BYC10-600 [NXP]
Rectifier diode ultrafast, low switching loss; 整流二极管超快，低开关损耗
| 型号： | BYC10-600 |
| 厂家： | 
NXP |
| 描述： | Rectifier diode ultrafast, low switching loss |
| 文件： | 总6页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC10-600
FEATURES
SYMBOL
QUICK REFERENCE DATA
VR = 600 V
• Extremely fast switching
• Low reverse recovery current
• Low thermal resistance
• Reduces switching losses in
associated MOSFET
VF ≤ 1.8 V
k
1
a
2
IF(AV) = 10 A
trr = 19 ns (typ)
APPLICATIONS
PINNING
SOD59 (TO220AC)
• Active power factor correction
• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched
mode power supplies.
PIN
DESCRIPTION
cathode
anode
cathode
tab
1
2
The BYC10-600 is supplied in the
SOD59 (TO220AC) conventional
leaded package.
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VRRM
VRWM
VR
Peak repetitive reverse voltage
-
-
-
-
600
600
500
10
V
V
V
A
Crest working reverse voltage
Continuous reverse voltage
Average forward current
T
mb ≤ 114 ˚C
δ = 0.5; with reapplied VRRM(max)
mb ≤ 78 ˚C1
IF(AV)
;
;
T
IFRM
IFSM
Repetitive peak forward current δ = 0.5; with reapplied VRRM(max)
-
20
A
T
mb ≤ 78 ˚C1
Non-repetitive peak forward
current.
t = 10 ms
t = 8.3 ms
-
-
65
71
A
A
sinusoidal; Tj = 150˚C prior to surge
with reapplied VRWM(max)
Tstg
Tj
Storage temperature
Operating junction temperature
-40
-
150
150
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to in free air.
ambient
-
-
-
2
-
K/W
K/W
60
September 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC10-600
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 10 A; Tj = 150˚C
IF = 20 A; Tj = 150˚C
IF = 10 A;
-
-
-
-
-
-
1.4
1.7
2.0
9
1.8
2.3
2.8
200
3.0
-
V
V
V
IR
Reverse current
VR = 600 V
µA
mA
ns
VR = 500 V; Tj = 100 ˚C
IF = 10 A to VR = 400 V;
dIF/dt = 500 A/µs
IF = 10 A to VR = 400 V;
dIF/dt = 500 A/µs; Tj = 125˚C
1.1
19
trr
Reverse recovery time
Reverse recovery time
trr
-
-
-
32
9.5
8
40
12
11
ns
A
Irrm
Vfr
Peak reverse recovery current IF = 10 A to VR = 400 V;
dIF/dt = 500 A/µs; Tj = 125˚C
IF = 10 A; dIF/dt = 100 A/µs
Forward recovery voltage
V
ID
Vin = 400 V d.c.
IL
Vin
Vin
Vo = 400 V d.c.
IR IF
150 uH
typ
OUTPUT DIODE
inductive load
IL
500 V MOSFET
Fig.1. Typical application, output rectifier in boost
converter power factor correction circuit. Continuous
conduction, mode where the transistor turns on whilst
forward current is still flowing in the diode.
Fig.2. Typical application, freewheeling diode in half
bridge converter. Continuous conduction mode, where
each transistor turns on whilst forward current is still
flowing in the other bridge leg diode.
September 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC10-600
Irrm
Forward dissipation, PF (W)
Tmb(max) C
D = 1.0
30
25
20
15
10
5
90
ID
Vo = 1.3 V
Rs = 0.05 Ohms
dIF/dt
100
ID = IL
0.5
losses due to
diode reverse recovery
110
120
130
140
150
0.2
0.1
time
p
t
t
p
I
D =
VD
T
t
T
0
0
5
10
15
Average forward current, IF(AV) (A)
Fig.3. Maximum forward dissipation as a function of
average forward current; rectangular current
waveform where IF(AV) =IF(RMS) x √D.
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
Reverse recovery time, trr (ns)
Diode reverse recovery switching losses, Pdsw (W)
0.25
100
f = 20 kHz
Tj = 125 C
0.2 VR = 400 V
10 A
20 A
0.15
10 A
IF = 5 A
20 A
0.1
Tj = 125 C
VR = 400 V
IF = 5 A
0.05
0
10
100
1000
100
1000
Rate of change of current, dIF/dt (A/us)
Rate of change of current, dIF/dt (A/us)
Fig.4. Typical reverse recovery switching losses in
diode, as a function of rate of change of current dIF/dt.
Fig.7. Typical reverse recovery time trr, as a function
of rate of change of current dIF/dt.
Transistor losses due to diode reverse recovery, Ptsw (W)
8
Peak reverse recovery current, Irrm (A)
100
10
1
20 A
7
6
f = 20 kHz
Tj = 125 C
5
10 A
VR = 400 V
4
3
2
1
0
20 A
IF = 5 A
IF = 5 A
Tj = 125 C
VR = 400 V
100
1000
100
1000
Rate of change of current, dIF/dt (A/us)
Rate of change of current, dIF/dt (A/us)
Fig.5. Typical switching losses in transistor due to
reverse recovery of diode, as a function of of change
of current dIF/dt.
Fig.8. Typical peak reverse recovery current, Irrm as a
function of rate of change of current dIF/dt.
September 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC10-600
Forward current, IF (A)
Tj = 25 C
dI
20
15
10
5
I
F
F
Tj = 150 C
dt
t
rr
max
time
typ
Q
100%
10%
s
I
I
R
rrm
0
0
1
2
3
4
Forward voltage, VF (V)
Fig.9. Definition of reverse recovery parameters trr, Irrm
Fig.12. Typical and maximum forward characteristic
IF = f(VF); Tj = 25˚C and 150˚C.
Peak forward recovery voltage, Vfr (V)
Reverse leakage current (A)
20
15
10
5
100mA
10mA
1mA
Tj = 25 C
IF = 10 A
Tj = 125 C
100 C
typ
75 C
100uA
10uA
1uA
50 C
25 C
0
0
50
100
150
200
0
100
200
300
400
500
600
Rate of change of current, dIF/dt (A/ s)
Reverse voltage (V)
Fig.10. Typical forward recovery voltage, Vfr as a
function of rate of change of current dIF/dt.
Fig.13. Typical reverse leakage current as a function
of reverse voltage. IR = f(VR); parameter Tj
Transient thermal impedance, Zth j-mb (K/W)
10
I
F
1
time
0.1
V
F
p
t
p
t
P
0.01
D
D =
T
V
fr
t
T
V
0.001
F
1us
10us 100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
time
Fig.11. Definition of forward recovery voltage Vfr
Fig.14. Maximum thermal impedance Zth j-mb as a
function of pulse width.
September 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC10-600
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
(2x)
1
2
0,9 max (2x)
0,6
2,4
5,08
Fig.15. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC10-600
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
6
Rev 1.100
相关型号：
BYC10B-600/T3
DIODE 10 A, 600 V, SILICON, RECTIFIER DIODE, PLASTIC, SMD, D2PAK-3, Rectifier Diode
NXP
©2020 ICPDF网 联系我们和版权申明