BU2532AW [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU2532AW |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总6页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of high resolution monitors.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0
-
-
1500
800
16
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
-
40
A
Ptot
Tmb ≤ 25 ˚C
-
125
5.0
-
W
V
VCEsat
ICsat
ts
IC = 7.0 A; IB = 1.17 A
f = 82 kHz
-
7
1.4
A
ICsat = 7.0 A; f = 82 kHz
1.8
µs
PINNING - SOT429
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
base
2
collector
emitter
b
3
tab collector
2
1
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
800
16
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Base current (DC)
-
40
A
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
-
10
15
200
10
125
150
150
A
Base current peak value
Reverse base current
-
A
average over any 20 ms period
-
mA
A
Reverse base current peak value 1
Total power dissipation
Storage temperature
-
-
Tmb ≤ 25 ˚C
W
˚C
˚C
-55
-
Junction temperature
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-mb
Rth j-a
Junction to mounting base
Junction to ambient
-
-
1.0
-
K/W
K/W
in free air
45
1 Turn-off current.
September 1997
1
Rev 1.000
Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
IEBO
Emitter cut-off current
VEB = 7.5 V; IC = 0 A
IB = 1 mA
-
7.5
-
0.80
9
6
-
14
-
0.88
17
9
1.0
-
mA
V
V
V
BVEBO
VCEsat
VBEsat
hFE
Base-emitter breakdown voltage
Collector-emitter saturation voltage IC = 7.0 A; IB = 1.17 A
5.0
0.97
27
Base-emitter saturation voltage
DC current gain
IC = 7.0 A; IB = 1.17 A
IC = 1 A; VCE = 5 V
IC = 7 A; VCE = 5 V
hFE
12.5
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Switching times (82 kHz line
deflection dynamic test circuit).
Turn-off storage time
Turn-off fall time
ICsat = 7.0 A; LC = 100 µH; Cfb = 3 nF;
VCC = 138 V; IB(end) = 1.0 A
ts
tf
1.4
0.06
1.8
0.1
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.000
Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
I
Csat
hFE
TRANSISTOR
100
10
1
IC
IB
DIODE
VCE = 1 V
Tj = 85 C
Tj = 25 C
t
t
IBend
3.5us
5us
12.2us
VCE
0.01
0.1
1
10
100
t
IC / A
Fig.1. Switching times waveforms.
Fig.4. High and low DC current gain. hFE = f (IC)
VCE = 1 V
ICsat
90 %
hFE
100
10
1
VCE = 5 V
Tj = 85 C
Tj = 25 C
IC
10 %
tf
t
ts
IB
IBend
t
0.01
0.1
1
10
100
- IBM
IC / A
Fig.2. Switching times definitions.
Fig.5. High and low DC current gain. hFE = f (IC)
VCE = 5 V
+ 150 v nominal
adjust for ICsat
VCEsat / V
10
1
Tj = 85 C
Tj = 25 C
Lc
IC/IB = 10
IC/IB = 5
LB
T.U.T.
0.1
IBend
-VBB
Cfb
0.01
0.1
1
10
100
IC / A
Fig.3. Switching times test circuit.
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
September 1997
3
Rev 1.000
Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
VCC
VBEsat / V
1
0.9
0.8
0.7
0.6
IC = 9 A
LC
VCL
CFB
IC = 7 A
IBend
-VBB
LB
Tj = 85 C
Tj = 25 C
T.U.T.
0
1
2
3
4
IB / A
Fig.10. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 5 V;
LC = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH;
CFB = 1 - 10 nF; IB(end) = 1.0 - 2.0 A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
Normalised Power Derating
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
IC / A
40
30
20
10
0
Area where
fails occur
0
20
40
60
80
Tmb /
100
120
140
C
100
1000
1500
VCE / V
Fig.8. Normalised power dissipation.
PD% = 100 PD/PD 25˚C = f (Tmb)
Fig.11. Reverse bias safe operating area. Tj ≤ Tjmax
Zth / (K/W)
10
1
0.1
0.5
0.2
0.1
0.05
0.02
t
T
p
t
p
P
D =
D
0.01
t
D = 0
T
0.001
1E-06
1E-04
1E-02
t / s
1E+00
Fig.9. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
September 1997
4
Rev 1.000
Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
MECHANICAL DATA
Dimensions in mm
16 max
5.3 max
1.8
Net Mass: 5 g
o
3.5
max
5.3
7.3
3.5
21
max
seating
plane
15.5
max
2.5
4.0
max
15.5
min
1
2
3
0.9 max
2.2 max
3.2 max
1.1
0.4 M
5.45 5.45
Fig.12. SOT429; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.000
Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
6
Rev 1.000
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