BUK212-50Y [NXP]
Single channel high-side TOPFET⑩; 单路高侧TOPFET ™
| 型号： | BUK212-50Y |
| 厂家： | 
NXP |
| 描述： | Single channel high-side TOPFET⑩ |
| 文件： | 总16页 (文件大小：380K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET™
Rev. 01 — 17 March 2003
Product data
1. Product profile
1.1 Description
Monolithic temperature and overload protected single high-side power switch based
on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic
package.
Product availability:
BUK212-50Y in SOT263B-01
BUK217-50Y in SOT426 (D2-PAK).
1.2 Features
■ Very low quiescent current
■ Power TrenchMOS™
■ CMOS logic capability
■ Negative load clamping
■ Overload protection
■ ESD protection for all pins
■ Diagnostic status indication
■ Operating voltage down to 5.5 V
■ Current limitation.
■ Overtemperature protection
■ Over and undervoltage protection
■ Reverse battery protection
■ Low charge pump noise
■ Loss of ground protection
1.3 Applications
■ 12 V and 24 V grounded loads
■ Inductive loads
■ High inrush current loads
■ Replacement for relays and fuses.
1.4 Quick reference data
Table 1:
Symbol
RBLon
IL
Quick reference data
Parameter
Min
-
Max
14
44
-
Unit
mΩ
A
battery-load on-state resistance
load current
-
IL(nom)
IL(lim)
nominal load current (ISO)
self-limiting load current
battery-ground operating voltage
25
47
5.5
A
100
35
A
VBG(oper)
V
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
2. Pinning information
mb
mb
B
S
I
1
2
3
4
5
P
L
G
03pa56
1
5
MBL264
MBL431
Fig 1. Pinning; SOT426 (D2-PAK).
Fig 2. Pinning; SOT263B-01.
Pin description
Fig 3. Symbol; (HSS) TOPFETTM
.
2.1 Pin description
Table 2:
Symbol
Pin
1
I/O
-
Description
circuit common ground
input
G
I
2
I
[1] [2]
B
S
L
-
3
-
battery
4
O
O
-
status
5
load
[2]
mb
mounting base
[1] It is not possible to make a connection to pin 3 of the SOT426 package.
[2] The battery is connected to the mounting base.
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
2 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
3. Block diagram
battery
3/mb
status
4
VOLTAGE REGULATOR
CHARGE PUMP
POWER
MOSFET
SHORT CIRCUIT
PROTECTION
CURRENT LIMIT
OVERVOLTAGE
PROTECTION
input
CONTROL
LOGIC
UNDERVOLTAGE
PROTECTION
2
load
LOW CURRENT
DETECT
5
TEMPERATURE
SENSOR
03pa33
R
G
ground
1
Fig 4. Elements of the high-side TOPFET switch.
4. Functional description
Table 3:
Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present;
UV = undervoltage; OV = overvoltage; LC = low current or open circuit load; SC = short circuit; OT = overtemperature [1]
Truth table
.
Input
Supply
UV
Load
Load
output
OFF
ON
Status Operating mode
OV
X
0
LC
X
0
SC
X
0
OT
X
0
L
X
0
0
1
0
0
0
H
H
L
off
H
H
H
H
H
H
on & normal
0
1
0
0
ON
on & low current detect
supply undervoltage lockout
supply overvoltage shutdown
SC tripped
0
X
X
0
X
0
X
0
OFF
OFF
OFF
OFF
H
H
L
1
0
1
X
1
0
0
0
L
OT shutdown
[1] The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold.
See “Overtemperature protection” characteristics in Table 6.
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
3 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
5. Limiting values
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions
Limiting values
Min
Max
50
Unit
V
VBG
IL
battery-ground supply voltage
-
load current
T
mb ≤ 90 °C
mb ≤ 25 °C
-
44
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
mounting base temperature
T
-
115
W
−55
+175 °C
+150 °C
-
-
Tmb
during soldering (≤ 10 s)
260
°C
Reverse battery voltage
[1]
VBGR
reverse battery-ground supply
voltage
-
-
16
32
V
V
VBGRR
repetitive reverse battery-ground
supply voltage
External resistor
[2]
[3]
RI
input resistor
status resistor
3.3
3.3
-
-
kΩ
kΩ
RS
Input current
II
input current
repetitive peak input current
−5
+5
mA
mA
IIRM
δ ≤ 0.1; tp = 300 µs
−50
+50
Status current
IS
status current
repetitive peak status current
−5
+5
mA
mA
ISRM
δ ≤ 0.1; tp = 300 µs
−50
+50
Inductive load clamping
EBL(CL)S non-repetitive battery-load
clamping energy
Tj = 150 °C prior to turn-off; IL = 20 A
-
-
460
2
mJ
kV
Electrostatic discharge
Vesd
electrostatic discharge voltage
Human body model; C = 100 pF;
R = 1.5 kΩ
[1] Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load
must limit the reverse current. The internal ground resistor limits the reverse battery ground current.
