BYD57D [NXP]
Ultra-fast soft-recovery controlled avalanche rectifiers; 超快速软恢复控制雪崩整流器
| 型号： | BYD57D |
| 厂家： | 
NXP |
| 描述： | Ultra-fast soft-recovery controlled avalanche rectifiers |
| 文件： | 总12页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BYD57 series
Ultra-fast soft-recovery
controlled avalanche rectifiers
Product specification
1999 Nov 11
Supersedes data of 1998 Dec 04
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
FEATURES
DESCRIPTION
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
• Glass passivated
Cavity free cylindrical glass SOD87
package through Implotec
technology. The SOD87 is
(1)
• High maximum operating
temperature
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
k
a
handbook, 4 columns
• Shipped in 8 mm embossed tape
MAM061
• Smallest surface mount rectifier
outline.
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD57D
−
−
−
−
−
−
−
200
400
V
V
V
V
V
V
V
BYD57G
BYD57J
600
BYD57K
800
BYD57M
1000
1200
1400
BYD57U
BYD57V
VR
continuous reverse voltage
BYD57D
−
−
−
−
−
−
−
200
400
V
V
V
V
V
V
V
BYD57G
BYD57J
600
BYD57K
800
BYD57M
1000
1200
1400
BYD57U
BYD57V
IF(AV)
average forward current
BYD57D to M
BYD57U and V
average forward current
BYD57D to M
BYD57U and V
Ttp = 85 °C; see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
1.0
1.2
A
A
IF(AV)
Tamb = 60 °C; PCB mounting (see
Fig.17); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
0.4
0.4
A
A
IFRM
repetitive peak forward current
BYD57D to M
Ttp = 85 °C; see Figs 6 and 7
−
−
8.5
11
A
A
BYD57U and V
1999 Nov 11
2
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IFRM
repetitive peak forward current
BYD57D to M
Tamb = 60 °C; see Figs 8 and 9
−
−
−
3.0
3.7
5.0
A
A
A
BYD57U and V
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave; Tj = 25 °C
prior to surge; VR = VRRMmax
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
−
10 mJ
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
see Fig.12
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 1 A; Tj = Tj max
MIN.
TYP.
MAX.
UNIT
VF
;
see Figs 13 and 14
BYD57D to M
BYD57U and V
forward voltage
BYD57D to M
BYD57U and V
−
−
−
−
2.1
1.7
V
V
VF
IF = 1 A;
see Figs 13 and 14
−
−
−
−
3.6
2.3
V
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD57D
BYD57G
300
500
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5
V
V
BYD57J
700
V
BYD57K
900
V
BYD57M
BYD57U
1100
1300
1500
−
V
V
BYD57V
V
IR
reverse current
VR = VRRMmax
see Fig.15
;
;
µA
VR = VRRMmax
−
−
100
µA
Tj = 165 °C; see Fig.15
trr
reverse recovery time
BYD57D to J
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig.18
−
−
−
−
−
−
30
75
ns
ns
ns
pF
BYD57K and M
BYD57U and V
diode capacitance
−
150
−
Cd
f = 1 MHz; VR = 0;
see Fig.16
20
1999 Nov 11
3
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
maximum slope of reverse recovery when switched from
dIR
--------
dt
current
BYD57D to J
IF = 1 A to VR ≥ 30 V and
dIF/dt = −1 A/µs;
see Fig.19
−
−
−
−
−
−
7
6
5
A/µs
BYD57K and M
BYD57U and V
A/µs
A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
30
K/W
K/W
note 1
150
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.17.
For more information please refer to the ‘General Part of associated Handbook’.
