BUK474-60H [NXP]
PowerMOS transistor; 功率MOS晶体管
| 型号： | BUK474-60H |
| 厂家： | 
NXP |
| 描述： | PowerMOS transistor |
| 文件： | 总8页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-60H
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope.
The device is intended for use in
Automotive applications, Switched
Mode Power Supplies (SMPS),
motor control, welding, DC/DC and
AC/DC converters, and in general
purpose switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
VDS
ID
Ptot
Tj
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
60
21
30
150
38
V
A
W
˚C
mΩ
RDS(ON)
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
d
case
gate
2
drain
g
3
source
case isolated
s
1
2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
VDGR
±VGS
ID
Drain-source voltage
-
-
-
-
-
60
60
30
21
13
V
V
V
A
A
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
RGS = 20 kΩ
-
Ths = 25 ˚C
Ths = 100 ˚C
ID
-
IDM
Ptot
Tstg
Tj
Drain current (pulse peak value) Ths = 25 ˚C
-
84
30
150
150
A
Total power dissipation
Storage temperature
Junction temperature
Ths = 25 ˚C
-
-
-
- 55
-
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Rth j-hs
Rth j-a
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
with heatsink compound
-
4.17
K/W
55
-
K/W
February 1996
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-60H
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V; ID = 0.25 mA
60
-
-
V
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Gate threshold voltage
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 25 ˚C
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj =125 ˚C
Gate source leakage current
Drain-source on-state
resistance
VDS = VGS; ID = 1 mA
2.1
3.0
1
0.1
10
30
4.0
10
1.0
100
38
V
-
-
-
-
µA
mA
nA
mΩ
VGS = ±30 V; VDS = 0 V
VGS = 10 V; ID = 20 A
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
gfs
Forward transconductance
VDS = 25 V; ID = 20 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
7
14
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
900
420
160
1600
600
275
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 3 A;
VGS = 10 V; RGS = 50 Ω;
Rgen = 50 Ω
-
-
-
-
15
55
75
60
30
90
125
ns
ns
ns
ns
100
Ld
Ls
Internal drain inductance
Internal source inductance
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
-
4.5
7.5
-
-
nH
nH
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
heatsink
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IDR
Continuous reverse drain
current
-
-
-
21
A
IDRM
VSD
Pulsed reverse drain current
Diode forward voltage
-
-
-
-
84
1.8
A
V
IF = 21 A ; VGS = 0 V
0.9
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 21 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 30 V
-
-
60
0.25
-
-
ns
µC
February 1996
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-60H
AVALANCHE LIMITING VALUE
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 41 A ; VDD ≤ 25 V ;
VGS = 10 V ; RGS = 50 Ω
-
-
100
mJ
Normalised Power Derating
with heatsink compound
ID / A
PD%
1000
100
10
120
110
100
90
80
70
60
50
40
30
20
10
0
tp =
10 us
100 us
1 ms
RDS(ON) = VDS/ID
10 ms
100 ms
DC
1
0.1
0
20
40
60
80
Ths /
100
120
140
0.1
1
10
VDS / V
100
1000
C
Fig.1. Normalised power dissipation.
PD% = 100 PD/PD 25 ˚C = f(Ths)
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Normalised Current Derating
ID%
Zth(j-hs) K/W
10
1
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
D =
0.5
0.2
0.1
0.05
0.1
0.02
t
T
p
tp
P
0.01
D =
D
0
t
T
0.001
0
20
40
60
80
Ths /
100
120
140
1E-07
1E-05
1E-03
tp / sec
1E-01
1E+01
C
Fig.2. Normalised continuous drain current.
ID% = 100 ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V
Fig.4. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
February 1996
3
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-60H
gfs / S
ID / A
80
VGS / V = 9
20
15
10
5
20
15
10
70
60
50
40
30
20
10
0
8
7
6
5
Tj / C =
-40
25
150
0
0
10
20
30
40
ID / A
50
60
70
80
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 15 V
a
RDS(ON) / Ohm
Normalised RDS(ON) = f(Tj)
0.2
5
6
7
8
VGS / V =
9
1.5
1.0
0.5
0
0.15
0.1
0.05
0
10
20
-60 -40 -20
0
20 40 60 80 100 120 140
Tj /
0
10
20
30
40
ID / A
50
60
70
80
C
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 20 A; VGS = 10 V
VGS(TO) / V
ID / A
80
70
60
50
40
30
20
10
0
Tj / C =
max.
4
-40
25
150
typ.
3
min.
2
1
0
-60 -40 -20
0
20
40
60
80 100 120 140
0
2
4
6
8
10
12
VGS / V
Tj /
C
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 15 V; parameter Tj
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
February 1996
4
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-60H
SUB-THRESHOLD CONDUCTION
ID / A
IF / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
80
70
60
50
40
30
20
10
0
Tj / C =
-40
25
150
2 %
typ
98 %
0
1
2
3
4
0
0.5
1
1.5
2
VGS / V
VSDS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
C / pF
WDSS%
120
10000
110
100
90
80
70
60
50
40
30
20
10
0
Ciss
1000
Coss
Crss
100
0.01
20
40
60
80
Ths /
100
C
120
140
0.1
1
10
100
VDS / V
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Ths); conditions: ID = 41 A
VGS / V
12
10
8
VDD
+
VDS / V = 12
L
48
VDS
-
VGS
6
-ID/100
T.U.T.
0
4
R 01
2
RGS
shunt
0
0
10
20
30
40
QG / nC
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 LID2 BVDSS/(BVDSS − VDD
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 41 A; parameter VDS
)
February 1996
5
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-60H
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
6.4
2.5
0.8 max. depth
15.8
max
seating
plane
15.8
max.
19
max.
3 max.
not tinned
3
2.5
13.5
min.
1
2
3
M
0.4
1.0 (2x)
0.6
2.5
0.9
0.7
2.54
0.5
5.08
1.3
Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
February 1996
6
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-60H
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1996
7
Rev 1.000
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