BUK7L3R3-34BRC [NXP]
N-channel TrenchPLUS standard level FET; N沟道TrenchPLUS标准水平FET
| 型号： | BUK7L3R3-34BRC |
| 厂家： | 
NXP |
| 描述： | N-channel TrenchPLUS standard level FET |
| 文件： | 总14页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK7L3R3-34BRC
N-channel TrenchPLUS standard level FET
Rev. 02 — 26 September 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High-Performance Automotive (HPA) TrenchMOS technology, featuring very
low on-state resistance, internal gate resistor, ElectroStatic Discharge (ESD) protection
diodes and clamping diodes that are guaranteed to prevent MOSFET avalanching.
1.2 Features
I Internal gate resistor
I Q101 compliant
I 175 °C rated
I ESD and overvoltage protection
1.3 Applications
I Automotive systems
I General purpose power switching
I 12 V loads
I Motors, lamps and solenoids
1.4 Quick reference data
I EDS(AL)S ≤ 1.9 J
I ID ≤ 75 A
I RDSon = 2.9 mΩ (typ)
I Ptot ≤ 298 W
2. Pinning information
Table 1.
Pinning
Pin
1
Description
Simplified outline
Symbol
gate (G)
D
mb
2
drain (D)
3
source (S)
mb
mounting base; connected to drain (D)
G
S
sym094
1
2 3
SOT78C (TO-220)
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BUK7L3R3-34BRC TO-220
plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78C
BUK7L3R3-34BRC_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 26 September 2007
2 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max Unit
[1]
[1]
VDS
VDGR
VGS
ID
drain-source voltage
-
34
V
drain-gate voltage (DC)
gate-source voltage
drain current
RGS = 20 kΩ
-
34
V
-
±20
218
75
V
[2]
[3][4]
[3]
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
-
A
-
A
Tmb = 100 °C; VGS = 10 V; see Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
Tmb = 25 °C; see Figure 1
tp = 5 ms; δ = 0.01
-
75
A
IDM
peak drain current
-
872
298
50
A
Ptot
total power dissipation
drain-gate clamping current
gate-source clamping current
-
W
mA
mA
mA
IDG(CL)
IGS(CL)
-
continuous
-
10
tp = 5 ms; δ = 0.01
-
50
Tstg
Tj
storage temperature
junction temperature
−55
−55
+175 °C
+175 °C
Source-drain diode
[2]
IDR
reverse drain current
Tmb = 25 °C
-
-
-
218
75
A
A
A
[3][4]
IDRM
peak reverse drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
unclamped inductive load; ID = 75 A;
872
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
-
-
1.9
-
J
J
VDS ≤ 34 V; RGS = 50 Ω; VGS = 10 V; starting at
Tj = 25 °C
[5]
EDS(AL)R repetitive drain-source avalanche
energy
Vesd
electrostatic discharge voltage
all pins; human body model; R = 1.5 kΩ
C = 100 pF
-
-
8
8
kV
kV
C = 250 pF
[1] Voltage is limited by clamping.
[2] Current is limited by power dissipation chip rating.
[3] Continuous current is limited by package.
[4] Refer to literature 9397 750 12572 for further information.
[5] Maximum value not quoted. Refer to application note AN10273 for further information.
a) Repetitive rating defined in Figure 14.
b) Single-pulse avalanche rating limited by a Tj(max) of 175 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 170 °C.
