BU1706AB [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU1706AB |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总7页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AB
GENERAL DESCRIPTION
High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for
use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1750
850
5
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
-
-
8
A
Ptot
T
mb ≤ 25 ˚C
100
1.0
-
W
V
VCEsat
ICsat
tf
IC = 1.5 A; IB = 0.3 A
-
1.5
0.25
A
ICM = 1.5 A; IB(on) = 0.3 A
0.6
µs
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
mb
base
2
collector
emitter
b
3
2
mb collector
e
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1750
850
5
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
-
8
A
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
-
3
5
100
4
100
150
150
A
-
A
average over any 20ms period
-
mA
A
Reverse base current peak value
Total power dissipation
Storage temperature
-
-
Tmb ≤ 25 ˚C
W
˚C
˚C
-65
-
Junction temperature
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-mb
Thermal resistance junction to mounting
base
-
1.25
K/W
Rth j-a
Thermal resistance junction to ambient
minimum footprint, FR4 board
55
-
K/W
February 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AB
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
ICES
Collector cut-off current 1
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = 1500 V
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
-
-
1.0
20
mA
µA
;
2.0
mA
IEBO
VCEOsust
Emitter cut-off current
VEB = 12 V; IC = 0 A
-
-
-
1
-
mA
V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
750
VCEsat
VBEsat
hFE
hFE
hFE
Collector-emitter saturation voltage IC = 1.5 A; IB = 0.3 A
-
-
8
12
5
-
-
-
18
7
1.0
1.3
-
35
-
V
V
Base-emitter saturation voltage
DC current gain
IC = 1.5 A; IB = 0.3 A
IC = 5 mA; VCE = 10 V
IC = 400 mA; VCE = 3 V
IC = 1.5 A; VCE = 1 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Switching times (resistive load)
ICon = 1.5 A; IBon = -IBoff = 0.3 A
ton
ts
tf
Turn-on time
1.1
5
0.75
1.5
6.5
1.0
µs
µs
µs
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH;
-VBB = 5 V
ts
tf
Turn-off storage time
Turn-off fall time
2.0
0.25
3.0
0.6
µs
µs
Switching times (inductive load)
ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
ts
tf
Turn-off storage time
Turn-off fall time
2.2
0.2
3.3
0.7
µs
µs
IC / mA
+ 50v
100-200R
250
200
Horizontal
Oscilloscope
Vertical
100
0
1R
300R
6V
min
VCEOsust
VCE / V
30-60 Hz
Fig.1. Test circuit for VCEOsust
.
Fig.2. Oscilloscope display for VCEOsust.
1 Measured with half sine-wave voltage (curve tracer).
February 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AB
VCC
VCC
R
L
LC
VIM
R
B
VCL
0
T.U.T.
IBon
LB
tp
T.U.T.
-VBB
T
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
Fig.6. Test Circuit RBSOA.
VCC = 150 V; -VBB = 5 V; LC = 2 mH; VCL ≤ 1500 V;
LB = 1 µH
ICon
ICon
90 %
90 %
10 %
90 %
IC
IC
ts
10 %
tf
ton
toff
tf
ts
t
IBon
toff
IB
IBon
IB
10 %
tr 30ns
t
-IBoff
-IBoff
Fig.4. Switching times waveforms with resistive load.
Fig.7. Switching times waveforms with inductive load.
Normalised Power Derating
PD%
VCC
120
110
100
90
80
70
60
50
40
30
20
10
0
LC
IBon
LB
T.U.T.
-VBB
0
20
40
60
80
Tmb /
100
120
140
C
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LB = 1 uH
Fig.8. Normalised power dissipation.
PD% = 100 PD/PD 25 ˚C = f (Tmb)
February 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AB
VBESAT / V
Zth / (K/W)
1.2
1.1
1
1E+01
1E+00
1E-01
1E-02
1E-03
Tj = 25 C
Tj = 125 C
0.5
0.2
0.1
0.05
0.9
0.8
0.7
0.6
IC =
3 A
tp
t
p
0.02
P
D =
D
T
2 A
D=0
t
1.5 A
0.5 A
T
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
0
1
2
IB / A
3
4
Fig.9. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Fig.12. Typical base-emitter saturation voltage.
VBEsat = f(IB); parameter IC
BU1706A
VBESAT / V
VCESAT / V
1.2
1.1
1
10
1
Tj = 25 C
Tj = 125 C
0.9
0.8
0.7
0.6
0.5
0.4
3A
2A
1.5 A
IC/IB =
4
5
6
IC = 0.5A
0.1
0.01
Tj = 25 C
Tj = 125 C
0.1
1
IC / A
10
0.01
0.1
1
10
IB / A
Fig.10. Typical base-emitter saturation voltage.
VBEsat = f(IC); parameter IC/IB
Fig.13. Typical collector-emitter saturation voltage.
VCEsat = f(IB); parameter IC
VCESAT / V
0
h FE
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
10
1
IC/IB =
5 V
6
5
4
1 V
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
0.1
0.1
1
IC / A
10
0.01
0.1
1
10
IC / A
Fig.11. Typical collector-emitter saturation voltage.
VCEsat = f(IC); parameter IC/IB
Fig.14. Typical DC current gain.
hFE = f(IC); parameter VCE
February 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AB
IC / A
IC / A
6
5
4
3
2
1
0
10
ICM
ICDC
Ptot
1
0
400
800
1200
1600
2000
VCE / V
tp =
Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax
0.1
100 us
1 ms
10 ms
DC
0.01
1
10
100
1000
VCE / V
Fig.15. Forward bias safe operating area. Tmb = 25 ˚C
I
Region of permissible DC operation.
Extension for repetitive pulse operation.
Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
II
NB:
February 1998
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AB
MECHANICAL DATA
Dimensions in mm
4.5 max
1.4 max
10.3 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.17. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.18. SOT404 : soldering pattern for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
February 1998
6
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AB
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1998
7
Rev 1.000
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