[2] To limit input current during reverse battery and transient overvoltages.
[3] To limit status current during reverse battery and transient overvoltages.
6. Thermal characteristics
Table 5:
Symbol Parameter
Rth(j-mb) thermal resistance from junction to
mounting base
thermal resistance from junction to mounted on printed circuit board;
Thermal characteristics
Conditions
Min
Typ
Max
Unit
-
0.86
1.08
K/W
Rth(j-a)
-
50
-
K/W
ambient
minimum footprint; SOT426
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Product data
Rev. 01 — 17 March 2003
4 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
7. Static characteristics
Table 6:
Static characteristics
Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Clamping voltage
VBG(CL)
VBL(CL)
VLG(CL)
battery-ground clamping voltage
IG = 1 mA; Figure 6
IL = IG = 1 mA
50
55
65
V
V
V
V
battery-load clamping voltage
load-ground clamping voltage
50
55
65
IL = 10 mA; Figure 12 and 14
IL = 20 A; tp = 300 µs
−18
−20
−23
−25
−28
−30
[1]
[2]
Supply voltage
VBG(oper)
Current
IB
battery-ground operating voltage
5.5
-
35
V
battery quiescent current
off-state load current
VLG = 0 V; Figure 10
Tmb = 150 °C
Tmb = 25 °C
-
-
-
20
2
µA
µA
0.1
IL(off)
VBL = VBG
Tmb = 150 °C
Tmb = 25 °C
-
-
20
1
µA
µA
mA
A
-
0.1
2
IG(on)
operating current
Figure 6
-
4
[3]
IL(nom)
nominal load current (ISO)
VBL = 0.5 V; Tmb = 85 °C
25
-
-
Resistance [4]
RBLon
battery-load on-state resistance
9 V ≤ VBG ≤ 35 V; IL = 20 A; Figure 5
Tmb = 25 °C
-
-
10
-
14
25
mΩ
mΩ
Tmb = 150 °C
VBG = 6 V; IL = 20 A
Tmb = 25 °C
-
13
-
18
mΩ
mΩ
Ω
Tmb = 150 °C
-
33
[5]
RG
ground resistance
IG = 10 mA
95
150
190
Input [6]
II
input current
VIG = 5 V
II = 200 µA
Figure 9
20
5.5
-
90
7
160
µA
V
VIG(CL)
VIG(on)
VIG(off)
input-ground clamping voltage
input-ground turn-on voltage
input-ground turn-off voltage
8.5
2.4
2.1
0.3
-
3
V
1.5
-
-
V
VIG(on)(hys) input-ground turn-on hysteresis
-
V
II(on)
input turn-on current
VIG = 3 V
-
100
-
µA
µA
II(off)
input turn-off current
VIG = 1.5 V
10
-
Low current detection [7][10]
IL(LC)
load low current detect
−40 °C ≤ Tmb ≤ +150 °C
Tmb = 25 °C; Figure 15
0.55
0.65
-
-
4.4
2.9
-
A
A
A
1.8
0.44
IL(LC)(hys)
load low current detect hysteresis
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
5 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
Table 6:
Static characteristics…continued
Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Undervoltage [10]
[8]
[9]
VBG(uv)
battery-ground undervoltage
2
-
4.2
0.5
5.5
-
V
V
VBG(uv)(hys) battery-ground undervoltage
hysteresis
Overvoltage [10]
VBG(ov)
battery-ground overvoltage
35
-
45
1
50
-
V
V
VBG(ov)(hys) battery-ground overvoltage
hysteresis
Overload protection [10]
[11]
IL(lim)
self-limiting load current
VBG ≥ 9 V; VBL = VBG; Figure 8
47
74
100
A
[10][11]
[12]
Short circuit load protection
VBL(off)
battery-load turn-off voltage
VBG = 16 V; Figure 11
VBG = 35 V
8
10
20
12
25
V
V
15
Overtemperature protection [10][11]
[13]
Tj(th)
threshold junction temperature
150
-
170
10
190
-
°C
°C
Tj(th)(hys)
threshold junction temperature
hysteresis
Status [6][10]
VSG(CL)
status-ground clamping voltage
status-ground low voltage
IS = 100 µA
5.5
7
8.5
V
VSG(L)
IS = 100 µA; Figure 7
Tmb = −40 °C
-
-
-
1
V
V
Tmb = 25 °C
0.7
0.8
IS(off)
status leakage current
status resistor
VSG = 5 V
Tmb = 150 °C
-
-
-
-
15
1
µA
µA
kΩ
Tmb = 25 °C
0.1
47
[14]
RS
connected externally; VSG = 5 V
-
[1] For a high-side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
[2] This is the current drawn from the supply when the input is LOW, and includes leakage current to the load.
