BYD67/T3 [NXP]
DIODE 0.4 A, 300 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode;
| 型号： | BYD67/T3 |
| 厂家： | 
NXP |
| 描述： | DIODE 0.4 A, 300 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode 局域网 二极管 |
| 文件： | 总9页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BYD67
Ripple blocking diode
Product specification
2004 Jun 16
Supersedes data of 2003 Mar 14
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
FEATURES
• Glass passivated
• High maximum operating temperature
• Low leakage current
k
a
olumns
• Excellent stability
• Guaranteed avalanche energy absorption capability
• Shipped in 8 mm embossed tape
• Smallest surface mount rectifier package.
MAM061
Fig.1 Simplified outline (SOD87) and symbol.
DESCRIPTION
Cavity free cylindrical glass SOD87 package through
Implotec (1) technology.
The SOD87 is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
ORDERING INFORMATION
PACKAGE
DESCRIPTION
TYPE NUMBER
NAME
VERSION
BYD67
−
hermetically sealed glass surface mounted package;
Implotec technology; 2 connectors
SOD87
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VRRM
VR
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
average forward current
CONDITIONS
MIN.
MAX.
UNIT
−
−
−
300
300
1.2
V
V
A
IF(AV)
Ttp = 85 °C; see Fig.2;
averaged over any 20 ms period;
see also Fig.4
Tamb = 60 °C; PCB mounting (see
Fig.8); see Fig.3;
−
0.4
A
averaged over any 20 ms period;
see also Fig.4
IFRM
repetitive peak forward current
Ttp = 85 °C
−
−
−
11
3.7
5
A
A
A
Tamb = 60 °C
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave; Tj = 25 °C
prior to surge; VR = VRRMmax
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
2004 Jun 16
2
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
1.7
UNIT
VF
IF = 1 A; Tj = Tj(max); see Fig.5
IF = 1 A; see Fig.5
−
−
−
−
−
−
−
−
V
V
2.3
1
IR
reverse current
VR = VRRMmax; see Fig.6
µA
µA
VR = VRRMmax; Tj = 165 °C;
100
see Fig.6
tfr
forward recovery time
turn-on time
when switched to IF = 1 A
in 50 ns; see Fig.9
−
−
−
350
ns
ns
ton
when switched from
500
−
VF = 0 V to VF = 3 V; measured
between 10 % and 90 % of
IFmax; see Fig.10
trr
reverse recovery time
diode capacitance
when switched from IF = 0.5 A to
IR = 1 A; measured at
IR = 0.25 A; see Fig.11
−
−
−
150
ns
Cd
f = 1 MHz; VR = 0 V; see Fig.7
17
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-tp)
Rth(j-a)
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
30
K/W
K/W
note 1
150
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8.
For more information please refer to the ‘General Part of associated Handbook.
2004 Jun 16
3
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
GRAPHICAL DATA
MGM272
MGM273
0.6
2.0
handbook, halfpage
handbook, halfpage
I
F(AV)
I
F(AV)
(A)
(A)
1.6
0.4
1.2
0.8
0.4
0
0.2
0
0
40
80
120
160
T
200
(°C)
0
40
80
120
160
200
(°C)
T
amb
tp
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in 4.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
MGM271
MLC301
6
5
handbook, halfpage
handbook, halfpage
P
(W)
I
F
(A)
a = 3 2.5 2 1.57
4
1.42
4
3
2
1
0
2
0
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
I
2
(A)
V
(V)
F
F(AV)
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Fig.5 Forward current as a function of forward
voltage; maximum values.
2004 Jun 16
4
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
MLC305
MGA853
3
10
2
10
handbook, halfpage
handbook, halfpage
I
R
(µA)
C
d
(pF)
2
10
10
10
1
1
2
3
0
100
1
10
200
o
( C)
10
10
V
(V)
R
T
j
VR = VRRMmax
.
f = 1 MHz; Tj = 25 °C.
Fig.6 Reverse current as a function of junction
temperature; maximum values.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
MGD600
handbook, halfpage
V
F
50
90%
100%
4.5
t
t
fr
50
I
F
2.5
10%
1.25
MSB213
t
Dimensions in mm.
Fig.8 Printed-circuit board for surface mounting.
Fig.9 Forward recovery time definition.
2004 Jun 16
5
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
3V
F
V
DUT
(V)
0
50 Ω
10 Ω
100%
90%
I
F
(A)
10%
0
t
on
MBH530
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 10 ns.
Fig.10 Test circuit and turn-on time waveform and definition.
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.11 Test circuit and reverse recovery time waveform and definition.
6
2004 Jun 16
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors
SOD87
k
a
(2)
D
D
1
L
L
H
DIMENSIONS (mm are the original dimensions)
D1
L
D
H
UNIT
0
1
2 mm
scale
2.1
2.0
2.0
1.8
3.7
3.3
mm
0.3
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
99-03-31
99-06-04
SOD87
100H03
2004 Jun 16
7
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Jun 16
8
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R72/04/pp9
Date of release: 2004 Jun 16
Document order number: 9397 750 13373
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