BYC3/49DX-600 [NXP]
Bipolar Power Product Selection Guide; 双极电源产品选型指南
| 型号： | BYC3/49DX-600 |
| 厂家： | 
NXP |
| 描述： | Bipolar Power Product Selection Guide |
| 文件： | 总6页 (文件大小：475K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bipolar Power Product
Selection Guide
Efficient, Reliable and Green
Thyristors
4-QuadrantTriacs
IGT key:
D
E
F
-
5 mA (10 mA in3+)
SOT78D
(internally
(TO220AB) insulated
TO220AB)
SOT186A
(isolated
TO220AB)
10 mA (25 mA in 3+)
25 mA (70 mA in 3+)
35 mA (70 mA in 3+)
50 mA (100 mA in 3+)
SOT54
(TO92)
SOT78
SOT404
(D2PAK)
SOT428
(DPAK)
SOT82
SOT223
G
IT(RMS)
(A)
VDRM
(V)
I
GT (max)
(mA)
400
600
5/5/5/7
5/5/5/7
5/5/5/7
5/5/5/7
5/5/5/7
3/3/3/7
3/3/3/7
5/5/5/7
MAC97A6
MAC97A8
BT1306-D
BT1308-D
Z00607MA
0.6
0.8
400 / 600
400 / 600
600
BT1308W-D
BT131W
600
600 / 800
600 / 800
600 / 800
600 / 800
600 / 800
600 / 800
600 / 800
600 / 800
600 / 800
600
BT131
BT131-D
10/10/10/10
BT131-E
3/3/3/5
Z0103MA/NA
Z0107MA/NA
Z0109MA/NA
Z0103MA0/NA0**
Z0107MA0/NA0**
Z0109MA0/NA0**
BT132-D*
Z0103MN/NN
Z0107MN/NN
1
5/5/5/7
10/10/10/10
Z0109MN/NN
3/3/3/5
Z0103MN0/NN0**
Z0107MN0/NN0**
Z0109MN0/NN0**
5/5/5/7
10/10/10/10
5/5/5/10
600
D/E/-/G
BT134
BT134
800
E/-
600
D/-
BT136
BT136
BT136X
BT136X
BT136X
BT136S
BT136S
BT136S
BT136S
BT136S
4
6
8
600
F
600 / 800
800
E
BT136B
F
800
-
BT136X
BT236X
BT236X
BT137X
BT137X
BT137X
BT137X
600
F/-/G
800
-/G
600
D/-/G
BT137
BT137
BT137S
BT137S
BT137S
BT137S
BT137S
600
E
BT137B
BT137B
600
F
800
E
BT137
BT137
800
F
BT137B
BT137B
BT137B
800
-
BT137X
800
G
BT137S
600
D
BT138
BT138
BT138X
BT138X
BT138X
BT138X
BT138X
BT138X
600
-/G
BT138B
BT138B
BT138B
600
F
12
16
600 / 800
800
E
BT138
BT138Y
F
800
-
BT138
BT138
BT139
800
G
600
E/-
BT139X
BT139X
BT139X
BT139B
BT139B
BT139B
BT139B
BT139B
BT139B
BT139B
600
F
600
G
800
E
BT139
800
F
800
-
BT139
BT139
BT139X
800
G
20
25
600
50/50/50/75
50/50/50/75
-
MAC223A8X
400
MAC223A6
BTA140
600 / 800
* Large chip / high ITSM
** Enhanced immunity to false triggering
Triacs part numbering
High T max
j
Type number
V
DRM
150 °C
3-Quadrant
4-Quadrant
BTA312B-600CT
BT137X-600D
Gate sensitivity
I
max:
GT
D = 5/5/5 mA
E = 10/10/10 mA
F = 25/25/25 mA
C = 35/35/35 mA
B = 50/50/50 mA
Gate sensitivity
I
max:
GT
Package indentifier:
D = 5/5/5/10 mA
= SOT78 (TO220AB)
