BY614 [NXP]
Miniature high-voltage soft-recovery rectifier; 微型高压软恢复整流器
| 型号： | BY614 |
| 厂家： | 
NXP |
| 描述： | Miniature high-voltage soft-recovery rectifier |
| 文件： | 总6页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3
BY614
Miniature high-voltage
soft-recovery rectifier
1996 Sep 26
Product specification
Supersedes data of May 1996
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
expansion of all used parts are
FEATURES
DESCRIPTION
matched.
• Glass passivated
Miniature glass package, using a high
temperature alloyed construction.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
• High maximum operating
temperature
This package is hermetically sealed
and fatigue free as coefficients of
• Low leakage current
• Excellent stability
• Soft-recovery switching
characteristics
a
k
handbook, halfpage
• Very compact construction.
MAM162
APPLICATIONS
The cathode lead is marked with a black band.
• Miniature high-voltage assemblies
such as voltage multipliers.
Fig.1 Simplified outline (SOD61H2) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
non-repetitive peak reverse voltage
repetitive peak reverse voltage
working reverse voltage
CONDITIONS
MIN.
MAX.
2200
2200
2000
2000
50
UNIT
VRSM
VRRM
VRW
VR
−
−
−
−
−
V
V
V
V
continuous reverse voltage
average forward current
IF(AV)
averaged over any 20 ms period;
PCB mounting (see Fig.5);
Tamb = 65 °C; see Fig.2;
see also Fig.3
mA
IFRM
IFSM
repetitive peak forward current
−
−
500
1
mA
A
non-repetitive peak forward current
t ≤ 10 ms; half sinewave;
Tj = Tj max prior to surge;
VR = VRWmax
Tstg
Tj
storage temperature
junction temperature
−65
−65
+150
+150
°C
°C
1996 Sep 26
2
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
IR
IF = 50 mA; Tj = Tj max; see Fig.4
−
−
−
−
−
−
6
3
1
V
reverse current
recovery charge
VR = VRWmax; Tj = 120 °C
µA
Qr
when switched from IF = 100 mA to
VR ≥ 100 V and dIF/dt = −200 mA/µs;
see Fig.6
nC
tf
fall time
when switched from IF = 100 mA to
VR ≥ 100 V and dIF/dt = −200 mA/µs;
see Fig.6
100
−
−
−
2
−
ns
ns
pF
trr
reverse recovery time
diode capacitance
when switched from IF = 100 mA to
VR ≥ 100 V and dIF/dt = −200 mA/µs;
see Fig.6
300
−
Cd
VR = 0 V; f = 1 MHz
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
100
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
K/W
K/W
155
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.5.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 26
3
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
GRAPHICAL DATA
MBH389
MBH390
80
1000
handbook, halfpage
handbook, halfpage
I
F(AV)
(mA)
1.42
a = 3 2.5 2 1.57
P
(mW)
60
40
20
0
500
0
0
0
40
80
120
160
(°C)
50
100
I
(mA)
F(AV)
T
amb
a = 1.57; δ = 0.5; VR = VRWmax; device mounted as shown in Fig.5.
a = IF(RMS)/IF(AV); δ = 0.5; VR = VRWmax.
Fig.2 Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
Fig.3 Maximum steady state power dissipation
(forward plus leakage losses) as a function
of average forward current.
MBH402
200
handbook, halfpage
50
handbook, halfpage
25
I
F
(mA)
7
50
100
2
3
0
0
10
20
MGA200
V
(V)
F
Dotted line: Tj = 150 °C.
Solid line: Tj = 25 °C.
Dimensions in mm.
Fig.4 Forward current as a function of maximum
forward voltage.
Fig.5 Device mounted on a printed-circuit board.
1996 Sep 26
4
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
handbook, halfpage
I
F
dI
F
dt
t
rr
t
10%
Q
r
90%
I
R
t
MGD569
f
Fig.6 Reverse recovery definitions.
1996 Sep 26
5
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
PACKAGE OUTLINE
0.6
k
a
3
max
2.2
3
max
32.5 min
max
32.5 min
MGD602
Dimensions in mm.
The marking band indicates the cathode.
Fig.7 SOD61H2.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 26
6
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