BUK7Y13-40B [NXP]
N-channel TrenchMOS standard level FET; N沟道的TrenchMOS标准水平FET
| 型号： | BUK7Y13-40B |
| 厂家： | 
NXP |
| 描述： | N-channel TrenchMOS standard level FET |
| 文件： | 总12页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK7Y13-40B
N-channel TrenchMOS standard level FET
Rev. 02 — 2 October 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance
I Q101 compliant
I 175 °C rated
I Standard level compatible
1.3 Applications
I Automotive ABS systems
I Automotive transmission control
I Fuel pump and injection
I Airbag
I Motors, lamps and solenoids
I Diesel injection systems
1.4 Quick reference data
I EDS(AL)S ≤ 91 mJ
I ID ≤ 55 A
I RDSon = 11 mΩ (typ)
I Ptot ≤ 75 W
2. Pinning information
Table 1.
Pin
Pinning
Description
Simplified outline
Symbol
1, 2, 3 source (S)
mb
D
4
gate (G)
mb
mounting base; connected to drain (D)
G
1
2 3 4
mbl798
S1 S2 S3
SOT669 (LFPAK)
BUK7Y13-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
plastic single-ended surface-mounted package; 4 leads
Version
BUK7Y13-40B
LFPAK
SOT669
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
VDS
VDGR
VGS
ID
drain-source voltage
-
-
-
-
-
-
-
40
V
V
V
A
A
A
W
drain-gate voltage (DC)
gate-source voltage
drain current
RGS = 20 kΩ
40
±20
55
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; see Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
Tmb = 25 °C; see Figure 1
38
IDM
Ptot
Tstg
Tj
peak drain current
220
75
total power dissipation
storage temperature
junction temperature
−55 +175 °C
−55 +175 °C
Source-drain diode
IDR
reverse drain current
peak reverse drain current
Tmb = 25 °C
-
-
55
A
A
IDRM
Tmb = 25 °C; pulsed; tp ≤ 10 µs
220
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche Unclamped inductive load; ID = 55 A;
-
-
91
mJ
-
energy
VDS ≤ 40 V; VGS = 10 V; RGS = 50 Ω; starting at
Tj = 25 °C
[1]
EDS(AL)R repetitive drain-source avalanche
energy
[1] Conditions:
a) Maximum value not quoted. Repetitive rating defined in Figure 16.
b) Single-pulse avalanche rating limited by Tj(max) of 175 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 170 °C.
d) Refer to application note AN10273 for further information.
BUK7Y13-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 October 2007
2 of 12
BUK7Y13-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aab844
003aab217
120
60
P
I
der
D
(%)
(A)
80
40
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T
(°C)
T
(°C)
mb
mb
VGS ≥ 10 V
Ptot
Pder
=
× 100 %
-----------------------
Ptot(25°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Continuous drain current as a function of
mounting base temperature
003aab218
3
10
Limit R
= V / I
DS D
I
DSon
D
(A)
2
10
t
= 10 µs
p
100 µs
10
1 ms
DC
10 ms
1
100 ms
−1
10
2
1
10
10
V
(V)
DS
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7Y13-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 October 2007
3 of 12
BUK7Y13-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4:
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
K/W
thermal resistance from junction to mounting base -
-
-
2
003aab219
1
Z
th(j−mb)
(K/W)
δ = 0.5
1
0.2
0.1
t
p
0.05
P
δ =
−1
10
T
0.02
t
t
p
single pulse
T
−2
10
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7Y13-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 October 2007
4 of 12
BUK7Y13-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
40
36
-
-
-
-
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
2
1
-
3
-
4
V
V
V
Tj = 175 °C
-
Tj = −55 °C
-
4.4
IDSS
drain leakage current
gate leakage current
VDS = 40 V; VGS = 0 V
Tj = 25 °C
-
-
-
0.02
1
µA
µA
nA
Tj = 175 °C
-
500
100
IGSS
VGS = ±20 V; VDS = 0 V
2
RDSon
drain-source on-state resistance VGS = 10 V; ID = 25 A; see Figure 6 and 8
Tj = 25 °C
-
-
11
-
13
25
mΩ
mΩ
Tj = 175 °C
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
ID = 10 A; VDS = 32 V; VGS = 10 V;
see Figure 14
-
-
-
-
-
-
-
-
-
-
19
6
-
-
-
nC
nC
nC
5.1
983
280
138
9
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
1311 pF
336
pF
pF
ns
ns
ns
ns
189
VDS = 30 V; RL = 2.5 Ω;
-
-
-
-
VGS = 10 V; RG = 10 Ω
25
35