E = 10/10/10/25 mA
F = 25/25/25/70 mA
= 35/35/35/70 mA
G = 50/50/50100 mA
2
B = SOT404 (D PAK)
S = SOT428 (DPAK)
W= SOT223
X = SOT186A (isolated TO220AB)
Y = SOT78D (internally insulated TO220AB)
brb643
Thyristors
3-QuadrantTriacs
types in bold red represent new products
IGT key:
SOT78D
(internally
insulated
TO220AB)
D
E
F
-
5 mA (10 mA in3+)
SOT186A
(isolated
TO220AB)
10 mA (25 mA in 3+)
25 mA (70 mA in 3+)
35 mA (70 mA in 3+)
50 mA (100 mA in 3+)
SOT54
(TO92)
SOT78
(TO220AB)
SOT404
(D2PAK)
SOT428
(DPAK)
SOT223
G
IT(RMS)
(A)
VDRM
(V)
I
GT (max)
(mA)
0.8
1
600 / 800
600 / 800
600 / 800
600 / 800
600
800
1000
600
800
D/E
B/E/ER
E
D/E
B/C/D/E/F
B/C/E
C
B/D/E/F
B/E
BTA2008
BTA201
BTA201W
2
BTA202X
BTA204X
BTA204X
BTA204X
BTA208X
BTA208X
BTA204
BTA204
BTA204S
4
8
BTA204S
BTA204S
BTA208S
BTA208S
BTA208S
BTA208
BTA208
BTA208
800
1000
F
B
BTA208X
BTA208X
1000
C
BTA208X
BTA208B
1000
600
600
5 min - 35 max
BTA208X-1000C0
BTA312X
D
CT
B/C/E
C
ET
B/C
BT/D
B/C/E
BTA312
BTA312
BTA312
BTA312B
BTA312B
BTA312B
600 / 800
600 / 800
800
600 / 800
600
600 / 800
600 / 800
800
BTA312X
12
BTA312Y
BTA412Y
BTA312
BTA312B
BTA316B
BTA316
BTA316
BTA316
BTA316X
16
25
ET
10 min - 50 max
BTA316X-800B0
600 / 800
600
600 / 800
B/C
BT
B
BTA416Y
BTA225
BTA225
BTA225B
Silicon Controlled Rectifiers
types in bold red represent new products
SOT186A
(isolated
TO220AB)
SOT54
(TO92)
SOT78
(TO220AB)
SOT404
(D2PAK)
SOT428
(DPAK)
SOT533
(IPAK)
SOT82
SOT223
IT(RMS)
(A)
I
GT (max)
(mA)
VDRM & VRRM (V)
400
400 (VDRM only)
0.012
0.2
EC103D1
NXL0840
200 / 400 / 600
200 / 400 / 600
0.2
0.2
0.05
0.1
BT149B/D/G
BT169B/D/G
BT169D-L
BT169H
0.8
400
800
500 / 600
200
0.02 min - 0.2 max
BT168E/G
0.2
MCR08BT1
BT168GW
600
0.02 min - 0.2 max
1
4
600
600
0.07 min - 0.45 max
BT168GWF**
BT148W-R*
0.2
0.2
0.2
0.2
0.05
0.2
0.2
0.2
5
5
15
15
15
400 / 500 / 600
600
BT148-R
BT150S-R
BT258S-LT
500
800
BT150-R
BT258-R
500 / 600 / 800
600
BT258X-R
8
BT258U-R
BT151U-C
800
600
BT258S-R
BT300S-R
BT151S-L
BT151S-R
BTH151S-R
500 / 650
500 / 650 / 800
650
500 / 650 / 800
500 / 1000
400 / 600 / 800
500
BT151-L
BT151-R
BT151X-R
BT151X-C
BT152X-R
12
BT151-C
BT151-RT
BT152-R
BT152-RT
BT145-R
15
32
32
35
BT152B-R
20
25
800
* Large chip / high ITSM
** Hi-Com / fast turn-off
T: high Tjmax 150 °C
Thyristors
ACThyristors