BUK7L3R3-34BRC_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 26 September 2007
3 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03aa16
003aaa861
120
250
200
150
100
50
ID
Pder
(%)
(A)
80
40
0
(1)
0
0
50
100
150
200
0
50
100
150
200
Tmb ( C)
Tmb ( C)
°
°
V
GS ≥ 10 V
Ptot
Pder
=
× 100 %
-----------------------
(1) Capped at 75 A due to package
Ptot(25°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Continuous drain current as a function of
mounting base temperature
003aaa862
104
ID
(A)
103
Limit RDSon = VDS / ID
tp = 10 µs
100 µs
102
1 ms
(1)
DC
10 ms
100 ms
10
1
10-1
1
10
102
VDS (V)
Tmb = 25 °C; IDM is single pulse
(1) Capped at 75 A due to package
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7L3R3-34BRC_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 26 September 2007
4 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
5. Thermal characteristics
Table 4.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
60
-
Max Unit
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
-
-
-
K/W
K/W
Rth(j-mb)
0.5
003aaa863
1
Zth(j-mb)
(K/W)
δ
= 0.5
0.2
0.1
10-1
10-2
10-3
0.05
tp
T
P
δ =
0.02
single shot
t
tp
T
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7L3R3-34BRC_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 26 September 2007
5 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Static characteristics
V(BR)DG
drain-gate breakdown voltage ID = 2 mA; VGS = 0 V
Tj = 25 °C
34
34
-
-
45
45
-
V
V
V
Tj = −55 °C
-
VDS(CL)
VGS(th)
drain-source clamping
voltage
IGD(CL) = −2 mA; ID = 1 A; see Figure 17 and 18
41
gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
2
1
-
3
-
4
V
V
V
-
-
4.4
IDSS
drain leakage current
VDS = 16 V; VGS = 0 V
Tj = 25 °C
-
0.1
5
0.6
50
250
-
µA
µA
µA
V
Tj = 150 °C
-
Tj = 175 °C
-
30
22
V(BR)GSS gate-source breakdown
voltage
IG = ±1 mA; −55 °C < Tj < +175 °C
20
IGSS
gate leakage current
VGS = ±10 V; VDS = 0 V
Tj = 25 °C
-
-
5
-
1000 nA
Tj = 175 °C
50
µA
VGS = ±16 V; VDS = 0 V
Tj = 175 °C
-
-
150
µA
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; see Figure 7 and 8
Tj = 25 °C
[1]
-
-
-
2.9
-
3.3
6.3
-
mΩ
mΩ
Ω
Tj = 175 °C
RG
gate resistance
11
BUK7L3R3-34BRC_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 26 September 2007
6 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
Table 5.
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
ID = 25 A; VDS = 27 V; VGS = 10 V;
see Figure 12
-
-
-
-
-
-
-
-
-
-
-
109
22
-
-
-
nC
nC
nC
55
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 16
5050 6730 pF
1300 1560 pF
510
69
690
pF
ns
ns
ns
ns
nH
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω
-
-
-
-
-
150
290
210
4.5
td(off)
tf
turn-off delay time
fall time
LD
internal drain inductance
measure from drain lead 6 mm from package to
center of die
measure from contact screw on mounting base
to center of die
-
-
3.5
7.5
-
-
nH
nH
LS
internal source inductance
measure from source lead from package to
source bonding pad
Source-drain diode
VSD
trr
source-drain voltage
IS = 25 A; VGS = 0 V; see Figure 13
-
-
-
0.85 1.2
V
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = −100 A/µs;
93
65
-
-
ns
nC
VGS = 0 V; VR = 30 V
Qr
[1] RDSon measured at 1.5 mm away from the plastic body.
