BUX87P [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BUX87P |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总6页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
GENERAL DESCRIPTION
High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
87P
UNIT
BUX 86P
VCESM
VCEO
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
VBE = 0 V
-
-
800
400
1000
450
V
V
VCESAT
IC
ICM
Ptot
tf
Collector-emitter saturation voltage
Collector current (DC)
Collector current peak value
Total power dissipation
Fall time
IC = 0.2 A; IB = 20 mA
-
1
0.5
1
42
-
V
A
-
-
-
A
Tmb ≤ 25 ˚C
W
µs
IC = 0.2 A; IB(on) = 20 mA
0.28
PINNING - SOT82
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
emitter
collector
base
2
b
3
2
3
e
1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BUX 86P
87P
VCESM
VCEO
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
VBE = 0 V
-
-
800
400
1000
450
V
V
VEBO
IC
Emitter-base voltage (open collector)
Collector current (DC)
-
5
V
A
-
0.5
1
ICM
IB
Collector current (peak value) tp = 2 ms
Base current (DC)
-
A
-
0.2
0.3
0.3
42
150
150
A
IBM
-IBM
Ptot
Tstg
Tj
Base current (peak value)
Reverse base current (peak value)1
Total power dissipation
Storage temperature
Junction temperature
-
A
-
-
A
Tmb ≤ 25 ˚C
W
˚C
˚C
-40
-
1 Turn-off current.
November 1995
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-mb
Rth j-a
Junction to mounting base
Junction to ambient
-
3
-
K/W
K/W
in free air
100
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
100
1.0
µA
;
mA
IEBO
Emitter cut-off current
VEB = 5 V; IC = 0 A
-
-
-
-
1
0.8
1
mA
V
V
V
VCEsat
VCEsat
VBEsat
hFE
Collector-emitter saturation voltages IC = 0.1 A; IB = 10 mA
IC = 0.2 A; IB = 20 mA
-
-
Base-emitter saturation voltage
DC current gain
IC = 0.2 A; IB = 20 mA
IC = 50 mA; VCE = 5 V
-
-
1
26
50
-
125
-
VCEOsust
Collector-emitter sustaining voltage IC = 100 mA;
BUX86P 400
V
V
IBoff = 0; L = 25 mH BUX87P 450
-
-
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Switching times (resistive load).
IC = 0.2 A; IBon = 20 mA; -IBoff = 40 mA;
VCC = 250 V
ton
ts
tf
Turn-on time
0.25
2
0.28
-
0.5
3.5
-
µs
µs
µs
µs
Turn-off storage time
Turn-off fall time
Turn-off fall time
tf
Tmb = 95 ˚C
1.3
November 1995
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
VCC
Zth / (K/W)
10
1
0.5
R
L
0.2
0.1
VIM
R
B
tp
t
p
P
0.05
D =
D
0
T.U.T.
T
0.1
0.01
0.02
tp
t
T
D= 0
T
1.0E-06
0.0001
0.01
1
t / s
Fig.1. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
ICon
VBESAT / V
90 %
10 %
90 %
0.9
0.8
0.7
0.6
IC =
IC
0.2 A
0.1 A
50 mA
ts
tf
ton
toff
IBon
IB
10 %
tr 30ns
0
5
10
15
20
-IBoff
IB / mA
Fig.2. Switching times waveforms with resistive load.
Fig.5. Typical base-emitter saturation voltage.
VBEsat = f(IB); parameter IC
Normalised Power Derating
PD%
VCESAT / V
120
110
100
90
80
70
60
50
40
30
20
10
0
10
8
IC =
50 mA
0.1 A
0.2 A
6
4
2
0
0
20
40
60
80
Tmb /
100
120
140
0
5
10
15
IB / mA
20
25
30
C
Fig.3. Normalised power dissipation.
PD% = 100 PD/PD 25 ˚C = f (Tmb)
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f(IB); parameter IC
November 1995
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
hFE
1000
100
10
IC / A
BUX87P
Typical gain
Limit gain
VCE=5V
Tj=25 C
10
1
= 0.01
ICM max
IC max
1
II
tp =
0.001
0.01
0.1
1
IC / A
0.1
Fig.7. Typical DC current gain.
hFE = f(IC); parameter VCE.
1 ms
Arrows indicate conditions protected by 100% test.
I
10 ms
DC
hFE
0.01
0.001
1000
100
10
Typical gain
Limit gain
VCE=5V
Tj=95 C
10
100
1000
VCE / V
Fig.10. Forward bias safe operating area. Tmb = 25 ˚C
I
Region of permissible DC operation.
Extension for repetitive pulse operation.
Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
II
1
NB:
0.001
0.01
0.1
1
IC / A
Fig.8. Typical DC current gain.
hFE = f(IC); parameter VCE
hFE
1000
100
10
Typical gain
Limit gain
VCE=5V
Tj= -40 C
1
0.001
0.01
0.1
1
IC / A
Fig.9. Typical DC current gain.
hFE = f(IC); parameter VCE
November 1995
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g
2.8
2.3
mounting
base
7.8
max
3.75
3.1
2.5
11.1
max
1)
2.54
max
1.2
15.3
min
2
3
1
0.5
4.58
2.29
0.88
max
1) Lead dimensions within this
zone uncontrolled.
Fig.11. SOT82; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT82 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
November 1995
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1995
6
Rev 1.100
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