1999 Nov 11
4
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
GRAPHICAL DATA
MSA961
MGM273
2.0
2.0
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
1.6
1.6
1.2
0.8
0.4
0
1.2
0.8
0.4
0
0
0
40
80
120
160
200
40
80
120
160
200
(°C)
tp
o
T
T
( C)
tp
BYD57D to M
BYDU and V
a = 1.42; VR = VRRMmax; δ = 0.5.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MSA960
MGM272
0.5
0.6
handbook, halfpage
I
F(AV)
(A)
I
F(AV)
(A)
0.4
0.4
0.3
0.2
0.1
0
0.2
0
0
40
80
120
160
200
0
40
80
120
160
T
200
(°C)
o
T
( C)
amb
amb
BYD57D to M
BYD57U and V
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.17.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.17.
Switched mode application.
Fig.4 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1999 Nov 11
5
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
MSA964
10
I
FRM
δ = 0.05
(A)
8
6
4
2
0.1
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYD57D to M
Ttp = 85 °C; Rth j-tp = 30 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGM275
16
I
FRM
(A)
12
δ = 0.05
8
4
0.1
0.2
0.5
1
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYD57U and V
Ttp = 85 °C; Rth j-tp = 30 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 11
6
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
MSA965
4
I
FRM
(A)
δ = 0.05
3
0.1
2
0.2
1
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYD57D to M
Tamb = 60 °C; Rth j-a = 150K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGM274
4
δ = 0.05
I
FRM
(A)
3
0.1
0.2
2
1
0.5
1
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYD57U and V
Tamb = 60 °C; Rth j-a = 150K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 11
7
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
MGC525
MGM271
5
3
handbook, halfpage
handbook, halfpage
P
(W)
P
(W)
a=3 2.5
2
1.57 1.42
a = 3 2.5 2 1.57
1.42
4
3
2
1
2
1
0
0
0
0
0.4
0.8
1.2
1.6
2
(A)
0.5
1.0
I
(A)
F(AV)
I
F(AV)
BYD57D to M
BYD57U and V
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
MBK457
MSA963
4
200
handbook, halfpage
handbook, halfpage
I
F
(A)
T
j
3
o
( C)
2
1
100
U
V
D
G
J
K
M
0
0
1000
2000
0
2
4
6
8
V
(V)
V
(V)
R
F
BYD57D to M
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.12 Maximum permissible junction temperature
as a function of reverse voltage.
Fig.13 Forward current as a function of forward
voltage; maximum values.
1999 Nov 11
8
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
MGC532
MGM270
3
4
10
handbook, halfpage
handbook, halfpage
I
F
I
R
(A)
(µA)
3
2
10
2
1
0
10
1
0
0
1
2
3
4
100
200
V
(V)
o
F
T ( C)
j
BYD57U and V
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
VR = VRRMmax
.
Fig.14 Forward current as a function of forward
voltage; maximum values.
Fig.15 Reverse current as a function of junction
temperature; maximum values.
MGC524
2
10
handbook, halfpage
50
C
d
(pF)
4.5
10
50
2.5
1
1.25
MSB213
3
2
1
10
10
10
V
(V)
R
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.16 Diode capacitance as a function of reverse
voltage; typical values.
Fig.17 Printed-circuit board for surface mounting.
1999 Nov 11
9
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.18 Test circuit and reverse recovery time waveform and definition.
I
ndbook, halfpage
F
dI
F
dt
t
rr
t
10%
dI
R
dt
100%
I
R
MGC499
Fig.19 Reverse recovery definitions.
1999 Nov 11
10
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors
SOD87
k
a
(2)
D
D
1
L
L
H
DIMENSIONS (mm are the original dimensions)
D1
L
D
H
UNIT
0
1
2 mm
scale
2.1
2.0
2.0
1.8
3.7
3.3
mm
0.3
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
99-03-31
99-06-04
SOD87
100H03
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Nov 11
11
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68
SCA
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135002/04/pp12
Date of release: 1999 Nov 11
Document order number: 9397 750 06267
相关型号：
BYD57G,135
DIODE 0.4 A, 400 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SOD-87, 2 PIN, Signal Diode
NXP
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