ACThyristorTriacs
types in bold red represent new products
types in bold red italic underline represent products in development
SOT54
(TO92)
SOT223
SO8
SOT186A
SOT428
IT(RMS)
(A)
VDRM
(V)
I
GT (max)
(mA)
IT(RMS)
(A)
VDRM
(V)
I
GT (max)
(mA)
0.2
0.8
600
600
600
D
D
E
ACT102H
2
800
E
ACTT2X
ACTT2S
IGT key:
10 mA
ACT108
ACT108W
E
ACT108
ACT108W
IGT key:
D
E
5 mA
10 mA
High Voltage Power Bipolar Transistors
HighVoltage Power BipolarTransistors for lighting, SMPS and industrial applications
types in bold red represent new products
SOT186A
(isolated
TO220AB)
SOT54
(TO92)
SOT78
(TO220AB)
SOT404
(D2PAK)
SOT428
(DPAK)
25 ºC
ind. tf
(typ) (ns)
IC(DC)
(max) (A)
VCESM (V)
@ IC (A)
hFE (typ)
@ IC (A)
1
1
80
80
1
1
7.5
0.8
0.8
0.75
1
BUJ100LR
PHE13003A
BUJ100
7.5
1
50
1
14
1.5
1.5
4
100
100
30
0.5
0.5
2
9
PHE13003C
PHD13003C*
9
1
12.5
3
BUJ103A
BUJ103AX
BUJ103AD
4
30
2
12.5
3
BUJD103AD*
700
4
100
100
20
2
17
2
PHE13005
PHD13005*
BUJ105A
PHE13005X
4
2
17
2
8
5
11
4
BUJ105AB
BUJ105AD
8
20
5
11
4
BUJD105AD*
8
40
5
9
5
PHE13007
BUJ106A
PHE13009
BUJD203A*
BUJ303A
BUJ302A
BUJ303B
BUJ403A
10
12
4
20
5
11
6
100
30
5
6 min - 30 max
8
850
2
12.5
12
3
BUJD203AX*
BUJ303AX
BUJ302AX
BUJD203AD*
BUJ303AD
BUJ302AD
1000
5
145
520
200
170
2.5
2
3
4
41
0.8
3
1050
5
2.5
2.5
10.5
15.5
1200
6
3
*Integrated freewheeling diode
Package drawings are not to scale
PHx/BUJx series part numbering
Current range:
3 = 1 - 2 Amp
5 = 3 - 4 Amp
7 = 8 Amp
9 = 12 Amp
Family type number
Package indentifier:
= SOT78
A = 1.0 Amp / SOT54
C = 1.5 Amp / SOT54
X = SOT186A
PHE13003Dx
D = Transistor + internal diode
Otherwise: transistor only
BUJx000ADx
Package indentifier:
= SOT78
C = SOT54
X = SOT186A
B = SOT404
D = SOT428
Voltage range: Current range:
1 = 700 V
2 = 850 V
3 = 1000 V
4 = 1200 V
1
= 1 - 2 Amp
2/3 = 4 - 6 Amp
5
6
= 8 Amp
= 10 Amp
brb642
Power Diodes
Hyperfast power diodes
types in bold red italic underline represent products in development
SOD113 (2-pin
SOT186A)
SOD59 (TO220AC)
SOT78 (TO220AB)
SOT404 (D2PAK)
VF (typ) @
150C (V)
trr (typ) @
25C (ns)
VRRM (V)
IF(AV) (A)
@ IF (A)
5
8
8
1.4
1.4
1.4
2
1.4
1.4
1.4
1.4
5
8
8
8
10
5
19
19
19
12.5
19
19
BYC5-600
BYC8-600
BYC8D-600
BYC5X-600
BYC8X-600
BYC8DX-600
BYC58X-600
BYC10X-600
BYC5B-600
BYC8B-600
8
600
10
2 x 5
15
20
