BUK964R2-80E [NXP]
120A, 80V, 0.0042ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2;型号: | BUK964R2-80E |
厂家: | NXP |
描述: | 120A, 80V, 0.0042ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2 局域网 开关 脉冲 晶体管 |
文件: | 总14页 (文件大小:215K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUK964R2-80E
AK
D2P
N-channel TrenchMOS logic level FET
Rev. 2 — 16 May 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This
product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for thermally demanding
environments due to 175 °C rating
Repetitive avalanche rated
True logic level gate with Vgst(th)
rating of greater than 0.5V at 175 °C
1.3 Applications
12V, 24V and 48V Automotive
Transmission control
systems
Ultra high performance power
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
switching
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min
Typ
Max
80
Unit
V
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
-
-
[1]
ID
VGS = 5 V; Tmb = 25 °C; Tmb = 25 °C;
see Figure 1
120
A
Ptot
total power dissipation Tmb = 25 °C; see Figure 2
-
-
-
357
4.2
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 11
3.4
mΩ
QGD
gate-drain charge
VGS = 5 V; ID = 25 A; VDS = 64 V;
see Figure 13; see Figure 14
-
37.5
-
nC
[1] Continuous current is limited by package.
BUK964R2-80E
NXP Semiconductors
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
2
drain
source
3
G
mb
mounting base;
connected to drain
mbb076
S
2
1
3
SOT404 (D2PAK)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK964R2-80E
D2PAK
plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
SOT404
4. Marking
Table 4.
Marking codes
Type number
BUK964R2-80E
Marking code
BUK964R2-80E
BUK964R2-80E
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 16 May 2012
2 of 14
BUK964R2-80E
NXP Semiconductors
N-channel TrenchMOS logic level FET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
DC
Min
Max
80
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
-
VDGR
VGS
-
80
V
-10
-15
-
10
V
Pulsed
15
V
[1]
[1]
ID
drain current
Tmb = 25 °C; Tmb = 25 °C; VGS = 5 V;
see Figure 1
120
A
Tmb = 100 °C; VGS = 5 V; see Figure 1
-
-
120
740
A
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
see Figure 4
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tmb = 25 °C; see Figure 2
-
357
175
175
W
-55
-55
°C
°C
Source-drain diode
[1]
IS
source current
peak source current
Tmb = 25 °C
-
-
120
740
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
[2][3]
ID = 120 A; Vsup ≤ 80 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped;
see Figure 3
-
485
mJ
[1] Continuous current is limited by package.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
BUK964R2-80E
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 16 May 2012
3 of 14
BUK964R2-80E
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aag356
03aa16
120
240
ID
P
(%)
(A)
der
180
80
120
(1)
40
60
0
0
0
50
100
150
200
0
50
100
150
200
Tmb ( C)
°
T
(°C)
mb
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aag367
103
IAL
(A)
102
10
(1)
(2)
(3)
1
10-1
10-3
10-2
10-1
1
10
tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK964R2-80E
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 16 May 2012
4 of 14
BUK964R2-80E
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aag357
103
ID
(A)
Limit RDSon = VDS / ID
μ
tp =10
s
102
10
1
μ
100
s
DC
1 ms
10 ms
100 ms
10-1
10-1
1
10
102
103
VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to mounting base
see Figure 5
-
-
0.42
K/W
Rth(j-a)
thermal resistance from
junction to ambient
minimum footprint; mounted on
a printed-circuit board
-
50
-
K/W
003aaf570
1
Zth(j-mb)
(K/W)
= 0.5
0.2
0.1
10-1
10-2
10-3
0.05
0.02
tp
T
P
t
tp
single shot
T
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.
