BYD77G [NXP]
Ultra fast low-loss controlled avalanche rectifiers; 超快速控制低损耗雪崩整流器
| 型号： | BYD77G |
| 厂家： | 
NXP |
| 描述： | Ultra fast low-loss controlled avalanche rectifiers |
| 文件： | 总12页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BYD77 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
1999 Nov 15
Supersedes data of 1996 May 24
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
FEATURES
DESCRIPTION
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
• Glass passivated
Cavity free cylindrical glass SOD87
package through Implotec
technology. This package is
(1)
• High maximum operating
temperature
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
k
a
handbook, 4 columns
• Shipped in 8 mm embossed tape
MAM061
• Smallest surface mount
rectifier outline.
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD77A
−
−
−
−
−
−
−
50
100
150
200
250
300
400
V
V
V
V
V
V
V
BYD77B
BYD77C
BYD77D
BYD77E
BYD77F
BYD77G
VR
continuous reverse voltage
BYD77A
−
−
−
−
−
−
−
50
100
150
200
250
300
400
V
V
V
V
V
V
V
BYD77B
BYD77C
BYD77D
BYD77E
BYD77F
BYD77G
IF(AV)
average forward current
BYD77A to D
BYD77E to G
average forward current
BYD77A to D
BYD77E to G
Ttp = 105 °C; see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
2.00
1.85
A
A
IF(AV)
Tamb = 60 °C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
0.85
0.80
A
A
1999 Nov 15
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IFRM
repetitive peak forward current
BYD77A to D
Ttp = 105 °C; see Figs 6 and 7
−
−
15
13
A
A
BYD77E to G
IFRM
repetitive peak forward current
BYD77A to D
Tamb = 60 °C; see Figs 8 and 9
−
−
−
8.5
8.0
25
A
A
A
BYD77E to G
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave; Tj = Tj max
prior to surge; VR = VRRMmax
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = 25 °C prior to
surge; inductive load switched off
−
10 mJ
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 1 A; Tj = Tj max
MIN.
TYP.
MAX.
UNIT
VF
;
see Figs 12 and 13
BYD77A to D
BYD77E to G
forward voltage
BYD77A to D
BYD77E to G
−
−
−
−
0.75
0.83
V
V
VF
IF = 1 A;
see Figs 12 and 13
−
−
−
−
0.98
1.05
V
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD77A
BYD77B
55
110
165
220
275
330
440
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1
V
V
BYD77C
V
BYD77D
V
BYD77E
V
BYD77F
V
BYD77G
reverse current
V
IR
VR = VRRMmax
see Fig.14
;
;
µA
VR = VRRMmax
−
−
100
µA
Tj = 165 °C; see Fig.14
trr
reverse recovery time
BYD77A to D
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig.18
−
−
−
−
25
50
ns
ns
BYD77E to G
1999 Nov 15
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
SYMBOL
PARAMETER
diode capacitance
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Cd
f = 1 MHz; VR = 0 V;
see Fig.15
BYD77A to D
BYD77E to G
−
−
50
40
−
−
pF
pF
maximum slope of reverse recovery when switched from
dIR
--------
dt
current
BYD77A to D
BYD77E to G
IF = 1 A to VR ≥ 30 V and
dIF/dt = −1 A/µs;
see Fig.17
−
−
−
−
4
5
A/µs
A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
30
K/W
K/W
note 1
150
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.
For more information please refer to the “General Part of associated Handbook”.
1999 Nov 15
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
GRAPHICAL DATA
MCD598
MCD596
3
4
handbook, halfpage
handbook, halfpage
I
F(AV)
I
F(AV)
(A)
(A)
3
2
2
1
1
0
0
0
0
100
200
o
100
200
o
T
( C)
T
( C)
tp
tp
BYD77A to D
BYD77E to G
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MCD595
MCD597
1.0
1.2
handbook, halfpage
handbook, halfpage
I
F(AV)
(A)
I
F(AV)
(A)
0.8
0.5
0.4
0
0
0
100
200
0
100
200
o
( C)
o
( C)
T
T
amb
amb
BYD77A to D
BYD77E to G
a = 1.42; VR = VRRMmax; δ = 0.5.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
Device mounted as shown in Fig.16.