[3] Defined as in ISO 10483-1. For comparison purposes only.
[4] The supply and input voltages for the RBLon tests are continuous. The specified pulse duration is tp = 300 µs, and refers only to the
applied load current.
[5] RG is a resistor incorporated internally in the package.
[6] 9 V ≤ VBG ≤ 16 V
[7] 9 V ≤ VBG ≤ 35 V. A low current load can be detected in the on-state.
[8] Undervoltage sensor causes the device to switch off and reset.
[9] Overvoltage sensor causes the device to switch off to protect the load.
[10] See Table 3 “Truth table”
[11] 5.5 V ≤ VBG ≤ 35 V
[12] The battery-to-load threshold voltage for short circuit is approximately proportional to the battery supply voltage.
[13] After cooling below the reset temperature the switch will resume normal operation.
[14] The status output is an open drain transistor and requires an external pull-up circuit to indicate a logic HIGH.
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
6 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
03pa65
25
R
BLon
(m
T = 150 °C
)
Ω
j
20
15
10
5
T = 25 °C
j
T = -40 °C
j
0
0
8
16
24
32
40
V
(V)
BG
IL = 20 A; VIG = 5 V
Fig 5. Battery-load on-state resistance as a function of battery-ground supply voltage; typical values.
03pa55
4
I
G
(mA)
clamping
3
2
overvoltage
shutdown
undervoltage
shutdown
T = −40 °C
j
T = 25 °C
j
T = 150 °C
j
1
0
75
0
25
50
V
(V)
BG
VIG = 5 V
Fig 6. Supply current characteristics: operating current as a function of battery-ground supply voltage; typical
values.
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
7 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
03pa63
03pa38
4
80
I
L
I
S
(A)
(mA)
60
3
V
BL(off)
2
1
0
40
20
0
4
3
2
0
1
0
4
8
12
V
(V)
V
(V)
BL
SG
VBG = 13 V; VIG = 5 V; Tj = 25 °C
VBG = 16 V; VIG = 5 V; Tmb = 25 °C (the device trips after
200 µs (typical), and status goes LOW).
Fig 7. Status current as a function of status-ground
voltage; typical values.
Fig 8. Load current limiting as a function of
battery-load voltage; typical values.
03pa64
03pa36
3.5
8
V
I
IG
B
(V)
(
µ
A)
max
3
2.5
2
6
4
2
0
V
IG (on)
V
IG (off)
1.5
1
min
200
T (°C)
150
-50
0
100
50
-50
0
50
100
150
200
T ( C)
j
°
j
9 V ≤ VBG ≤ 16 V
VBG = 16 V
Fig 9. Input-ground voltage as a function of junction
temperature.
Fig 10. Battery quiescent current as a function of
junction temperature; typical values.
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
8 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
03pa40
max
30
V
BL(off)
(V)
typ
20
10
0
min
10
50
(V)
0
20
30
40
V
BG
VIG = 5 V; −40 °C ≤ Tmb ≤ +150 °C
Fig 11. Battery-load turn-off voltage as a function of battery-ground voltage.
8. Dynamic characteristics
Table 7:
Tmb = 25 °C; VBG = 13 V; resistive load RL = 13 Ω. Figure 13
Symbol Parameter Conditions
Turn-on measured from the input going HIGH
Switching characteristics
Min
Typ
Max
Unit
td(on)
dV/dton
ton
turn-on delay time
rising slew rate
to 10% VL
-
-
-
40
90
µs
30 to 70% VL
to 90% VL
0.5
180
1.0
310
V/µs
µs
turn-on switching time
Turn-off measured from the input going LOW
td(off)
dV/dtoff
toff
turn-off delay time
falling slew rate
to 90% VL
-
-
-
75
120
1.0
µs
70 to 30% VL
to 10% VL
0.5
105
V/µs
µs
turn-off switching time
160
Table 8:
Status response times
Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Measured from when the input goes HIGH
td(sc)
td(lc)
short circuit response time
VBL > VBL(off); Figure 16
IL < IL(LC); Figure 15
-
-
180
200
250
-
µs
µs
low current detect response time
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
9 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
Table 9:
Capacitances
Tmb = 25 °C; f = 1 MHz; VIG = 0 V.
