BY428 [NXP]
Damper diode; 阻尼二极管
NXP 
DISCRETE SEMICONDUCTORS
DATA SHEET
BY428
Damper diode
1996 Sep 26
Product specification
Supersedes data of May 1996
Philips Semiconductors
Product specification
Damper diode
BY428
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass package, using a high
temperature alloyed construction.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Available in ammo-pack
k
a
• Also available with preformed leads
for easy insertion.
MAM104
APPLICATIONS
• Damper diode in high frequency
horizontal deflection circuits up to
64 kHz.
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
1500
1500
1400
4
UNIT
VRSM
VRRM
VR
non-repetitive peak reverse voltage
repetitive peak reverse voltage
continuous reverse voltage
working peak forward current
−
−
−
−
V
V
V
A
IFWM
Ttp = 80 °C; lead length = 10 mm;
see Fig.2
IFRM
IFSM
repetitive peak forward current
−
−
8
A
A
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj = Tj max prior to surge;
VR = VRRMmax
50
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+150
°C
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
1.60
1.95
150
UNIT
VF
IF = 4 A; Tj = Tj max; see Fig.3
IF = 4 A; see Fig.3
V
V
IR
trr
reverse current
VR = VRmax; Tj = 150 °C
µA
ns
reverse recovery time
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.6
250
tfr
forward recovery time
when switched to IF = 5 A in 50 ns;
Tj = Tj max; see Fig.7
250
ns
1996 Sep 26
2
Philips Semiconductors
Product specification
Damper diode
BY428
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
25
75
40
K/W
K/W
K/W
mounted as shown in Fig.5
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.4.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 26
3
Philips Semiconductors
Product specification
Damper diode
BY428
GRAPHICAL DATA
MBH409
MBH410
4
8
handbook, halfpage
handbook, halfpage
P
I
tot
F
(W)
(A)
3
6
2
1
0
4
2
0
0
0
1
2
3
4
5
6
1
2
3
V
(V)
F
I
(A)
FWM
Solid line: basic high-voltage E/W modulator circuit; see Fig.8.
Dotted line: basic conventional horizontal deflection circuit; see Fig.9.
Curves include power dissipation due to switching losses.
Dotted line: Tj = 150 °C.
Solid line: Tj = 25 °C.
Fig.2 Maximum total power dissipation as a
function of working peak forward current.
Fig.3 Forward current as a function of forward
voltage; maximum values.
35
handbook, halfpage
10
50
handbook, halfpage
25
2
2
3 cm
copper
3 cm
copper
7
50
30
10
2
3
MGA204
MGA200
25.4
Dimensions in mm.
Dimensions in mm.
Fig.5 Mounting with additional printed-circuit
board for heat sink purposes.
Fig.4 Device mounted on a printed-circuit board.
1996 Sep 26
4
Philips Semiconductors
Product specification
Damper diode
BY428
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.6 Test circuit and reverse recovery time waveform and definition.
MGD600
handbook, halfpage
V
F
90%
100%
t
t
fr
I
F
10%
t
Fig.7 Forward recovery time definition.
1996 Sep 26
5
Philips Semiconductors
Product specification
Damper diode
BY428
APPLICATION INFORMATION
For horizontal deflection circuits, two basic applications are shown in Figs 8 and 9.
The maximum allowable total power dissipation for the diode can be calculated from the thermal resistance Rth j-a and
the difference between Tj max and Tamb max in the application. The maximum IFWM can then be taken from Fig.2.
The basic application waveforms in Fig.10 relate to the circuit in Fig.8. In the circuit in Fig.9 the forward conduction time
of the diode is shorter, allowing a higher IFWM (see Fig.2).
handbook, halfpage
horizontal
deflection
transistor
horizontal
deflection
transistor
handbook, halfpage
D1
L
Y
L
Y
D1
C
f
C
s
+ (E-W)
MBE934
MBE935
D1 = BY428.
D1 = BY428.
Fig.8 Application in basic high-voltage E/W
modulator circuit.
Fig.9 Application in basic horizontal deflection
circuit.
I
I
FRM
F
I
FWM
time
V
RRM
V
R
time
t
p
MCD430 - 1
T
Fig.10 Basic application waveforms.
6
1996 Sep 26
Philips Semiconductors
Product specification
Damper diode
BY428
PACKAGE OUTLINE
k
a
1.35
max
4.5
max
MBC049
28 min
5.0 max
28 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.11 SOD64.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 26
7
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