BY479X-1700 [NXP]
Damper diode fast, high-voltage; 阻尼二极管快速，高电压
| 型号： | BY479X-1700 |
| 厂家： | 
NXP |
| 描述： | Damper diode fast, high-voltage |
| 文件： | 总6页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY479X-1700
FEATURES
SYMBOL
QUICK REFERENCE DATA
VR = 1700 V
• Low forward volt drop
• Low Forward recovery voltage
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
VF ≤ 1.2 V
k
1
a
2
Vfr ≤ 19 V
IFWM = 10 A
IFRM ≤ 100 A
tfr ≤ 300 ns
GENERAL DESCRIPTION
PINNING
SOD113
Glass-passivated double diffused
rectifier diode featuring fast forward
recovery and low forward recovery
voltage. The device is intended for
use in multi-sync monitor deflection
circuits up to 64kHz. The device is
designed to withstand transient
reverse voltages up to 1700V.
PIN
DESCRIPTION
cathode
anode
isolated
case
1
2
tab
1
2
The BY479X series is supplied in
the conventional leaded SOD113
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VRSM
Peak non-repetitive reverse
-
1700
V
voltage during flash-over of
picture tube
VRRM
VRWM
IFWM
IFRM
Peak repetitive reverse voltage t = 3.5 µs; f = 64kHz
Crest working reverse voltage
-
-
-
-
-
-
1700
1300
10
100
100
110
V
V
A
A
A
A
Peak working forward current1 f = 64kHz; Ths ≤ 126 ˚C
Peak repetitive forward current t = 100 µs
IFSM
Peak non-repetitive forward
current
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 150 ˚C prior to
surge; with reapplied VRWM(max)
Tstg
Tj
Storage temperature
Operating junction temperature
-40
-
150
150
˚C
˚C
1 Including worst case forward recovery losses, see fig:5.
September 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY479X-1700
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
waveform;
-
2500
V
both terminals to external
heatsink
R.H. ≤ 65% ; clean and dustfree
Capacitance from both terminals f = 1 MHz
to external heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Thermal resistance junction to with heatsink compound
-
-
-
-
-
55
4.8
5.9
-
K/W
K/W
K/W
heatsink
without heatsink compound
Rth j-a
Thermal resistance junction to in free air
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 6.5 A
-
-
-
-
0.95
1.3
1.2
0.25
1.0
V
IF = 6.5 A; Tj = 125 ˚C
VR = VRWMmax
0.85
V
IR
Reverse current
-
-
mA
mA
VR = VRWMmax; Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Vfr
tfr
Forward recovery voltage
Forward recovery time
IF = 6.5 A; dIF/dt = 50 A/µs
-
-
-
-
-
12
19
300
-
350
3.0
V
IF = 6.5 A; dIF/dt = 50 A/µs; VF = 5 V
IF = 6.5 A; dIF/dt = 50 A/µs; VF = 2 V
IF = 1 A; -dIF/dt = 50 A/µs; VR ≥ 30 V
IF = 2 A; -dIF/dt = 20 A/µs; VR ≥ 30 V
200
400
250
2.0
ns
ns
ns
µC
trr
Qs
Reverse recovery time
Reverse recovery charge
September 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY479X-1700
Maximum pulse width / us
I
100
10
1
F
VRRM
V
pulse
width tp
time
period T
10%
time
tfr
V
F
V
fr
5V / 2V
time
V
F
10
100
line frequency / kHz
Fig.1. Definition of Vfr and tfr
Fig.4. Maximum allowable pulse width tp versus line
frequency; Basic horizontal deflection circuit.
Ths / C
Ptot / W
IF
dI
F
6
5
4
3
2
1
0
121.2
130.8
140.4
150
I
F
dt
IFWM
trr
ton
time
f = 64 kHz
time
Qs
100%
25%
I
R
0
2
4
6
8
10
IFWM / A
Fig.2. Definition of trr and Qs
Fig.5. Total dissipation Ptot = f(IFWM); including forward
recovery losses; Basic horizontal deflection circuit.
IF / A
VCC
30
20
10
0
Tj = 125 C
Tj = 25 C
Line output transformer
LY
typ
max
Cf
Cs
D1
deflection transistor
1.5
0
1
2
0.5
VF / V
Fig.3. Basic horizontal deflection circuit.
Fig.6. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
September 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY479X-1700
Transient thermal impedance, Zth j-hs (K/W)
Vfr / V
30
10
1
max
typ
20
10
0
0.1
p
t
p
t
P
0.01
D
D =
T
t
T
0.001
1us
10us 100us 1ms
10ms 100ms
1s
10s
150
50
0
100
dIF/dt (A/us)
200
pulse width, tp (s)
Fig.7. Typical and maximum Vfr = f(dIF/dt); IF = 6.5A;
Tj = 25˚C
Fig.9. Transient thermal impedance Zth = f(tp)
trr / us
IF = 10 A
2
1.5
1
5 A
2 A
1 A
0.5
0
1
10
100
-dIF/dt (A/us)
Fig.8. Maximum reverse recovery time trr = f(dIF/dt);
parameter Tj; VR≥30V
September 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY479X-1700
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
6.4
2.5
0.8 max. depth
15.8
max
seating
plane
15.8
max.
19
max.
3 max.
not tinned
3
2.5
13.5
min.
1
2
M
0.4
1.0 (2x)
0.6
2.5
0.9
0.7
2.54
0.5
5.08
Fig.10. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY479X-1700
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
6
Rev 1.200
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