Symbol Parameter
Conditions
VBG = 13 V
VBL = 13 V
VSG = 5 V
Min
Typ
15
Max
20
Unit
pF
Cig
Cbl
Csg
input-ground capacitance
battery-load output capacitance
status-ground capacitance
-
-
-
635
11
900
15
pF
pF
t
t
on
off
90%
V
L
dV/dt
off
dV/dt
on
10%
0 V
5 V
R
S
R
I
V
SG
IG
V
BG
P
0 V
5 V
V
L
V
SG
L
L
V
IG
V
R
L
0
03pa51
03pa45
VBG = 13 V; VIG = 5 V and Tmb = 25 °C
Fig 12. Schematic drawing of the switching circuit.
Fig 13. Resistive switching waveforms and definitions.
V
0 V
L
t
t
on
off
E
BL(CL)S
I
90%
L(LC)
V
I
L
L
10%
0 V
5 V
0 A
5 V
t
d(lc)
V
V
V
SG
IG
SG
IG
0.7 V
0 V
0.7 V
0 V
5 V
5 V
V
0
0
03pa48
03pa50
Fig 14. Switching a large inductive load.
Fig 15. Low current detection waveforms.
9397 750 10768
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Product data
Rev. 01 — 17 March 2003
10 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
t
d(sc)
I
L
0 A
5 V
V
V
SG
IG
0.7 V
0 V
5 V
0
03pa49
VBL ≥ VBL(off)
Fig 16. Short circuit protection waveforms.
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
11 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
9. Package outline
2
Plastic single-ended surface mounted package (Philips version of D -PAK); 5 leads
(one lead cropped)
SOT426
A
A
E
1
D
1
mounting
base
D
H
D
3
L
p
1
2
4
5
b
c
e
e
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
A
A
L
H
Q
UNIT
b
c
D
E
e
1
p
D
1
max.
1.40
1.27
4.50
4.10
0.85
0.60
0.64
0.46
2.90 15.80 2.60
2.10 14.80 2.20
1.60
1.20
10.30
9.70
mm
11
1.70
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-12-14
99-06-25
SOT426
Epoxy meets UL94 V0 at 1/8’’. Net mass: 1.5g. For soldering guidelines and surface mount footprint design, please refer to
Data Handbook SC18.
Fig 17. SOT426 (D2-PAK).
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
12 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
Plastic single-ended package; heatsink mounted; 1 mounting hole;
5-lead TO-220 lead form option
SOT263B-01
E
p
1
A
A
p
1
q
D
1
mounting
D
base
L
3
R
L
1
L
L
4
m
L
2
R
Q
1
5
e
b
w
M
c
Q
1
Q
2
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(2)
L
4
(1)
b
D
A
A
c
D
E
UNIT
mm
e
L
L
L
m
p
p
q
Q
Q
Q
2
R
w
L
1
1
1
2
3
1
1
max.
4.5 1.39 0.85 0.7 15.8 6.4 10.3
4.1 1.27 0.70 0.4 15.2 5.9 9.7
9.8 5.9 5.2 2.4
9.7 5.3 5.0 1.6
0.8 3.8 4.3 3.0
0.6 3.6 4.1 2.7
1.7
0.5
2.0 4.5 8.2 0.5 0.4
Notes
1. Terminal dimensions are uncontrolled in this zone.
2. Positional accuracy of the terminals is controlled in this zone.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
5-lead (option)
TO-220
01-01-11
SOT263B-01
Refer to mounting instructions for TO-220 packages. Epoxy meets UL94 VO at 1/8’’. Net mass: 2g
Fig 18. SOT263B-01.
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
13 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
10. Revision history
Table 10: Revision history
Rev Date
CPCN
-
Description
Product data (9397 750 10768).
01 20030317
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
14 of 16
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
11. Data sheet status
Level Data sheet status[1]
Product status[2][3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Trademarks
TOPFET — is a trademark of Koninklijke Philips Electronics N.V.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
15 of 16
9397 750 10768
Product data
Rev. 01 — 17 March 2003
BUK212-50Y; BUK217-50Y
Philips Semiconductors
Single channel high-side TOPFET™
Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
2.1
3
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4
5
6
7
8
9
10
11
12
13
14
© Koninklijke Philips Electronics N.V. 2003.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 17 March 2003
Document order number: 9397 750 10768
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