BYD73CAMO [NXP]
SILICON, RECTIFIER DIODE;
| 型号： | BYD73CAMO |
| 厂家： | 
NXP |
| 描述： | SILICON, RECTIFIER DIODE |
| 文件： | 总11页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
BYD73 series
Ultra fast low-loss
controlled avalanche rectifiers
1996 Sep 18
Product specification
Supersedes data of 1996 May 24
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
FEATURES
DESCRIPTION
• Glass passivated
Cavity free cylindrical glass SOD81
package through Implotec
technology. This package is
(1)
• High maximum operating
temperature
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
k
a
handbook, 4 columns
MAM123
• Available in ammo-pack.
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD73A
−
−
−
−
−
−
−
50
100
150
200
250
300
400
V
V
V
V
V
V
V
BYD73B
BYD73C
BYD73D
BYD73E
BYD73F
BYD73G
VR
continuous reverse voltage
BYD73A
−
−
−
−
−
−
−
50
100
150
200
250
300
400
V
V
V
V
V
V
V
BYD73B
BYD73C
BYD73D
BYD73E
BYD73F
BYD73G
IF(AV)
average forward current
BYD73A to D
BYD73E to G
Ttp = 55 °C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
1.75
1.70
A
A
IF(AV)
average forward current
BYD73A to D
Tamb = 60 °C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
1.00
0.95
A
A
BYD73E to G
1996 Sep 18
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IFRM
repetitive peak forward current
BYD73A to D
Ttp = 55 °C; see Figs 6 and 7
−
−
14
15
A
A
BYD73E to G
IFRM
repetitive peak forward current
BYD73A to D
Tamb = 60 °C; see Figs 8 and 9
−
−
−
8.5
9.5
25
A
A
A
BYD73E to G
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
−
10 mJ
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 1 A; Tj = Tj max
MIN.
TYP.
MAX.
UNIT
VF
;
see Figs 12 and 13
BYD73A to D
BYD73E to G
forward voltage
BYD73A to D
BYD73E to G
−
−
−
−
0.75
0.83
V
V
VF
IF = 1 A;
see Figs 12 and 13
−
−
−
−
0.98
1.05
V
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD73A
BYD73B
55
110
165
220
275
330
440
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1
V
V
BYD73C
V
BYD73D
V
BYD73E
V
BYD73F
V
BYD73G
V
IR
reverse current
VR = VRRMmax
see Fig.14
;
;
µA
VR = VRRMmax
−
−
100
µA
Tj = 165 °C; see Fig.14
trr
reverse recovery time
BYD73A to D
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig.18
−
−
−
−
25
50
ns
ns
BYD73E to G
1996 Sep 18
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
SYMBOL
PARAMETER
diode capacitance
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Cd
f = 1 MHz; VR = 0 V;
see Fig.15
BYD73A to D
BYD73E to G
−
−
50
40
−
−
pF
pF
when switched from
IF = 1 A to VR ≥ 30 V
and dIF/dt = −1 A/µs;
see Fig.17
maximum slope of reverse recovery
current
dIR
--------
dt
BYD73A to D
BYD73E to G
−
−
−
−
4
5
A/µs
A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
60
K/W
K/W
120
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 18
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
GRAPHICAL DATA
MGC535
MGC536
handbook, halfpage
2.0
handbook, halfpage
2.0
I
I
F(AV)
F(AV)
(A)
1.6
(A)
1.6
lead length 10 mm
lead length 10 mm
1.2
0.8
1.2
0.8
0.4
0.4
0
0
0
0
100
200
100
200
o
o
T
( C)
T
( C)
tp
tp
BYD73A to D
BYD73E to G
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MGC537
MGC538
1.6
1.6
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
1.2
1.2
0.8
0.4
0
0.8
0.4
0
0
100
200
0
100
200
o
o
T
( C)
T
( C)
amb
amb
BYD73A to D
BYD73E to G
a = 1.42; VR = VRRMmax; δ = 0.5.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
Device mounted as shown in Fig.16.
Switched mode application.
Fig.4 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1996 Sep 18
5
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
MCD605
16
δ =
0.05
I
FRM
(A)
0.1
0.2
8
0.5
1
0
−2
−1
2
3
4
10
10
1
10
10
10
10
t
(ms)
p
BYD73A to D
Ttp = 55 °C; Rth j-tp = 60 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD607
16
δ =
0.05
I
FRM
(A)
0.1
0.2
8
0.5
1
0
10
-2
-1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYD73E to G
Ttp = 55°C; Rth j-tp = 60 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
MCD604
10
δ =
0.05
I
FRM
(A)
0.1
5
0.2
0.5
1
0
10
-2
-1
2
3
4
10
10
10
10
1
10
t
(ms)
p
BYD73A to D
Tamb = 60 °C; Rth j-a = 120 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD606
10
δ =
0.05
I
FRM
(A)
0.1
0.2
5
0.5
1
0
10
-2
-1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYD73E to G
Tamb = 60 °C; Rth j-a = 120 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18
7
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
MGC539
MGC540
2
2
handbook, halfpage
handbook, halfpage
a=3 2.5
1.42
2 1.57
a=3 2.5 2 1.57 1.42
P
(W)
P
(W)
1
1
0
0
0
0
1
2
1
2
I
(A)
I
(A)
F(AV)
F(AV)
BYD73A to D
BYD73E to G
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
MCD594
MGC531
10
10
handbook, halfpage
handbook, halfpage
I
I
F
F
(A)
(A)
8
6
4
2
0
8
6
4
2
0
0
1
2
0
1
2
3
V
(V)
V
(V)
F
F
BYD73A to D
BYD73E to G
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.12 Forward current as a function of forward
voltage; maximum values.
Fig.13 Forward current as a function of forward
voltage; maximum values.
1996 Sep 18
8
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
MCD608
MGA853
2
3
10
10
handbook, halfpage
handbook, halfpage
I
R
(µA)
C
d
(pF)
2
10
10
A, B, C, D
E, F, G
10
1
1
2
3
0
100
200
o
( C)
1
10
10
10
T
j
V
(V)
R
VR = VRRMmax
.
f = 1 MHz; Tj = 25 °C.
Fig.14 Reverse current as a function of junction
temperature; maximum values.
Fig.15 Diode capacitance as a function of reverse
voltage; typical values.
50
handbook, halfpage
25
I
ndbook, halfpage
F
dI
F
dt
7
t
50
rr
t
10%
dI
R
dt
100%
2
I
R
MGC499
3
MGA200
Dimensions in mm.
Fig.16 Device mounted on a printed-circuit board.
Fig.17 Reverse recovery definitions.
1996 Sep 18
9
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.18 Test circuit and reverse recovery time waveform and definition.
1996 Sep 18
10
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
PACKAGE OUTLINE
5 max
0.81
max
2.15
max
MBC051
28 min
3.8 max
28 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.19 SOD81.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 18
11
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