BUJD105AD [NXP]
NPN power transistor with integrated diode; 集成二极管NPN功率晶体管
| 型号： | BUJD105AD |
| 厂家： | 
NXP |
| 描述： | NPN power transistor with integrated diode |
| 文件： | 总12页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUJD105AD
NPN power transistor with integrated diode
Rev. 01 — 8 May 2009
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic
package.
1.2 Features and benefits
Fast switching
Very low switching and conduction
losses
High voltage capability
1.3 Applications
DC-to-DC converters
Inverters
Electronic lighting ballasts
Motor control systems
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max Unit
IC
collector current
-
-
-
-
8
A
Ptot
total power
dissipation
Tmb ≤ 25 °C; see Figure 3
80
W
VCESM
collector-emitter
peak voltage
VBE = 0 V
-
-
700
-
V
Static characteristics
hFE DC current gain
VCE = 5 V; IC = 4 A;
Tmb = 25 °C; see Figure 6;
see Figure 7
8
13.5
BUJD105AD
NXP Semiconductors
NPN power transistor with integrated diode
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
B
C
E
C
base
mb
C
2
collector
emitter
[1]
3
B
mb
mounting base; connected to
collector
E
2
sym131
1
3
SOT428
(SC-63; DPAK)
[1] It is not possible to make a connection to pin 2 of the SOT428 (DPAK) package.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
SOT428
BUJD105AD
SC-63;
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads (one
lead cropped)
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCESM
collector-emitter peak
voltage
VBE = 0 V
-
700
V
VCBO
VCEO
collector-base voltage IE = 0 A
-
-
700
400
V
V
collector-emitter
voltage
IB = 0 A
IC
collector current
peak collector current
base current
-
8
A
ICM
IB
see Figure 1; see Figure 2
-
16
4
A
-
A
IBM
Ptot
Tstg
Tj
peak base current
-
8
A
total power dissipation Tmb ≤ 25 °C; see Figure 3
storage temperature
-
80
150
150
W
°C
°C
-65
-
junction temperature
BUJD105AD_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 8 May 2009
2 of 12
BUJD105AD
NXP Semiconductors
NPN power transistor with integrated diode
001aac049
V
C
CC
10
I
C
L
(A)
V
CL(CE)
probe point
8
6
4
2
0
L
B
I
Bon
DUT
V
BB
001aab999
V
BB
= −5 V
−3 V
−1 V
Fig 1. Test circuit for reverse bias safe operating area
0
200
400
600
800
(V)
V
CEclamp
Fig 2. Reverse bias safe operating area
001aab993
120
P
der
(%)
80
40
0
0
40
80
120
160
T
mb
(°C)
Fig 3. Normalized total power dissipation as a function of mounting base temperature
BUJD105AD_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 8 May 2009
3 of 12
BUJD105AD
NXP Semiconductors
NPN power transistor with integrated diode
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from see Figure 4
junction to mounting
base
-
-
1.56
K/W
Rth(j-a)
thermal resistance from printed-circuit-board mounted; minimum
-
75
-
K/W
junction to ambient
footprint; see Figure 5
001aab998
10
Z
th(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
t
p
0.05
0.02
P
δ =
tot
T
−1
10
10
0.01
t
t
p
T
−2
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
t
p
(s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse width
7.0
7.0
1.5
2.15
2.5
4.57
001aab021
Fig 5. Minimum footprint SOT428
BUJD105AD_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 8 May 2009
4 of 12
BUJD105AD
NXP Semiconductors
NPN power transistor with integrated diode
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
hFE
DC current gain
VCE = 5 V; IC = 4 A; Tmb = 25 °C;
see Figure 6; see Figure 7
8
13.5
-
VCE = 5 V; IC = 1 mA; Tmb = 25 °C
VCE = 5 V; IC = 500 mA; Tmb = 25 °C
IE = 0 A; VCB = 700 V
10
13
-
17
23
-
34
36
0.2
ICBO
ICEO
ICES
collector-base cut-off
current
[1]
[1]
mA
mA
collector-emitter cut-off IB = 0 A; VCE = 400 V
current
-
-
0.1
collector-emitter cut-off VCE = 700 V; VBE = 0 V; Tj = 25 °C
[1]
[1]
-
-
-
-
-
-
0.2
0.5
10
mA
mA
mA
current
VCE = 700 V; VBE = 0 V; Tj = 125 °C
IEBO
emitter-base cut-off
current
IC = 0 A; VEB = 9 V
VBEsat
VCEOsus
VCEsat
VF
base-emitter saturation IC = 4 A; IB = 0.8 A; see Figure 8
voltage
-
1
1.5
-
V
V
V
V
collector-emitter
sustaining voltage
IB = 0 A; LC = 25 mH; IC = 10 mA;
see Figure 9; see Figure 10
400
-
collector-emitter
saturation voltage
IB = 0.8 A; IC = 4 A; see Figure 11;
see Figure 12
-
-
0.3
1.07
1
forward voltage
IF = 4 A
1.5
Dynamic characteristics
tf
fall time
IC = 5 A; IBon = 1 A; VBB = -5 V; LB = 1 µH;
inductive load; Tmb = 25 °C; see Figure 13;
see Figure 14
-
20
50
ns
IC = 5 A; IBon = 1 A; VBB = -5 V; LB = 1 µH;
inductive load; Tmb = 100 °C
-
-
25
100
0.5
ns
µs
IC = 5 A; IBon = 1 A; IBoff = -1 A; RL = 75 Ω;
resistive load; Tj = 25 °C; see Figure 15;
see Figure 16
0.3
ton
ts
turn-on time
storage time
IC = 5 A; IBon = 1 A; IBoff = -1 A; RL = 75 Ω;
Tj = 25 °C; resistive load
-
-
-
-
0.65
1.8
1.2
1.4
1
µs
µs
µs
µs
IC = 5 A; IBon = 1 A; IBoff = -1 A; RL = 75 Ω;
resistive load; Tj = 25 °C
2.5
1.7
1.9
IC = 5 A; IBon = 1 A; RL = 75 Ω; inductive
load; Tj = 25 °C; LB = 1 µH; VBB = -5 V
IC = 5 A; IBon = 1 A; IBoff = -1 A; inductive
load; Tj = 100 °C; LB = 1 µH; VBB = -5 V
[1] Measured with half sine-wave voltage (curve tracer).
