BUK7Y18-75B,115 [NXP]
BUK7Y18-75B - N-channel TrenchMOS standard level FET SOIC 4-Pin;型号: | BUK7Y18-75B,115 |
厂家: | NXP |
描述: | BUK7Y18-75B - N-channel TrenchMOS standard level FET SOIC 4-Pin 开关 脉冲 晶体管 |
文件: | 总13页 (文件大小:304K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
6
5
K
BUK7Y18-75B
N-channel TrenchMOS standard level FET
A
P
F
L
1 March 2013
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
2. Features and benefits
Q101 compliant
•
•
•
Suitable for standard level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
3. Applications
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
•
•
•
•
•
•
•
Engine management
General purpose power switching
Motors, lamps and solenoids
Transmission control
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
75
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 4
-
-
-
-
-
-
49
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
105
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
VGS = 10 V; ID = 20 A; Tj = 25 °C;
Fig. 12; Fig. 13
-
-
13.8
18
-
mΩ
nC
ID = 20 A; VDS = 60 V; VGS = 10 V;
Fig. 14
14.24
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NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
Symbol
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
Parameter
Conditions
Min
Typ
Max
Unit
ID = 49 A; Vsup ≤ 75 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
-
-
118
mJ
source avalanche
energy
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
S
S
S
G
D
source
source
source
gate
2
G
3
mbb076
4
1
2 3 4
mb
mounting base; connected to
drain
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK7Y18-75B
LFPAK56;
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
SOT669
Power-SO8
7. Marking
Table 4.
Marking codes
Type number
Marking code
BUK7Y18-75B
71875B
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
75
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
-
V
V
V
A
VDGR
VGS
-
75
-20
-
20
ID
Tmb = 25 °C; VGS = 10 V; Fig. 1; Fig. 4
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1 March 2013
49
BUK7Y18-75B
© NXP B.V. 2013. All rights reserved
Product data sheet
2 / 13
NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
Symbol
Parameter
Conditions
Min
Max
34.9
198
105
175
175
Unit
A
Tmb = 100 °C; VGS = 10 V; Fig. 1
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
Tmb = 25 °C; Fig. 2
-
IDM
Ptot
Tstg
Tj
peak drain current
-
A
total power dissipation
storage temperature
junction temperature
-
W
-55
-55
°C
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
49
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
198
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
ID = 49 A; Vsup ≤ 75 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
-
118
-
mJ
J
avalanche energy
EDS(AL)R
repetitive drain-source
avalanche energy
Fig. 3
[1][2][3] -
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[3] Refer to application note AN10273 for further information.
003aac508
03na19
120
50
ID
P
(A)
der
(%)
40
80
30
20
10
0
40
0
0
50
100
150
200
0
50
100
150
200
Tmb (°C)
T
(°C)
mb
Fig. 1. Continuous drain current as a function of
mounting base temperature
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
BUK7Y18-75B
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Product data sheet
1 March 2013
3 / 13
NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
003aac487
102
IAL
(A)
(1)
10
(2)
(3)
1
10-1
10-3
10-2
10-1
1
10
tAL (ms)
(1) Single pulse; Tj = 25°C.
(2) Single pulse; Tj = 150°C.
(3) Repetitive.
Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
003aad516
103
ID (A)
Limit RDSon = VDS / ID
102
t = 10
p
s
µ
100
s
µ
10
1
DC
1 ms
10 ms
100 ms
10-1
1
10
102
103
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
1.42
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
-
K/W
BUK7Y18-75B
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Product data sheet
1 March 2013
4 / 13
NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
003aac479
10
Zth (j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
10-1
0.05
t
p
P
δ =
0.02
T
10-2
single shot
t
t
p
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
75
68
2
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
3
4
voltage
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
-
-
-
4.4
-
V
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
1
IDSS
drain leakage current
gate leakage current
VDS = 75 V; VGS = 0 V; Tj = 25 °C
VDS = 75 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.02
1
µA
µA
nA
nA
mΩ
-
500
100
100
43.2
IGSS
2
2
-
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 20 A; Tj = 175 °C;
Fig. 12; Fig. 13
VGS = 10 V; ID = 20 A; Tj = 25 °C;
Fig. 12; Fig. 13
-
13.8
18
mΩ
Dynamic characteristics
QG(tot) total gate charge
QGS
ID = 20 A; VDS = 60 V; VGS = 10 V;
Fig. 14
-
-
-
35
-
-
-
nC
nC
nC
gate-source charge
gate-drain charge
8.28
14.24
QGD
BUK7Y18-75B
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Product data sheet
1 March 2013
5 / 13
NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
Symbol
Ciss
Parameter
Conditions
Min
Typ
Max
Unit
input capacitance
output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; Fig. 15
-
-
-
1630 2173 pF
Coss
274
115
329
158
pF
pF
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 1.5 Ω; VGS = 10 V;
RG(ext) = 10 Ω
-
-
-
-
18.5
22.5
44.5
19.8
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 25 V; Tj = 25 °C;
Fig. 16
-
0.85
1.2
V
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
55.4
143
-
-
ns
VDS = 30 V
Qr
recovered charge
nC
003aad509
003aad510
40
ID
(A)
80
20 10
4.3
4.5
4.7
4.9
VGS (V) =
5.1
RDSon
(m
VGS (V) =
5.1
4.9
)
Ω
30
60
40
20
0
20
10
0
4.7
4.5
4.3
10
20
0
1
2
3
4
5
VDS (V)
0
10
20
30
40
ID (A)
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig. 7. Drain-source on-state resistance as a function
of drain current; typical values.
BUK7Y18-75B
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Product data sheet
1 March 2013
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NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
003aad511
003aad552
40
56
ID
(A)
gfs
(S)
30
44
32
20
20
10
0
25
C
°
T = 175
C
°
j
0
20
40
60
0
2
4
6
VGS (V)
ID (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values.
Fig. 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aa32
03aa35
- 1
5
10
I
V
D
GS(th)
(A)
(V)
min
typ
max
- 2
- 3
- 4
- 5
- 6
4
10
10
10
10
10
max
3
typ
2
min
1
0
- 60
0
60
120
180
0
2
4
6
T (°C)
j
V
(V)
GS
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Sub-threshold drain current as a function of
junction temperature gate-source voltage
BUK7Y18-75B
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Product data sheet
1 March 2013
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NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
03nq03
003aad616
3
a
60
RDSON
(m
)
Ω
2
1
0
40
20
0
-60
-20
20
60
100
140
180
4
8
12
16
20
Tj (°C)
VGS (V)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig. 13. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
003aad513
003aad514
104
10
VGS
(V)
8
C
(pF)
VDS = 14 V
Ciss
6
VDS = 60 V
103
4
2
0
Coss
Crss
102
10-1
102
0
10
20
30
40
1
10
QG (nC)
VDS (V)
Fig. 14. Gate-source voltage as a function of gate
charge; typical values.
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
BUK7Y18-75B
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Product data sheet
1 March 2013
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NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
003aad512
40
IS
(A)
30
20
10
0
175
C
°
T = 25 C
°
j
0.2
0.4
0.6
0.8
1
VSD (V)
Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
BUK7Y18-75B
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Product data sheet
1 March 2013
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NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
11. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
b
2
1
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e
A
(A )
3
C
A
1
q
L
detail X
y
C
θ
8
0
0
5 mm
°
°
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10
nom
min 1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3
6.2 0.85 1.3 1.3
5.8 0.40 0.8 0.8
0.1
0.25
1.27
0.25
mm
0.35 3.62 2.0 0.7 0.19 0.24 3.80
4.8 3.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
sot669_po
References
Outline
version
European
projection
Issue date
11-03-25
IEC
JEDEC
JEITA
SOT669
MO-235
13-02-27
Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)
BUK7Y18-75B
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Product data sheet
1 March 2013
10 / 13
NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.2 Definitions
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
12.3 Disclaimers
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
BUK7Y18-75B
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© NXP B.V. 2013. All rights reserved
Product data sheet
1 March 2013
11 / 13
NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BUK7Y18-75B
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Product data sheet
1 March 2013
12 / 13
NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
13. Contents
1
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 10
2
3
4
5
6
7
8
9
10
11
12
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
12.1
12.2
12.3
12.4
© NXP B.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
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Date of release: 1 March 2013
BUK7Y18-75B
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© NXP B.V. 2013. All rights reserved
Product data sheet
1 March 2013
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