BYD53D [NXP]
Fast soft-recovery controlled avalanche rectifiers; 快速软恢复控制雪崩整流器
| 型号： | BYD53D |
| 厂家： | 
NXP |
| 描述： | Fast soft-recovery controlled avalanche rectifiers |
| 文件： | 总12页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BYD53 series
Fast soft-recovery controlled
avalanche rectifiers
1998 Dec 04
Product specification
Supersedes data of 1996 Sep 18
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
FEATURES
DESCRIPTION
• Glass passivated
Cavity free cylindrical glass SOD81
package through Implotec
technology. The SOD81 package is
(1)
• High maximum operating
temperature
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
k
a
handbook, 4 columns
absorption capability
MAM123
• Available in ammo-pack.
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD53D
−
−
−
−
−
−
−
200
400
V
V
V
V
V
V
V
BYD53G
BYD53J
600
BYD53K
800
BYD53M
1000
1200
1400
BYD53U
BYD53V
VR
continuous reverse voltage
BYD53D
−
−
−
−
−
−
−
200
400
V
V
V
V
V
V
V
BYD53G
BYD53J
600
BYD53K
800
BYD53M
1000
1200
1400
BYD53U
BYD53V
IF(AV)
IF(AV)
IFRM
average forward current
BYD53D to M
BYD53U and V
Ttp = 55 °C; lead length = 10 mm
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
0.75
0.85
A
A
average forward current
BYD53D to M
Tamb = 65 °C; PCB mounting (see
Fig.17); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
0.40
0.45
A
A
BYD53U and V
repetitive peak forward current
BYD53D to M
Ttp = 55 °C; see Figs 6 and 7
−
−
6.5
A
A
BYD53U and V
8.25
1998 Dec 04
2
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IFRM
repetitive peak forward current
BYD53D to M
Tamb = 65 °C; see Figs 8 and 9
−
−
−
3.6
4.45
5
A
A
A
BYD53U and V
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
−
10
mJ
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
see Fig.12
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
IF = 1 A; Tj = Tj max
;
see Figs 13 and 14
BYD53D to M
BYD53U and V
forward voltage
BYD53D to M
BYD53U and V
−
−
−
−
2.1
1.7
V
V
VF
IF = 1 A; see Figs 13 and 14
IR = 0.1 mA
−
−
−
−
3.6
2.3
V
V
V(BR)R
reverse avalanche
breakdown voltage
BYD53D
BYD53G
300
500
700
900
1100
1300
1500
−
−
−
−
−
−
−
−
−
−
−
−
V
V
BYD53J
−
V
BYD53K
−
V
BYD53M
BYD53U
−
V
−
V
BYD53V
−
V
IR
reverse current
VR = VRRMmax; see Fig.15
1
µA
µA
VR = VRRMmax; Tj = 165 °C;
−
100
see Fig.15
trr
reverse recovery time
BYD53D to J
when switched from IF = 0.5 A
to IR = 1 A; measured at
IR = 0.25 A; see Fig.18
−
−
−
−
−
−
30
75
ns
ns
ns
pF
BYD53K and M
BYD53U and V
diode capacitance
−
150
−
Cd
f = 1 MHz; VR = 0; see Fig.16
20
1998 Dec 04
3
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1 A/µs;
see Fig.19
maximum slope of reverse
recovery current
dIR
--------
dt
BYD53D to J
−
−
−
−
−
−
7
6
5
A/µs
BYD53K and M
BYD53U and V
A/µs
A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
60
K/W
K/W
120
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.17.
For more information please refer to the ‘General Part of associated Handbook’.
1998 Dec 04
4
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
GRAPHICAL DATA
MGM267
MLC303
1.0
1.6
handbook, halfpage
handbook, halfpage
I
F(AV)
(A)
I
F(AV)
(A)
0.8
1.2
0.6
0.4
0.2
lead length 10 mm
0.8
0.4
0
0
0
0
o
40
80
120
160
T
200
(°C)
100
200
T
( C)
tp
tp
BYD53U and V
BYD53D to M
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MGM266
MLC304
0.8
0.6
handbook, halfpage
handbook, halfpage
I
F(AV)
(A)
I
F(AV)
(A)
0.6
0.4
0.4
0.2
0
0.2
0
0
100
200
0
40
80
120
160
T
200
(°C)
o
T
( C)
amb
amb
BYD53U and V
BYD53D to M
a = 1.42; VR = VRRMmax; δ = 0.5.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig. 17.
