BUK446-800B [NXP]
PowerMOS transistor; 功率MOS晶体管
| 型号： | BUK446-800B |
| 厂家： | 
NXP |
| 描述： | PowerMOS transistor |
| 文件： | 总7页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BUK446
-800A
800
2.0
30
-800B
800
1.7
30
VDS
ID
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
V
A
W
Ω
Ptot
RDS(ON)
3
4
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
d
case
gate
2
drain
g
3
source
case isolated
1
2 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
VDGR
±VGS
Drain-source voltage
-
-
-
-
800
800
30
V
V
V
Drain-gate voltage
RGS = 20 kΩ
Gate-source voltage
-
-800A
2.0
1.3
8
-800B
ID
Drain current (DC)
Ths = 25 ˚C
Ths = 100 ˚C
Ths = 25 ˚C
-
-
-
1.7
1.1
6.8
A
A
A
ID
Drain current (DC)
IDM
Drain current (pulse peak value)
Ptot
Tstg
Tj
Total power dissipation
Storage temperature
Junction Temperature
Ths = 25 ˚C
-
-
-
- 55
-
30
150
150
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Rth j-a
Thermal resistance junction to with heatsink compound
-
-
-
4.16
-
K/W
K/W
heatsink
Thermal resistance junction to
ambient
55
May 1995
1
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V; ID = 0.25 mA
800
-
-
V
VGS(TO)
Gate threshold voltage
VDS = VGS; ID = 1 mA
2.1
3.0
2
0.1
10
2.7
3.5
4.0
20
1.0
100
3.0
4.0
V
µA
mA
nA
Ω
IDSS
Zero gate voltage drain current VDS = 800 V; VGS = 0 V; Tj = 25 ˚C
Zero gate voltage drain current VDS = 800 V; VGS = 0 V; Tj =125 ˚C
Gate source leakage current
Drain-source on-state
resistance
-
-
-
-
-
IDSS
IGSS
VGS = ±30 V; VDS = 0 V
RDS(ON)
VGS = 10 V;
ID = 1.5 A
BUK446-800A
BUK446-800B
Ω
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
gfs
Forward transconductance
VDS = 25 V; ID = 1.5 A
3.0
4.3
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
-
-
1000 1250
pF
pF
pF
80
30
120
50
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 2.3 A;
VGS = 10 V; RGS = 50 Ω;
Rgen = 50 Ω
-
-
-
-
10
50
130
40
25
70
150
60
ns
ns
ns
ns
Ld
Internal drain inductance
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
4.5
-
nH
Ls
Internal source inductance
-
7.5
-
nH
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree
three terminals to external
heatsink
-
1500
V
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
-
12
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IDR
Continuous reverse drain
-
-
-
2.0
A
current
IDRM
VSD
Pulsed reverse drain current
Diode forward voltage
-
-
-
-
8
1.3
A
V
IF = 2.0 A ; VGS = 0 V
1.0
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 2.0 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 100 V
-
-
1800
12
-
-
ns
µC
May 1995
2
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
Normalised Power Derating
with heatsink compound
Zth / (K/W)
PD%
120
10
1
110
100
90
80
70
60
50
40
30
20
10
0
D =
0.5
0.2
0.1
0.05
0.1
0.02
t
T
p
tp
P
0.01
D =
D
0
t
T
0.001
0
20
40
60
80
Ths /
100
120
140
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
C
Fig.1. Normalised power dissipation.
PD% = 100 PD/PD 25 ˚C = f(Ths)
Fig.4. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
Normalised Current Derating
ID%
ID / A
8
6
4
2
0
120
with heatsink compound
110
100
90
80
70
60
50
40
30
20
10
0
VGS / V =
10
6
5
4.8
4.6
4.4
4.2
4
0
20
40
60
80
Ths /
100
120
140
0
4
8
12
16
20
24
28
C
VDS / V
Fig.2. Normalised continuous drain current.
ID% = 100 ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
ID / A
RDS(ON) / Ohm
100
10
10
8
4.4
4
4.6
4.2
A
B
VGS / V =
tp = 10 us
100 us
4.8
RDS(ON) = VDS/ID
6
1
1 ms
5
4
10 ms
100 ms
10
DC
0.1
0.01
2
0
100
0
2
4
6
10
1000
ID / A
VDS / V
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
May 1995
3
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
VGS(TO) / V
ID / A
8
max.
4
3
2
1
0
Tj / C =
25
6
4
2
0
typ.
150
min.
-60 -40 -20
0
20
40
60
80 100 120 140
0
2
4
6
8
10
Tj /
C
VGS / V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
SUB-THRESHOLD CONDUCTION
ID / A
gfs / S
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
7
6
5
4
3
2
1
0
2 %
typ
98 %
0
1
2
3
4
0
2
4
6
8
VGS / V
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Normalised RDS(ON) = f(Tj)
a
C / pF
10000
1000
100
2
1
0
Ciss
Coss
Crss
10
-60 -40 -20
0
20 40 60 80 100 120 140
0
20
40
Tj /
C
VDS / V
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 1.5 A; VGS = 10 V
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
May 1995
4
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
IF / A
VDS / V =160
VGS / V
12
10
10
8
Tj / C = 150
25
640
6
5
4
2
0
0
0
20
40
0
1
2
QG / nC
VSDS / V
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 4 A; parameter VDS
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
May 1995
5
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.2
max
5.7
max
3.2
3.0
4.4
max
0.9
0.5
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
1
2
3
0.9
0.7
M
0.4
0.55 max
1.3
2.54
5.08
top view
Fig.15. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
May 1995
6
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
May 1995
7
Rev 1.200
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