BUJD105AD_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 8 May 2009
5 of 12
BUJD105AD
NXP Semiconductors
NPN power transistor with integrated diode
001aac045
001aac046
2
2
10
10
T = 100 °C
T = 100 °C
j
j
h
FE
h
FE
25 °C
25 °C
−40 °C
−40 °C
10
10
1
10
1
10
−2
−1
−2
−1
10
10
1
10
1
10
I
C
(A)
I (A)
C
Fig 6. DC current gain as a function of collector
current; typical values
Fig 7. DC current gain as a function of collector
current; typical values
001aac047
50 V
1.3
100 Ω to 200 Ω
V
BEsat
(V)
horizontal
oscilloscope
vertical
1.1
0.9
0.7
0.5
6 V
T = −40 °C
j
300 Ω
1 Ω
25 °C
30 Hz to 60 Hz
001aab987
100 °C
Fig 9. Test circuit for collector-emitter sustaining
voltage
−1
10
1
10
I
C
(A)
Fig 8. Base-emitter saturation voltage as a function of
collector current; typical values
BUJD105AD_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 8 May 2009
6 of 12
BUJD105AD
NXP Semiconductors
NPN power transistor with integrated diode
001aab995
I
C
2.0
(mA)
V
CEsat
(V)
I
= 1 A
2 A 3 A
4 A
C
1.6
1.2
0.8
0.4
0
250
100
10
0
min
V
(V)
CE
V
CEOsus
001aab988
−2
−1
10
10
1
10
Fig 10. Oscilloscope display for collector-emitter
sustaining voltage test waveform
I
B
(A)
Fig 11. Collector-emitter saturation voltage as a
function of base current; typical values
001aac048
V
CC
0.6
V
CEsat
(V)
L
C
L
B
I
V
0.4
0.2
0
Bon
DUT
BB
001aab991
T = 100 °C
j
25 °C
−40 °C
Fig 13. Test circuit for inductive load switching
−1
10
1
10
I
C
(A)
Fig 12. Collector-emitter saturation voltage as a
function of collector current; typical values
BUJD105AD_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 8 May 2009
7 of 12
BUJD105AD
NXP Semiconductors
NPN power transistor with integrated diode
I
C
V
CC
I
Con
90 %
R
L
V
t
IM
0
R
B
DUT
p
T
001aab989
10 %
t
t
f
t
s
t
off
I
B
Fig 15. Test circuit for resistive load switching
I
Bon
t
−I
Boff
001aab992
Fig 14. Switching times waveforms for inductive load
I
C
I
Con
90 %
90 %
10 %
t
t
f
t
s
I
B
t
on
t
off
I
Bon
10 %
t
t ≤ 30 ns
r
−I
Boff
001aab990
Fig 16. Switching times waveforms for resistive load
BUJD105AD_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 8 May 2009
8 of 12
BUJD105AD
NXP Semiconductors
NPN power transistor with integrated diode
7. Package outline
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
SOT428
y
E
A
A
A
1
b
2
E
1
mounting
base
D
2
D
1
H
D
2
L
L
2
L
1
1
3
b
1
b
M
c
w
A
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
y
max
D
min
E
min
L
1
min
2
1
UNIT
A
A
1
b
b
b
c
D
E
e
e
1
H
D
L
L
2
w
1
2
1
2.38
2.22
0.93
0.46
0.89
0.71
1.1
0.9
5.46
5.00
0.56
0.20
6.22
5.98
6.73
6.47
10.4
9.6
2.95
2.55
0.9
0.5
4.0
4.45
0.5
mm
2.285 4.57
0.2
0.2
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
06-02-14
06-03-16
SOT428
SC-63
TO-252
Fig 17. Package outline SOT428 (DPAK)
BUJD105AD_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 8 May 2009
9 of 12
BUJD105AD
NXP Semiconductors
NPN power transistor with integrated diode
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUJD105AD_1
20090508
Product data sheet
-
-
BUJD105AD_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 8 May 2009
10 of 12
BUJD105AD
NXP Semiconductors
NPN power transistor with integrated diode
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Applications — Applications that are described herein for any of these
9.2 Definitions
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BUJD105AD_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 8 May 2009
11 of 12
BUJD105AD
NXP Semiconductors
NPN power transistor with integrated diode
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 May 2009
Document identifier: BUJD105AD_1
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