BU2525A [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU2525A |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总7页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525A
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0
-
-
1500
800
12
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
-
30
A
Ptot
T
mb ≤ 25 ˚C
-
125
5.0
-
W
V
VCEsat
ICsat
tf
IC = 8.0 A; IB = 1.6 A
-
8
0.2
A
ICM = 8.0 A; IB(end) = 1.1 A
0.35
µs
PINNING - SOT93
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
tab
base
2
collector
emitter
b
3
tab collector
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
800
12
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Base current (DC)
-
30
A
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
-
8
12
200
7
125
150
150
A
Base current peak value
Reverse base current
-
A
average over any 20 ms period
-
mA
A
Reverse base current peak value 1
Total power dissipation
Storage temperature
-
-
Tmb ≤ 25 ˚C
W
˚C
˚C
-65
-
Junction temperature
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-mb
Rth j-a
Junction to mounting base
Junction to ambient
-
-
1.0
-
K/W
K/W
in free air
45
1 Turn-off current.
November 1995
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
VEB = 7.5 V; IC = 0 A
IB = 1 mA
-
-
13.5
-
1.0
-
-
mA
V
V
7.5
800
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
VCEsat
VBEsat
hFE
Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A
-
-
6
5
-
-
13
7
5.0
1.3
26
V
V
Base-emitter saturation voltage
DC current gain
IC = 8.0 A; IB = 1.6 A
IC = 100 mA; VCE = 5 V
IC = 8 A; VCE = 5 V
hFE
10
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
145
-
pF
Switching times (32 kHz line
deflection circuit)
ICM = 8.0 A; LC = 260 µH; Cfb = 13 nF;
I
B(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V;
(-dIB/dt = 1.6 A/µs)
ts
tf
Turn-off storage time
Turn-off fall time
3.0
0.2
4.0
0.35
µs
µs
IC / mA
+ 50v
100-200R
250
200
Horizontal
Oscilloscope
100
0
Vertical
1R
100R
min
6V
VCE / V
30-60 Hz
VCEOsust
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
November 1995
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525A
I
hFE
CM
TRANSISTOR
100
10
1
IC
IB
DIODE
Tj = 25 C
5 V
Tj = 125 C
t
t
IBend
1 V
10us
13us
32us
VCE
0.1
1
10
100
t
IC / A
Fig.3. Switching times waveforms.
Fig.6. Typical DC current gain. hFE = f (IC)
parameter VCE
ICM
VBESAT / V
B
1.2
1.1
1
90 %
Tj = 25 C
Tj = 125 C
IC
0.9
0.8
0.7
0.6
0.5
0.4
10 %
tf
t
IC/IB=
3
ts
IB
IBend
4
5
t
0.1
1
10
- IBM
IC / A
Fig.4. Switching times definitions.
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
VCESAT / V
+ 150 v nominal
adjust for ICM
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
IC/IB =
5
4
3
Lc
Tj = 25 C
Tj = 125 C
LB
T.U.T.
BY228
IBend
-VBB
Cfb
0.1
10
1
100
IC / A
Fig.5. Switching times test circuit (BU2525A).
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
November 1995
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525A
VBESAT / V
ts, tf / us
1.2
1.1
1
12
11
10
9
Tj = 25 C
Tj = 125 C
8
ts
7
0.9
0.8
0.7
0.6
6
5
IC=
8 A
4
IC =
8 A
tf
3
6 A
5 A
4 A
2
7 A
1
1
0
0
1
2
3
4
0.1
10
IB / A
IB / A
Fig.9. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
Fig.12. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
Normalised Power Derating
VCESAT / V
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
10
Tj = 25 C
Tj = 125 C
8 A
1
6 A
5 A
IC = 4 A
0.1
0
20
40
60
80
Tmb /
100
120
140
0.1
1
IB / A
10
C
Fig.10. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
Fig.13. Normalised power dissipation.
PD% = 100 PD/PD 25˚C = f (Tmb)
Eoff / uJ
Zth / (K/W)
1000
100
10
10
1
IC = 8 A
0.5
7 A
0.2
0.1
0.05
0.1
0.02
t
T
p
t
p
P
D =
D
0.01
t
D = 0
T
0.001
0.1
1
10
1E-06
1E-04
1E-02
t / s
1E+00
IB / A
Fig.11. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; f = 32 kHz
Fig.14. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
November 1995
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525A
IC / A
100
tp =
= 0.01
ICM
40 us
ICDC
10
100 us
Ptot
1
1 ms
10 ms
DC
0.1
0.01
VCE / V
1000
1
10
100
Fig.15. Forward bias safe operating area. Tmb = 25 ˚C
CDC & ICM = f(VCE); ICM single pulse; parameter tp;
Second-breakdown limits independant of temperature.
I
November 1995
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525A
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
15.2
max
14
4.6
13.6
max
4.25
4.15
2 max
2
4.4
21
max
12.7
max
2.2 max
0.5
min
13.6
min
dimensions within
this zone are
uncontrolled
1
2
3
M
0.5
0.4
5.5
1.15
0.95
1.6
11
Fig.16. SOT93; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".
November 1995
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1995
7
Rev 1.200
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