BY329X-1500S,127 [NXP]
DIODE 1500 V, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-3, Rectifier Diode;型号: | BY329X-1500S,127 |
厂家: | NXP |
描述: | DIODE 1500 V, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-3, Rectifier Diode 软恢复二极管 高压快速软恢复二极管 局域网 |
文件: | 总6页 (文件大小:36K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329X-1500, BY329X-1500S
FEATURES
SYMBOL
QUICK REFERENCE DATA
VR = 1500 V
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
VF ≤ 1.35 V / 1.5 V
k
1
a
2
IF(peak) = 6 A (f = 16 kHz)
I
F(peak) = 6 A (f = 70 kHz)
FSM ≤ 75 A
trr ≤ 230 ns / 160 ns
I
GENERAL DESCRIPTION
PINNING
SOD113
Glass-passivated double diffused
rectifier diode featuring low forward
voltage drop, fast reverse recovery
and soft recovery characteristic.
The device is intended for use in TV
receivers and PC monitors.
PIN
DESCRIPTION
anode
cathode
isolated
case
1
2
tab
The BY329X series is supplied in
the conventional leaded SOD113
package.
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VRSM
VRRM
VRWM
Peak non-repetitive reverse
-
1500
V
voltage
Peak repetitive reverse
voltage
Crest working reverse voltage
-
-
1500
V
V
1300
BY329X
-1500
-1500S
IF(peak)
Peak working forward current f = 16 kHz
f = 70 kHz
-
-
6
-
-
A
A
6
IFRM
IF(RMS)
Peak repetitive forward
current
RMS forward current
Peak non-repetitive forward
current
t = 25 µs; δ = 0.5; Ths ≤ 86 ˚C
-
14
A
-
-
11
75
A
A
IFSM
t = 10 ms
sinusoidal; Tj = 150 ˚C prior to
surge; with reapplied VRWM(max)
Tstg
Tj
Storage temperature
Operating junction
temperature
-40
-
150
150
˚C
˚C
September 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329X-1500, BY329X-1500S
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
waveform;
-
2500
V
both terminals to external
heatsink
R.H. ≤ 65% ; clean and dustfree
Capacitance from both terminals f = 1 MHz
to external heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Thermal resistance junction to with heatsink compound
-
-
-
-
-
55
4.8
5.9
-
K/W
K/W
K/W
heatsink
without heatsink compound
Rth j-a
Thermal resistance junction to in free air.
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
BY329X- 1500 1500S 1500 1500S
VF
IR
Forward voltage
Reverse current
IF = 6.5 A
1.1
1.3
1.2
250
1
1.45
1.6
1.5
250
1
V
V
µA
mA
IF = 6.5 A; Tj = 125 ˚C
VR = 1300 V
1.05
1.35
-
-
-
-
VR = 1300 V; Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
BY329X 1500 1500S 1500 1500S
trr
Reverse recovery time
IF = 1 A; VR ≥ 30 V;
dIF/dt = 50A/µs
0.18 0.13
0.23
0.16
µs
Qs
Vfr
tfr
Reverse recovery charge
IF = 2 A; -dIF/dt = 20 A/µs
1.6
17
210
0.7
23
220
2.0
30
300
0.95
40
320
µC
V
ns
Peak forward recovery voltage IF = 6.5A; dIF/dt = 50A/µs
Forward recovery time
IF = 6.5A; dIF/dt = 50A/µs
September 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329X-1500, BY329X-1500S
Maximum pulse width / us
I
100
10
1
F
VRRM
V
pulse
width tp
time
period T
10%
time
tfr
V
F
V
fr
5V
V
F
10
100
time
line frequency / kHz
Fig.1. Definition of Vfr and tfr
Fig.4. Maximum allowable pulse width tp versus line
frequency; Basic horizontal deflection circuit.
IF / A
dI
F
30
20
10
0
I
F
Tj = 125 C
Tj = 25 C
dt
trr
time
typ
Qs
100%
25%
I
max
1.5
R
0
0.5
1
2
VF / V
Fig.2. Definition of trr and Qs
Fig.5. BY329-1500 Typical and maximum forward
characteristic IF = f(VF); parameter Tj
IF / A
VCC
30
20
10
0
Tj = 125 C
Tj = 25 C
Line output transformer
LY
typ
Cf
Cs
max
D1
deflection transistor
0
0.5
1
1.5
2
VF / V
Fig.3. Basic horizontal deflection circuit.
Fig.6. BY329-1500S Typical and maximum forward
characteristic IF = f(VF); parameter Tj
September 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329X-1500, BY329X-1500S
Transient thermal impedance, Zth j-hs (K/W)
10
1
0.1
p
t
p
t
P
0.01
D
D =
T
t
T
0.001
1us
10us 100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
Fig.7. Transient thermal impedance Zth = f(tp)
September 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329X-1500, BY329X-1500S
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
6.4
2.5
0.8 max. depth
15.8
max
seating
plane
15.8
max.
19
max.
3 max.
not tinned
3
2.5
13.5
min.
1
2
M
0.4
1.0 (2x)
0.6
2.5
0.9
0.7
2.54
0.5
5.08
Fig.8. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329X-1500, BY329X-1500S
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
6
Rev 1.100
相关型号:
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NXP
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