Switched mode application.
Device mounted as shown in Fig. 17.
Switched mode application.
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.4 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1998 Dec 04
5
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
MGM269
8
I
FRM
(A)
δ = 0.05
6
0.1
4
0.2
2
0.5
1
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYD53D to M
Ttp = 55°C; Rth j-tp = 60 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MLC307
10
I
FRM
(A)
8
δ = 0.05
6
4
2
0.1
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYD53U and V
Ttp = 55°C; Rth j-tp = 60 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1998 Dec 04
6
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
MGM268
4
I
FRM
(A)
δ = 0.05
3
0.1
0.2
2
1
0.5
1
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYD53D to M
Tamb = 65 °C; Rth j-a = 120 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MLC308
5
I
FRM
(A)
4
δ = 0.05
3
2
1
0.1
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYD53U and V
Tamb = 65 °C; Rth j-a = 120 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1998 Dec 04
7
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
MGM265
MLC302
4
3
handbook, halfpage
handbook, halfpage
P
(W)
P
(W)
a = 3 2.5
2
1.57
1.42
3
2
1
a = 3 2.5
2
1.57
2
1
1.42
0
0
0
0
0.2
0.4
0.6
0.8
1.0
(A)
0.5
1.0
I
(A)
F(AV)
I
F(AV)
BYD53D to M
BYD53U and V
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
MBK457
MGM264
200
6
handbook, halfpage
handbook, halfpage
I
F
(A)
T
j
o
( C)
4
100
2
0
U
V
D
G
J
K
M
0
0
1000
2000
0
2
4
6
8
10
V
(V)
R
V
(V)
F
BYD53D to M
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.12 Maximum permissible junction temperature
as a function of reverse voltage.
Fig.13 Forward current as a function of forward
voltage; maximum values.
1998 Dec 04
8
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
MLC301
MGA853
3
6
10
handbook, halfpage
handbook, halfpage
I
I
F
R
(A)
(µA)
2
4
10
10
2
0
0
1
0
1
2
3
4
5
100
200
o
( C)
T
V
(V)
j
F
BYD53U and V
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
VR = VRRMmax
.
Fig.14 Forward current as a function of forward
voltage; maximum values.
Fig.15 Reverse current as a function of junction
temperature; maximum values.
MLC305
2
10
handbook, halfpage
50
handbook, halfpage
25
C
d
(pF)
7
50
10
2
3
1
2
3
1
10
10
10
MGA200
V
(V)
R
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.16 Diode capacitance as a function of reverse
voltage; typical values.
Fig.17 Device mounted on a printed-circuit board.
1998 Dec 04
9
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
DUT
I
F
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.18 Test circuit and reverse recovery time waveform and definition.
I
ndbook, halfpage
F
dI
F
dt
t
rr
t
10%
dI
R
dt
100%
I
R
MGC499
Fig.19 Reverse recovery definitions.
1998 Dec 04
10
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
PACKAGE OUTLINE
Hermetically sealed glass package;
ImplotecTM(1) technology; axial leaded; 2 leads
SOD81
G
1
(2)
k
a
b
D
L
L
G
DIMENSIONS (mm are the original dimensions)
G
D
max.
G
max.
L
min.
b
max.
1
UNIT
0
1
2 mm
max.
scale
mm
0.81
2.15
3.8
5
28
Notes
1. Implotec is a trademark of Philips.
2. The marking band indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-06-20
SOD81
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Dec 04
11
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© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135106/00/04/pp12
Date of release: 1998 Dec 04
Document order number: 9397 750 04887
相关型号：
BYD53VT/R
DIODE 0.45 A, 1400 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
NXP
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