Switched mode application.
Fig.4 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1999 Nov 15
5
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
MCD593
20
δ =
0.05
I
FRM
(
)
A
0.1
0.2
10
0.5
1
0
10
0
1
-2
-1
2
3
4
10
10
10
10
10
10
(
)
t
ms
p
BYD77A to D
Ttp = 105 °C; Rth j-tp = 30 K/W.
RRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
V
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD591
20
I
δ =
0.05
FRM
(
)
A
0.1
0.2
10
0.5
1
0
10
0
1
-2
-1
2
3
4
10
10
10
10
10
10
(
)
t
ms
p
BYD77E to G
Ttp = 105°C; Rth j-tp = 30 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 15
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
MCD592
10
I
FRM
δ =
0.05
(
)
A
0.1
0.2
5
0.5
1
0
10
0
1
-2
-1
2
3
4
10
10
10
10
10
10
(
)
t
ms
p
BYD77A to D
Tamb = 60 °C; Rth j-a = 150 K/W.
RRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
V
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD590
10
I
FRM
(
)
A
δ =
0.05
0.1
0.2
5
0.5
1
0
10
0
1
-2
-1
2
3
4
10
10
10
10
10
10
(
)
t
ms
p
BYD77E to G
Tamb = 60 °C; Rth j-a = 150 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 15
7
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
MGC530
MGC529
2
2
handbook, halfpage
handbook, halfpage
a=3 2.5
2
1.57 1.42
a=3 2.5 2 1.57 1.42
P
(W)
P
(W)
1
1
0
0
0
0
1
2
1
2
I
(A)
I
(A)
F(AV)
F(AV)
BYD77A to D
BYD77E to G
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
MCD594
MGC531
10
10
handbook, halfpage
handbook, halfpage
I
I
F
F
(A)
(A)
8
6
4
2
0
8
6
4
2
0
0
1
2
0
1
2
3
V
(V)
V
(V)
F
F
BYD77A to D
BYD77E to G
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.12 Forward current as a function of forward
voltage; maximum values.
Fig.13 Forward current as a function of forward
voltage; maximum values.
1999 Nov 15
8
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
MGA853
MCD608
2
3
10
10
handbook, halfpage
handbook, halfpage
I
R
(µA)
C
d
(pF)
2
10
10
A, B, C, D
E, F, G
10
1
1
2
3
0
100
200
o
( C)
1
10
10
10
T
j
V
(V)
R
VR = VRRMmax
.
f = 1 MHz; Tj = 25 °C.
Fig.14 Reverse current as a function of junction
temperature; maximum values.
Fig.15 Diode capacitance as a function of reverse
voltage; typical values.
50
I
ndbook, halfpage
F
dI
F
dt
t
rr
4.5
t
10%
50
dI
R
dt
2.5
100%
I
R
MGC499
1.25
MSB213
Dimensions in mm.
Fig.16 Printed-circuit board for surface mounting.
Fig.17 Reverse recovery definitions.
1999 Nov 15
9
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.18 Test circuit and reverse recovery time waveform and definition.
1999 Nov 15
10
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors
SOD87
k
a
(2)
D
D
1
L
L
H
DIMENSIONS (mm are the original dimensions)
D1
L
D
H
UNIT
0
1
2 mm
scale
2.1
2.0
2.0
1.8
3.7
3.3
mm
0.3
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
99-03-31
99-06-04
SOD87
100H03
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Nov 15
11
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68
SCA
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135002/03/pp12
Date of release: 1999 Nov 15
Document order number: 9397 750 06272
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