T
II Extension for repetitive pulse operation.
0.01
1E-06
1E-04
1E-02
t / s
1E+00
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
Fig.14. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
September 1997
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1508AX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
6.4
0.8 max. depth
15.8
max
seating
plane
15.8
max.
19
max.
3 max.
not tinned
3
2.5
13.5
min.
1
2
3
M
0.4
1.0 (2x)
0.6
2.5
0.9
0.7
2.54
0.5
5.08
1.3
Fig.16. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1508AX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.100
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