BYD17DTRL13 [NXP]
DIODE 0.6 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode;
| 型号： | BYD17DTRL13 |
| 厂家： | 
NXP |
| 描述： | DIODE 0.6 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode |
| 文件： | 总12页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BYD17 series
General purpose
controlled avalanche rectifiers
Product specification
2001 Oct 26
Supersedes data of 1999 Nov 11
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
FEATURES
• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability
• Shipped in 8 mm embossed tape
• Smallest surface mount rectifier outline.
k
a
olumns
MAM061
DESCRIPTION
(1)
Cavity free cylindrical glass package through Implotec
technology.
This package is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
Fig.1 Simplified outline (SOD87) and symbol.
(1) Implotec is a trademark of Philips.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD17D
−
−
−
−
−
200
400
V
BYD17G
V
V
V
V
BYD17J
600
BYD17K
800
BYD17M
1000
VRWM
crest working reverse voltage
BYD17D
−
−
−
−
−
200
400
V
V
V
V
V
BYD17G
BYD17J
600
BYD17K
800
BYD17M
1000
VR
continuous reverse voltage
BYD17D
−
−
−
−
−
200
400
V
V
V
V
V
BYD17G
BYD17J
600
BYD17K
800
BYD17M
1000
2001 Oct 26
2
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
SYMBOL
PARAMETER
CONDITIONS
Ttp = 105 °C;
MIN.
MAX.
UNIT
IF(AV)
average forward current
−
1.5 A
averaged over any 20 ms period;
see Figs 2 and 4
Tamb = 65 °C; PCB mounting (see
−
0.6
A
Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
−
20
7
A
ERSM
non-repetitive peak reverse avalanche L = 120 mH; Tj = Tj max prior to
mJ
energy
surge; inductive load switched off
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
see Fig.5
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
0.93
1.05
UNIT
VF
forward voltage
IF = 1 A; Tj = Tj max; see Fig.6
IF = 1 A; see Fig.6
IR = 0.1 mA
−
−
−
−
V
V
V(BR)R
reverse avalanche
breakdown voltage
BYD17D
BYD17G
225
450
650
900
1100
−
−
−
−
−
−
−
−
3
−
−
V
V
BYD17J
−
V
BYD17K
−
V
BYD17M
−
V
IR
reverse current
VR = VRRMmax; see Fig.7
1
µA
µA
µs
VR = VRRMmax; Tj = 165 °C; see Fig.7
−
100
−
trr
reverse recovery time when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.10
−
Cd
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.8
−
21
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
30
K/W
K/W
note 1
150
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the “General Part of associated Handbook”.
2001 Oct 26
3
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
GRAPHICAL DATA
MSC293
MBH394
1.0
3
handbook, halfpage
I
F(AV)
(A)
I
F(AV)
(A)
0.8
0.6
0.4
0.2
0
2
1
0
0
0
40
80
120
160
T
200
(°C)
40
80
120
160
200
(°C)
amb
T
tp
a = 1.57; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.9.
a = 1.57; VR = VRRMmax; δ = 0.5.
Fig.2 Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
MBH395
MGC736
2.5
P
(W)
200
handbook, halfpage
handbook, halfpage
T
j
o
2
1.57 1.42
a = 3 2.5
( C)
2.0
1.5
1.0
0.5
0
150
100
D
G
J
K
M
50
0
0
0.4
0.8
1.2
1.6
(A)
0
400
800
1200
(V)
I
F(AV)
V
, V
R
RRM
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
2001 Oct 26
4
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
MBG048
MGC739
3
6
10
handbook, halfpage
handbook, halfpage
I
I
F
R
(A)
(µA)
2
4
10
10
2
0
0
1
0
1
2
40
80
120
160
T ( C)
200
V
(V)
F
o
j
Solid line: Tj = 25 °C.
VR = VRRMmax.
Dotted line: Tj = 175 °C.
Fig.6 Forward current as a function of forward
voltage; maximum values.
Fig.7 Reverse current as a function of junction
temperature; maximum values.
MGC740
2
10
handbook, halfpage
50
C
d
(pF)
4.5
10
50
2.5
1
1.25
MSB213
3
2
1
10
10
10
V
(V)
R
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Printed-circuit board for surface mounting.
2001 Oct 26
5
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.10 Test circuit and reverse recovery time waveform and definition.
2001 Oct 26
6
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors
SOD87
k
a
(2)
D
D
1
L
L
H
DIMENSIONS (mm are the original dimensions)
D1
L
D
H
UNIT
0
1
2 mm
scale
2.1
2.0
2.0
1.8
3.7
3.3
mm
0.3
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
99-03-31
99-06-04
SOD87
100H03
2001 Oct 26
7
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Oct 26
8
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
NOTES
2001 Oct 26
9
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
NOTES
2001 Oct 26
10
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
NOTES
2001 Oct 26
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613510/04/pp12
Date of release: 2001 Oct 26
Document order number: 9397 750 08864
相关型号：
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DIODE 0.6 A, 400 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SO-2, Signal Diode
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