BUK7524-55 [NXP]
TrenchMOS transistor Standard level FET; 的TrenchMOS晶体管标准水平FET
| 型号： | BUK7524-55 |
| 厂家： | 
NXP |
| 描述： | TrenchMOS transistor Standard level FET |
| 文件： | 总8页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7524-55
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope using
’trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
SYMBOL
PARAMETER
MAX.
UNIT
VDS
ID
Ptot
Tj
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
55
45
103
175
24
V
A
W
˚C
mΩ
RDS(ON)
resistance
VGS = 10 V
general
purpose
switching
applications.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
d
tab
gate
2
drain
g
3
source
tab drain
s
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
VDGR
±VGS
ID
ID
IDM
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
-
-
-
-
-
-
-
-
55
55
16
45
31
180
103
175
V
V
V
A
A
A
W
˚C
RGS = 20 kΩ
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
Ptot
Tstg, Tj
- 55
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VC
Electrostatic discharge capacitor
voltage, all pins
Human body model
(100 pF, 1.5 kΩ)
-
2
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Rth j-mb
Thermal resistance junction to
mounting base
-
-
1.45
K/W
Rth j-a
Thermal resistance junction to
ambient
in free air
60
-
K/W
January 1997
1
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7524-55
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)DSS
VGS(TO)
Drain-source breakdown
voltage
Gate threshold voltage
VGS = 0 V; ID = 0.25 mA;
55
50
2.0
1.0
-
-
-
-
-
16
-
-
-
-
-
-
V
V
V
V
Tj = -55˚C
VDS = VGS; ID = 1 mA
3.0
-
-
0.05
-
0.02
-
-
4.0
-
4.4
10
500
1
20
-
24
50
Tj = 175˚C
Tj = -55˚C
IDSS
IGSS
Zero gate voltage drain current VDS = 55 V; VGS = 0 V;
Gate source leakage current VGS = ±10 V; VDS = 0 V
Gate source breakdown voltage IG = ±1 mA;
Drain-source on-state
resistance
µA
µA
µA
µA
V
mΩ
mΩ
Tj = 175˚C
Tj = 175˚C
±V(BR)GSS
RDS(ON)
VGS = 10 V; ID = 25 A
19
-
Tj = 175˚C
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
gfs
Forward transconductance
VDS = 25 V; ID = 25 A
4
11
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
-
-
1100 1500
pF
pF
pF
280
130
340
180
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 25 A;
VGS = 10 V; RG = 10 Ω
Resistive load
-
-
-
-
12
19
25
18
18
35
35
25
ns
ns
ns
ns
Ld
Ld
Ls
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
-
-
3.5
4.5
7.5
-
-
-
nH
nH
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IDR
Continuous reverse drain
current
-
-
45
A
IDRM
VSD
Pulsed reverse drain current
Diode forward voltage
-
-
-
-
160
1.2
-
A
V
IF = 25 A; VGS = 0 V
IF = 40 A; VGS = 0 V
0.95
1.0
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 40 A; -dIF/dt = 100 A/µs;
VGS = -10 V; VR = 30 V
-
-
40
0.07
-
-
ns
µC
January 1997
2
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7524-55
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 40 A; VDD ≤ 25 V;
-
-
80
mJ
VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C
Normalised Power Derating
PD%
ID / A
1000
120
110
100
90
80
70
60
50
40
30
20
10
0
RDS(ON) = VDS / ID
100
tp = 10 us
100 us
1 ms
10
DC
10 ms
100 ms
1
0
20
40
60
80
Tmb /
100 120 140 160 180
C
1
10
100
1000
VDS / V
Fig.1. Normalised power dissipation.
PD% = 100 PD/PD 25 ˚C = f(Tmb)
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Normalised Current Derating
Transient thermal impedance, Zth (K/W)
10
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
1
0.5
0.2
0.1
0.05
0.1
0.02
tp
T
tp
P
D
D =
0.01
0
t
T
0.001
0
20
40
60
80
100 120 140 160 180
10us
1ms
pulse width, tp (s)
0.1s
10s
Tmb /
C
Fig.2. Normalised continuous drain current.
ID% = 100 ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
January 1997
3
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7524-55
100
25
gfs/S
20
9
10
16
12
ID/A
VGS/V =
8.5
8.0
80
7.5
7.0
6.5
15
10
5
60
40
20
0
6.0
5.5
5.0
4.5
0
0
20
40
60
80
100
0
2
4
6
8
10
VSD/V
ID/A
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
RDS(ON)/mOhm
40
Rds(on) normlised to 25degC
a
2.5
2
VGS/V =
6
6.5
35
30
25
20
15
7
8
1.5
1
9
10
0.5
0
10
20
30
40
ID/A
50
60
70
80
-100
-50
0
50
Tmb / degC
100
150
200
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V
100
VGS(TO) / V
max.
5
4
3
2
1
0
ID/A
80
60
40
20
typ.
min.
Tj/C = 175
4
25
0
-100
-50
0
50
100
150
200
0
2
6
8
10
12
VGS/V
Tj / C
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
January 1997
4
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7524-55
100
IF/A
Sub-Threshold Conduction
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
80
60
40
20
0
2%
typ
98%
Tj/C =
175
25
0
0.5
1
1.5
VSDS/V
0
1
2
3
4
5
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
3
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
2.5
2
1.5
1
ThouandspF
5
20
40
60
80
100
120
140
160
180
0
0.01
0.1
1
10
100
VDS/V
Tmb /
C
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 75 A
12
VGS/V
10
VDD
+
VDS = 14V
L
VDS = 44V
8
6
4
2
0
VDS
-
VGS
-ID/100
T.U.T.
0
R 01
RGS
shunt
0
5
10
15
20
QG/nC
25
30
35
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 LID2 BVDSS/(BVDSS − VDD
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 50 A; parameter VDS
)
January 1997
5
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7524-55
VDD
+
-
RD
VDS
VGS
0
RG
T.U.T.
Fig.17. Switching test circuit.
January 1997
6
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7524-55
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
January 1997
7
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7524-55
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1997
8
Rev 1.000
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