27
td(off)
tf
turn-off delay time
fall time
Source-drain diode
VSD
trr
source-drain voltage
IS = 25 A; VGS = 0 V; see Figure 15
-
-
-
0.85 1.2
V
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = −100 A/µs;
41
22
-
-
ns
nC
VGS = 0 V; VR = 30 V
Qr
BUK7Y13-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 October 2007
5 of 12
BUK7Y13-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aab395
003aab394
20
160
I
D
20 10 9.5
R
DSon
(mΩ)
(A)
9
8.5
120
8
15
7.5
7
80
40
0
6.5
10
6
5.5
5
V
(V) = 4.5
GS
5
4
8
12
16
20
0
2
2
6
8
10
(V)
V
(V)
V
GS
DS
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aab851
003aab396
2
30
7
8
V
(V) = 6
GS
a
R
DSon
(mΩ)
1.5
20
10
1
0.5
0
20
10
0
−60
0
60
120
180
0
40
80
120
160
T (°C)
j
I
(A)
D
Tj = 25 °C
RDSon
a =
-----------------------------
RDSon(25°C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7Y13-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 October 2007
6 of 12
BUK7Y13-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aab852
003aab853
−1
−2
−3
−4
−5
−6
5
10
I
V
D
GS(th)
(A)
(V)
min
typ
max
4
10
10
10
10
10
max
typ
3
2
1
0
min
−60
0
60
120
160
0
2
4
6
T (°C)
V
(V)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aab401
003aab397
70
1600
g
fs
C
(S)
(pF)
C
iss
60
1200
800
400
0
C
oss
50
40
30
C
rss
−1
2
5
10
15
20
25
30
10
1
10
10
I
(A)
V
(V)
D
DS
Tj = 25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7Y13-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 October 2007
7 of 12
BUK7Y13-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aab400
003aab399
50
10
I
V
GS
D
(A)
(V)
40
8
6
4
2
0
V
= 14 V
DS
V
= 32 V
DS
30
20
10
0
T = 175 °C
j
T = 25 °C
j
0
2
4
6
0
8
16
24
V
(V)
Q (nC)
G
GS
VDS = 25 V
Tj = 25 °C; ID = 10 A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 14. Gate-source voltage as a function of gate
charge; typical values
003aab398
003aab220
2
60
10
I
s
(A)
I
AL
(1)
(A)
40
10
(2)
T = 175 °C
j
20
T = 25 °C
j
(3)
0
1
10
−3
−2
−1
0
0.2
0.4
0.6
0.8
V
1.0
(V)
10
10
1
10
t
(ms)
SD
AL
VGS = 0 V
See Table note 1 of Table 3 Limiting values.
(1) Single-pulse; Tj = 25 °C.
(2) Single-pulse; Tj = 150 °C.
(3) Repetitive.
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
Fig 16. Single-pulse and repetitive avalanche rating;
avalanche current as a function of avalanche
time
BUK7Y13-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 October 2007
8 of 12
BUK7Y13-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
A
2
E
A
C
c
E
1
b
2
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
M
c
A
b
1/2 e
A
(A )
3
C
A
1
θ
L
detail X
y
C
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
D
(1)
D
(1)
(1)
1
A
A
A
H
L
L
L
2
w
y
θ
UNIT
A
b
b
b
b
c
c
E
E
1
e
1
2
3
1
2
3
4
2
max
1.20 0.15 1.10
1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10
0.35 3.62 2.0 0.7 0.19 0.24 3.80
5.0 3.3
4.8 3.1
6.2 0.85 1.3 1.3
5.8 0.40 0.8 0.8
8°
0°
mm
0.25
4.20
1.27
0.25 0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-10-13
06-03-16
SOT669
MO-235
Fig 17. Package outline SOT669 (LFPAK)
BUK7Y13-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 October 2007
9 of 12
BUK7Y13-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
8. Revision history
Table 6.
Revision history
Document ID
BUK7Y13-40B_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20071002
-
BUK7Y13-40B_1
• Changed Descriptive title and Alternative descriptive title variables
from “N-channel TrenchMOS logic level FET” to “N-channel
TrenchMOS standard level FET”.
BUK7Y13-40B_1
20070924
Product data sheet
-
-
BUK7Y13-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 October 2007
10 of 12
BUK7Y13-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BUK7Y13-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 October 2007
11 of 12
BUK7Y13-40B
NXP Semiconductors
N-channel TrenchMOS standard level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
9.1
9.2
9.3
9.4
10
11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 October 2007
Document identifier: BUK7Y13-40B_2
相关型号：
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