BU4540AL [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU4540AL |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总4页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4540AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack
envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0
-
1500
800
25
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
40
A
Ptot
VCEsat
ICsat
Tmb ≤ 25 ˚C
-
125
3.0
-
W
V
IC = 16.0 A; IB = 4 A
f = 32kHz
-
16
8
A
A
f = 110kHz
-
tf
Storage time
ICsat = 16 A; f = 32kHz
t.b.f
t.b.f
t.b.f
t.b.f
µs
µs
ICsat = 8 A; f = 110kHz
PINNING - SOT430
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
base
2
collector
emitter
b
3
heat collector
sink
e
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
800
25
V
V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
-
-
A
ICM
-
40
A
IB
IBM
-IB(AV)
Ptot
Tstg
Tj
-
10
15
200
125
150
150
A
Base current peak value
Reverse base current
Total power dissipation
Storage temperature
Junction temperature
-
A
average over any 20 ms period
Tmb ≤ 25 ˚C
-
-
mA
W
˚C
˚C
-55
-
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-mb
Rth j-a
Junction to mounting base
Junction to ambient
-
-
1.0
-
K/W
K/W
in free air
35
January 1998
1
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4540AL
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 1
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
IEBO
Emitter cut-off current
VEB = 7.5 V; IC = 0 A
IB = 1 mA
-
7.5
-
t.b.f
-
4.2
-
14
-
1.0
-
mA
V
V
V
BVEBO
VCEsat
VBEsat
hFE
Base-emitter breakdown voltage
Collector-emitter saturation voltage IC = 16 A; IB = 4 A
3.0
1.0
-
Base-emitter saturation voltage
DC current gain
IC = 16 A; IB = 4 A
IC = 1A; VCE = 5 V
IC = 16 A; VCE = 5 V
-
t.b.f
5.35
hFE
6.5
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Switching times (32 kHz line
deflection dynamic test circuit).
Turn-off storage time
Turn-off fall time
ICsat = 16 A;IB1 = 3.2 A; (IB2 = -8A)
ts
tf
t.b.f
t.b.f
t.b.f
t.b.f
µs
µs
Switching times (110 kHz line
deflection dynamic test circuit).
Turn-off storage time
ICsat = 8 A;IB1 = 1.6 A; (IB2 = -4.8A)
ts
tf
t.b.f
t.b.f
t.b.f
t.b.f
µs
µs
Turn-off fall time
1 Measured with half sine-wave voltage (curve tracer).
January 1998
2
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4540AL
MECHANICAL DATA
Dimensions in mm
Net Mass: 9 g
5.0
3.0
19.9
3.5
3.7
6.2
8.5
4.1
26.0
1.9
seating
plane
2.4
2.4
3.0
1.3
20.5 - 20.7
0.8
2.7
5.46 5.46
Fig.1. SOT430; pin 2 connected to mounting base.
January 1998
3
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4540AL
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1998
4
Rev 1.000
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