BUK964R2-80E
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 16 May 2012
5 of 14
BUK964R2-80E
NXP Semiconductors
N-channel TrenchMOS logic level FET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
80
72
1.4
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
1.7
2.1
voltage
see Figure 9; see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
-
-
-
2.45
-
V
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
0.5
IDSS
drain leakage current
gate leakage current
VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 80 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.08
-
1
µA
µA
nA
nA
mΩ
500
100
100
4.2
IGSS
2
2
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 11
3.4
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11
-
-
3.2
-
4
mΩ
mΩ
VGS = 5 V; ID = 25 A; Tj = 175 °C;
10.4
see Figure 12; see Figure 11
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = 25 A; VDS = 64 V; VGS = 5 V;
see Figure 13; see Figure 14
-
-
-
-
-
-
123
-
-
-
nC
nC
nC
gate-source charge
gate-drain charge
input capacitance
output capacitance
26.6
37.5
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
12850 17130 pF
Coss
Crss
850
420
1020 pF
reverse transfer
capacitance
580
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 60 V; RL = 2.4 Ω; VGS = 5 V;
RG(ext) = 5 Ω
-
-
-
-
-
70
-
-
-
-
-
ns
ns
ns
ns
nH
109
203
115
2.5
turn-off delay time
fall time
LD
internal drain
inductance
from upper edge of drain mounting base
to center of die
LS
internal source
inductance
from source lead to source bonding
pad
-
-
7.5
-
nH
V
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
0.77
1.2
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
61
-
-
ns
VDS = 25 V
Qr
recovered charge
139
nC
BUK964R2-80E
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 16 May 2012
6 of 14
BUK964R2-80E
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aag358
003aag363
200
10
RDSon
(mΩ)
VGS (V) =
10
4.0
3.0
2.9
ID
(A)
8
6
4
2
0
150
2.8
2.7
2.6
100
50
0
2.5
2.4
0
0.5
1
1.5
2
0
2
4
6
8
10
VGS (V)
VDS (V)
Tj = 25 °C; tp = 300 μs
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aag359
003aah025
400
3
VGS(th)
(V)
ID
(A)
2.5
max
300
200
100
2
typ
1.5
min
1
°
Tj = 175
C
°
Tj = 25
C
0.5
0
0
-60
0
2
4
6
0
60
120
180
VGS (V)
T ( C)
°
j
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 9. Gate-source threshold voltage as a function of
junction temperature
BUK964R2-80E
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 16 May 2012
7 of 14
BUK964R2-80E
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aah026
003aag364
10-1
12
RDSon
(mΩ)
2.6
2.7
2.8
VGS (V) =
ID
(A)
10-2
2.9
9
min
typ
max
10-3
6
3
0
3.0
4.0
10-4
10-5
10-6
10.0
0
1
2
3
0
50
100
150
200
VGS (V)
ID (A)
Tj = 25 °C; tp = 300 µs
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
003aae090
3
a
V
DS
2.4
I
D
1.8
1.2
0.6
0
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
-60
0
60
120
180
003aaa508
T ( C)
°
j
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Gate charge waveform definitions
BUK964R2-80E
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 16 May 2012
8 of 14
BUK964R2-80E
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aag365
003aag361
10
VGS
105
C
(V)
(pF)
8
Ciss
104
6
14 V
4
2
0
103
VDS = 64 V
Coss
Crss
102
10-1
0
80
160
240
1
10
102
Q
G (nC)
VDS (V)
Tj = 25 °C; ID = 25 A
VGS = 0 V; f = 1 MHz
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aag366
200
IS
(A)
150
100
50
°
Tj = 175
C
°
Tj = 25
0.9
C
0
0
0.3
0.6
1.2
VSD (V)
VGS = 0 V
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK964R2-80E
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 16 May 2012
9 of 14
BUK964R2-80E
NXP Semiconductors
N-channel TrenchMOS logic level FET
8. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-02-11
06-03-16
SOT404
Fig 17. Package outline SOT404 (D2PAK)
BUK964R2-80E
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 16 May 2012
10 of 14
BUK964R2-80E
NXP Semiconductors
N-channel TrenchMOS logic level FET
9. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK964R2-80E v.2
Modifications:
20120516
Product data sheet
-
BUK964R2-80E v.1
• Status changed from objective to product.
• Various changes to content.
BUK964R2-80E v.1
20120404
Objective data sheet
-
-
BUK964R2-80E
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 16 May 2012
11 of 14
BUK964R2-80E
NXP Semiconductors
N-channel TrenchMOS logic level FET
10. Legal information
10.1 Data sheet status
Document status[1] [2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make
10.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
10.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
BUK964R2-80E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 16 May 2012
12 of 14
BUK964R2-80E
NXP Semiconductors
N-channel TrenchMOS logic level FET
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published athttp://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
11. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
BUK964R2-80E
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 16 May 2012
13 of 14
BUK964R2-80E
NXP Semiconductors
N-channel TrenchMOS logic level FET
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
9
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
10
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
10.1
10.2
10.3
10.4
11
Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 May 2012
Document identifier: BUK964R2-80E
相关型号:
BUK96608-55A
TRANSISTOR 75 A, 55 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power
NXP
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