003aaa869
003aaa870
300
6
5
4
3
2
ID
8
9
(A)
RDSon
7
10
20
(mΩ)
250
200
150
100
50
6.5
6
5
VGS (V) = 4.5
0
0
2
4
6
8
10
0
5
10
15
20
V
DS (V)
VGS (V)
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK7L3R3-34BRC_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 26 September 2007
7 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03aa27
003aaa873
2
10
RDSon
a
(mΩ)
1.5
1
8
6
4
2
5.5
6
7
8
0.5
VGS (V) = 10
0
-60
0
60
120
180
0
40
80
120
160
200
T ( C)
°
j
ID (A)
Tj = 25 °C
RDSon
a =
-----------------------------
RDSon(25°C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
03aa32
03aa35
−1
5
10
V
I
D
(A)
GS(th)
(V)
min
typ
max
−2
−3
−4
−5
−6
4
3
2
1
0
10
max
typ
10
10
10
10
min
−60
0
60
120
180
0
2
4
6
T (°C)
j
V
(V)
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
BUK7L3R3-34BRC_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 26 September 2007
8 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
003aaa876
003aaa877
100
ID
10
VGS
(V)
(A)
80
8
6
4
2
0
VDS = 14 V
VDS = 27 V
60
40
Tj = 175 °C
Tj = 25 °C
20
0
0
2
4
6
0
50
100
150
QG (nC)
VGS (V)
VDS = 25 V
Tj = 25 °C; ID = 25 A
Fig 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 12. Gate-source voltage as a function of gate
charge; typical values
003aaa878
003aaa868
100
102
IS
IAL
(A)
80
(1)
(A)
10
60
40
(2)
(3)
1
20
Tj = 175 °C
Tj = 25 °C
0
0.0
10-1
0.2
0.4
0.6
0.8 1.0
VSD (V)
10-3
10-2
10-1
1
10
tAL (ms)
VGS = 0 V
See Table note 5 of Table 3 “Limiting values”.
(1) Single-pulse; Tj = 25 °C
(2) Single-pulse; Tj = 150 °C
(3) Repetitive
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
Fig 14. Single-pulse and repetitive avalanche rating;
avalanche current as a function of avalanche
time
BUK7L3R3-34BRC_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 26 September 2007
9 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
003aaa874
003aaa875
100
gfs
8000
6000
4000
2000
0
C
(pF)
(S)
80
60
40
20
0
Ciss
Coss
Crss
0
20
40
60
10-1
1
10
102
ID (A)
VDS (V)
Tj = 25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 15. Forward transconductance as a function of
drain current; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aaa727
003aac051
44
43
VDS(CL)
(V)
VDS(CL)
(V)
42
42
Tj = 175 °C
Tj = 175 °C
Tj = 25 °C
Tj = 25 °C
41
40
Tj = -55 °C
Tj = -55 °C
40
38
39
36
0
2
4
6
8
10
-3
-2
-1
0
IGD(CL) (mA)
ID (A)
IGD(CL) = −2 mA
ID = 10 A
Fig 17. Drain-source clamping voltage as a function of
drain current; typical values
Fig 18. Drain-source clamping voltage as a function of
gate-drain clamping current; typical values
BUK7L3R3-34BRC_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 26 September 2007
10 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads
SOT78C
E
p
A
A
1
mounting
base
q
D
1
q
1
D
q
2
L
Q
1
L
b
1
1
2
3
b
c
e
e
1
H
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
e
L
A
b
D
E
L
D
e
H
A
c
UNIT
mm
p
Q
q
q
q
2
1
1
1
1
1
1
4.58
4.31
1.33
1.21
0.87
0.76
1.33
1.21
0.44 15.07 6.47 10.40 2.64
0.33 14.80 6.22 10.00 2.44
5.16 6.03 14.00 6.10 3.90
5.00 5.76 13.50 5.58 3.78
2.72
2.40
2.95
2.69
3.80 12.40
3.42 12.00
Notes
1. Terminals in this zone are not tinned.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
01-12-11
03-01-21
SOT78C
3-lead TO-220
Fig 19. Package outline SOT78C (TO-220)
BUK7L3R3-34BRC_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 26 September 2007
11 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
8. Revision history
Table 6.
Document ID
BUK7L3R3-34BRC_2 20070926
Revision history
Release date
Data sheet status
Change notice
Supersedes
Product data sheet
-
BUK7L3R3-34BRC_1
Modifications:
• Table 5: updated maximum value of drain leakage current
• Table 5: added Table note 1
BUK7L3R3-34BRC_1 20070515
Product data sheet
-
-
BUK7L3R3-34BRC_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 26 September 2007
12 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BUK7L3R3-34BRC_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 26 September 2007
13 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
9.1
9.2
9.3
9.4
10
11
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 September 2007
Document identifier: BUK7L3R3-34BRC_2
相关型号：
©2020 ICPDF网 联系我们和版权申明