BUW14 [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BUW14 |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总6页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
GENERAL DESCRIPTION
High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1000
450
0.5
1
20
-
V
V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Fall time
-
-
-
-
A
ICM
A
W
µs
Ptot
tf
Tmb ≤ 60 ˚C
0.4
PINNING - SOT82
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
emitter
collector
base
2
b
3
2
3
1
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1000
450
0.5
1
0.2
0.3
0.3
20
150
150
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
IB
Collector current peak value
Base current (DC)
-
A
-
A
IBM
Base current peak value
Reverse base current peak value 1
Total power dissipation
-
A
-IBM
Ptot
Tstg
Tj
-
-
A
Tmb ≤ 60 ˚C
W
˚C
˚C
Storage temperature
Junction temperature
-65
-
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-mb
Rth j-a
Junction to mounting base
Junction to ambient
-
-
4.5
-
K/W
K/W
in free air
100
1 Turn-off current.
March 1992
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
VEB = 5 V; IC = 0 A
IB = 0 A; IC = 100 mA;
L = 25 mH
-
-
-
-
100
1.0
µA
;
mA
IEBO
VCEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
1.0
-
mA
V
450
VCEsat
VCEsat
VBEsat
hFE
Collector-emitter saturation voltages IC = 0.1 A; IB = 10 mA
IC = 0.2 A; IB = 20 mA
Base-emitter saturation voltage
DC current gain
-
-
-
0.8
1.0
1.0
-
V
V
V
IC = 0.2 A; IB = 20 mA
IC = 50 mA; VCE = 5 V
IC = 300 mA; VCE = 5 V
-
-
50
50
hFE
25
100
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
fT
Transition frequency
IC = 0.2 A; VCE = 10 V; f = 1 MHz
20
-
MHz
Switching times (resistive load circuit) ICon = 0.2 A; IBon = 20 mA;
-IBoff = 40 mA; VCC = 250 V
ton
ts
tf
Turn-on time
0.4
3.5
0.4
-
0.7
5.0
-
µs
µs
µs
µs
Turn-off storage time
Turn-off fall time
tf
Turn-off fall time
Tmb = 95 ˚C
1.3
IC / mA
+ 50v
100-200R
250
200
Horizontal
Oscilloscope
Vertical
100
0
1R
300R
6V
min
VCE / V
30-60 Hz
VCEOsust
Fig.1. Test circuit for VCEOsust
.
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
March 1992
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
hFE
5V
VCC
1000
100
10
R
L
VIM
R
B
1V
0
T.U.T.
tp
Tj = 25 C
Tj = 125 C
T
1
0.01
0.1
IC / A
1
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
Fig.6. Typical DC current gain. hFE = f(IC)
parameter VCE
VCC = 150 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
ICon
VCESAT / V
90 %
10 %
90 %
10
1
Tj = 25 C
Tj = 125 C
IC
0.2 A
ts
0.1 A
tf
ton
toff
0.1
IBon
IB
IC=0.05 A
10 %
tr 30ns
0.01
1.0
0.001
0.01
0.1
-IBoff
IB / A
Fig.4. Switching times waveforms with resistive load.
Fig.7. Typical collector-emitter saturation voltage.
VCEsat = f(IB); parameter IC
Normalised Power Derating
PD%
VBESAT / V
B
120
110
100
90
80
70
60
50
40
30
20
10
0
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC=
50 mA
100 mA
200 mA
0
20
40
60
80
Tmb /
100
120
140
0
0.04
0.08
0.12
IB / A
0.16
0.2
C
Fig.5. Normalised power dissipation.
PD% = 100 PD/PD 25˚C = f (Tmb)
Fig.8. Typical base-emitter saturation voltage.
VBEsat = f(IB); parameter IC
March 1992
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
Fig.9. Forward bias safe operating area.
(1) Ptot max line.
(2) Second-breakdown limits.
I
Region of permissible DC operation.
II Permissible extension for repetitive pulse
operation.
III Area of permissible operation during turn-on
in single transistor converters, provided
R
BE ≤ 100 Ω and tp ≤ 0.6 µs.
IV Repetitive pulse operation in this region is
permissible provided VBE ≤ 0 and tp ≤ 2 ms.
Fig.10. Transient thermal impedance.
Zth j-mb = f(t); parameter δ = duty cycle.
March 1992
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g
2.8
2.3
mounting
base
7.8
max
3.75
3.1
2.5
11.1
max
1)
2.54
max
1.2
15.3
min
2
3
1
0.5
4.58
2.29
0.88
max
1) Lead dimensions within this
zone uncontrolled.
Fig.11. SOT82; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT82 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
March 1992
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1992
6
Rev 1.000
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