BU4507AF [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU4507AF |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总7页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
800
8
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
-
-
15
45
3.0
-
A
Ptot
VCEsat
ICsat
Ths ≤ 25 ˚C
W
V
IC = 4 A; IB = 1 A
f = 16kHz
-
4
A
A
f = 56kHz
4
-
tf
Fall time
ICsat = 4 A; f = 16kHz
0.3
0.21
0.45
-
µs
µs
ICsat = 4 A; f = 56kHz
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
case
base
2
collector
emitter
b
3
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
800
8
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
IB
Collector current peak value
Base current (DC)
-
15
4
A
-
A
IBM
Base current peak value
Reverse base current peak value 1
Total power dissipation
-
6
5
45
150
150
A
-IBM
Ptot
Tstg
Tj
-
-
A
Ths ≤ 25 ˚C
W
˚C
˚C
Storage temperature
Junction temperature
-55
-
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-hs
Rth j-a
Junction to heatsink
Junction to ambient
with heatsink compound
in free air
-
2.8
-
K/W
K/W
35
1 Turn-off current.
August 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
-
-
2500
V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
IEBO
VCEOsust
Emitter cut-off current
VEB = 6 V; IC = 0 A
-
-
-
100
-
µA
V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
800
BVEBO
VCEsat
VBEsat
hFE
Emitter-base breakdown voltage
IB = 1 mA
7.5
-
13.5
-
-
3.0
1.01
-
V
V
V
Collector-emitter saturation voltages IC = 4 A; IB = 1 A
Base-emitter saturation voltage
DC current gain
IC = 4 A; IB = 1 A
IC = 100 mA; VCE = 5 V
IC = 4 A; VCE = 5 V
0.84
-
0.92
12
hFE
4.2
5.7
7.3
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
68
-
pF
Switching times (16 kHz line
deflection circuit)
ICsat = 4.0 A;IB1 = 0.8 A
(IB2 = -2.0 A)
ts
tf
Turn-off storage time
Turn-off fall time
3.8
0.30
4.6
0.45
µs
µs
Switching times (56 kHz line
deflection circuit)
ICsat = 4.0 A;IB1 = 0.8 A
(IB2 = -2.1 A)
ts
tf
Turn-off storage time
Turn-off fall time
2.4
0.21
-
-
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
August 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507AF
ICsat
90 %
+ 50v
100-200R
IC
IB
10 %
Horizontal
tf
t
Oscilloscope
ts
IB1
Vertical
1R
t
100R
6V
30-60 Hz
- IB2
Fig.1. Test circuit for VCEOsust
.
Fig.4. Switching times definitions.
IC / mA
+ 150 v nominal
adjust for ICsat
Lc
250
200
LB
T.U.T.
IBend
-VBB
100
0
Cfb
min
VCE / V
VCEOsust
Fig.2. Oscilloscope display for VCEOsust
.
Fig.5. Switching times test circuit.
ICsat
hFE
TRANSISTOR
100
IC
IB
DIODE
VCE = 1V
Ths = 25 C
Ths = 85 C
t
t
IB1
10
20us
26us
64us
IB2
VCE
1
0.001
0.01
0.1
1
10
t
IC / A
Fig.3. Switching times waveforms (16 kHz).
Fig.6. High and low DC current gain.
August 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507AF
hFE
VCEsat / V
100
10
1
10
1
VCE = 5V
Ths = 25 C
Ths = 85 C
Ths = 25 C
Ths = 85 C
IC/IB = 5
0.1
0.01
0.001
0.01
0.1
1
10
0.1
1
10
100
IC / A
IC / A
Fig.7. High and low DC current gain.
Fig.10. Typical collector-emitter saturation voltage.
VBEsat / V
1.2
1.1
1
VCC
Ths = 25 C
Ths = 85 C
LC
0.9
0.8
0.7
0.6
VCL
IBend
-VBB
LB
IC = 4 A
CFB
T.U.T.
0
0.5
1
1.5
2
2.5
3
IB / A
Fig.11. Typical base-emitter saturation voltage.
Fig.8. Test Circuit RBSOA.
ts/tf / us
10
IC / A
30
ICsat = 4 A
Ths = 85 C
Freq = 16 kHz
8
ts
20
10
0
6
4
2
tf
100
1500
1000
VCE / V
0
IB / A
3
0
0.5
1
1.5
2
2.5
Fig.9. Reverse bias safe operating area. Tj ≤ Tjmax
Fig.12. Typical collector storage and fall time.
IC =4 A; Tj = 85˚C; f = 16kHz
August 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507AF
Normalised Power Derating
Zth K/W
PD%
120
10
1
with heatsink compound
110
100
90
80
70
60
50
40
30
20
10
0
0.5
0.2
0.1
0.05
0.1
0.02
t
p
T
t
p
P
0.01
D =
D
0
t
T
0.001
0
20
40
60
80
Ths /
100
120
140
1.0E-07
1.0E-05
1.0E-03
t / s
1.0E-01
1.0E+01
C
Fig.13. Normalised power dissipation.
PD% = 100 PD/PD 25˚C
Fig.14. Transient thermal impedance.
August 1998
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507AF
MECHANICAL DATA
Dimensions in mm
15.3 max
5.2 max
Net Mass: 5.5 g
3.1
3.3
0.7
7.3
3.2
o
45
6.2
5.8
21.5
max
seating
plane
3.5 max
not tinned
3.5
15.7
min
1
2
3
1.2
1.0
0.7 max
2.0
2.1 max
M
0.4
5.45
5.45
Fig.15. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 1998
6
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507AF
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1998
7
Rev 1.100
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