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BUX84S/T3 [NXP]

TRANSISTOR 2 A, 400 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power;
BUX84S/T3
型号： BUX84S/T3
厂家： NXP    NXP
描述：

TRANSISTOR 2 A, 400 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power

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Philips Semiconductors  
Product specification  
NPN high voltage  
Power transistor  
BUX84S  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Fast switching  
VCESM = 800 V  
c
• Excellent thermal stability  
• High thermal cycling performance  
• Low thermal resistance  
• Surface mounting package  
VCEO = 400 V  
IC = 2 A  
b
VCE(SAT) ≤ 1 V (IC = 1 A)  
e
tf = 0.4 µs (typ)  
GENERAL DESCRIPTION  
PINNING  
SOT428  
High voltage, high speed glass  
passivated NPN power transistor in  
a plastic package.  
PIN  
DESCRIPTION  
tab  
1
2
3
4
base  
Applications:-  
Off-line SMPS  
TV and monitor power supplies  
Inverters  
Electronic lighting ballasts  
collector1  
emitter  
2
collector (tab)  
1
3
The BUX84S is supplied in the  
SOT428 (DPAK) surface mounting  
package.  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
VCESM Collector-emitter voltage  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VBE = 0 V  
-
800  
V
(peak value)  
Collector-emitter voltage  
(DC)  
Emitter-base voltage  
Collector current (DC)  
Collector current (peak  
value)  
VCEO  
base open circuit  
collector open circuit  
tp = 2 ms  
-
400  
V
VEBO  
IC  
ICM  
-
-
-
5
2
3
V
A
A
IB  
IBM  
-IBM  
Base current (DC)  
Base current (peak value)  
Reverse base current (peak  
value during turn-off)  
Total power dissipation  
Operating junction and  
storage temperature  
-
-
-
0.75  
1
1
A
A
A
Ptot  
Tj, Tstg  
Tmb = 25 ˚C  
-
50  
150  
W
˚C  
- 65  
1 It is not possible to make connection to pin:2 of the SOT428 package.  
February 1999  
1
Rev 1.000  
Philips Semiconductors  
Product specification  
NPN high voltage  
Power transistor  
BUX84S  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Thermal resistance junction  
to mounting base  
-
-
2.5  
K/W  
Rth j-a  
Thermal resistance junction pcb mounted, FR4 board, minimum  
to ambient footprint  
-
50  
-
K/W  
ELECTRICAL CHARACTERISTICS  
Tj= 25˚C unless otherwise specified  
For characteristic curves, refer to BUX84 data sheet.  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VCEO(sust  
VCE(SAT)  
VBE(SAT)  
ICES  
Collector-emitter sustaining IC = 100 mA; IB(OFF) = 0 A; L = 25 mH  
400  
-
-
V
voltage  
Collector-emitter saturation  
voltage  
Base-emitter saturation  
voltage  
IC = 0.3 A; IB = 30 mA  
IC = 1 A; IB = 0.2 A  
IC = 1 A; IB = 0.2 A  
-
-
-
-
-
-
0.8  
1
1.1  
V
V
V
Collector-emitter cut-off  
current  
VCEM = 800 V; VBE = 0 V  
-
-
-
15  
20  
-
-
-
-
50  
200  
1.5  
1
µA  
mA  
mA  
VCEM = 800 V; VBE = 0 V; Tj = 125˚C  
IEBO  
hFE  
Emitter-base cut-off current VEB = 5 V; IC = 0 A  
DC current gain  
VCE = 5 V; IC = 5 mA  
VCE = 5 V; IC = 100 mA  
-
100  
fT  
Transition frequency  
Turn-on time  
VCE = 10 V; IC = 200 mA; f = 1 MHz  
-
-
20  
-
MHz  
ton  
IC(on) = 1 A; IB(on) = 200 mA; IB(off) = -400 mA;  
0.2  
0.5  
µs  
VCC = 250 V  
Tj = 25˚C  
Tj = 95˚C  
tf  
Fall time  
-
-
-
0.4  
-
2
-
µs  
µs  
µs  
1.4  
3.5  
ts  
Storage time  
February 1999  
2
Rev 1.000  
Philips Semiconductors  
Product specification  
NPN high voltage  
Power transistor  
BUX84S  
MECHANICAL DATA  
Plastic surface mounted package (Philips version of D-PAK); 2 leads  
SOT428  
seating plane  
A
y
A
2
E
A
A
1
b
D
1
2
E
1
D
H
E
L
2
L
1
L
1
2
b
b
w
M
A
c
1
e
e
1
0
10  
20 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
b
E
H
E
max.  
D
L
1
min.  
A
max.  
E
max.  
y
D
max.  
1
1
(1)  
1
A
b
2
A
UNIT  
mm  
b
c
e
e
1
L
L
w
2
1
2
max.  
max.  
min.  
max.  
0.65 0.89  
0.45 0.71  
0.7  
0.5  
2.38  
2.22  
0.89 1.1  
0.71 0.9  
5.36  
5.26  
0.4 6.22  
0.2 5.98  
6.73  
6.47  
2.95  
2.55  
10.4  
9.6  
4.81  
4.45  
4.57  
0.2  
0.2  
4.0 2.285  
0.5  
Note  
1. Measured from heatsink back to lead.  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SOT428  
97-06-11  
Fig.1. SOT428 surface mounting package. Centre pin connected to mounting base.  
Notes  
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static  
discharge during transport or handling.  
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.  
3. Epoxy meets UL94 V0 at 1/8".  
February 1999  
3
Rev 1.000  
Philips Semiconductors  
Product specification  
NPN high voltage  
Power transistor  
BUX84S  
MOUNTING INSTRUCTIONS  
Dimensions in mm  
7.0  
7.0  
2.15  
2.5  
1.5  
4.57  
Fig.2. SOT428 : soldering pattern for surface mounting.  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1999  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
February 1999  
4
Rev 1.000  

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