BYC10-600
BYC10B-600
BYC10-600CT
15
20
19
19
BYC15-600
BYC20-600
BYC15X-600
BYC20X-600
Power Diodes
Ultrafast power diodes
types in bold red represent new products
SOD113
(2-pin
SOT186A)
SOT186A
(isolated
TO220AB)
SOD59
(TO220AC)
SOT78
(TO220AB)
SOT226
(I2PAK)
SOT404
(D2PAK)
SOT428
(DPAK)
SOT223
VF
(typ) @
150C
(V)
trr
VRRM
(V)
IF(AV)
(A)
@ IF
(A)
(typ)
@ 25C
(ns)
8
2 x 10
2 x 0.75
8
2 x 10
2 x 15
8
0.8
0.72
0.5
8
8
0.5
8
8
15
8
5
14
8
8
15
5
20
20
10
20
20
20
20
15
20
20
20
20
50
50
50
50
50
50
50
50
50
60
50
50
50
17.5
17.5
20
60
BYW29E-100
BYW29E-150
100
150
BYV32E-100
BYV40E-150
0.8
0.72
0.78
0.8
BYV32E-150
BYV42E-150
BYW29E-200
BYV79E-200
BYW29EX-200
BYW29ED-200
BYQ28ED-200
2 x 5
14
0.8
BYQ28E-200
BYQ28X-200
0.83
0.84
0.72
0.78
0.95
0.9
0.87
0.9
0.95
0.9
0.87
0.95
0.97
1.07
0.97
1
0.92
1.1
1.25
1.3
200
2 x 8
2 x 10
2 x 15
2 x 5
9
2 x 10
9
2 x 5
15
2 x 10
2 x 15
5
8
9
BYQ30E-200
BYV32E-200
BYV42E-200
BYT28-300
BYV32G-200
BYV42G-200
BYV32EB-200
BYV42EB-200
300
400
8
10
8
BYV29-400
BYV29-500
BYT79-500
BYV34-400
BYT28-500
BYV29X-500
BYV29B-500
5
500
15
10
15
5
8
8
15
10
5
8
10
8
BYV34-500
BYV44-500
BYV25X-600
BYR29X-600
BYV29X-600
BYT79X-600
BYV25G-600
BYV29G-600
BYV34G-600
BYV25D-600
BYR29-600
BYV29-600
BYT79-600
BYV29B-600
15
2 x 10
5
600
800
BYV34-600
BYV25F-600
BYV29F-600
BYV410-600
BYV34X-600
BYV25F-600
BYV29F-600
BYV25FX-600
BYV29FX-600
BYV25FB-600
BYV29FB-600
BYV25FD-600
BYV29FD-600
9
2 x 10
8
BYV410X-600
1.07
BYR29-800
BYR29X-800
Power Diode part numbering
Process indentifier:
VOID = Normal
V
RRM
F
= Enhanced ultrafast for
Type number
CRM and Interleaved
= Die optimization
= Low leakage
D
P
BYV29FX-600
Technology:
C = CCM PFC
V = DCM PFC or Ultra Fast
T = DCM PFC
Package indentifier:
VOID = TO220AB (SOT78) /
TO220AC (SOD59)
Die number:
2
B
D
G
X
= D PAK (SOT404)
= DPAK (SOT428)
VOID = Single die
2
= Single die
Forward current (IF)
= I2PAK (SOT226)
= ITO220AB (SOT186A) /
ITO220AC (SOD113)
3/4 = Dual die in Common
Cathode
5
= Casco Diode
brb644
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© 2011 NXP Semiconductors N.V.
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Date of release: March 2011
Document order number: 9397 750 17064
Printed in the Netherlands
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