BYM36C/20 [NXP]
3A, 600V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | BYM36C/20 |
| 厂家： | 
NXP |
| 描述： | 3A, 600V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件： | 总16页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BYM36 series
Fast soft-recovery
controlled avalanche rectifiers
1996 Sep 18
Product specification
Supersedes data of 1996 May 30
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
k
a
• Guaranteed avalanche energy
absorption capability
MAM104
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYM36A
−
−
−
−
−
−
−
200
400
V
V
V
V
V
V
V
BYM36B
BYM36C
600
BYM36D
800
BYM36E
1000
1200
1400
BYM36F
BYM36G
VR
continuous reverse voltage
BYM36A
−
−
−
−
−
−
−
200
400
V
V
V
V
V
V
V
BYM36B
BYM36C
600
BYM36D
800
BYM36E
1000
1200
1400
BYM36F
BYM36G
IF(AV)
average forward current
BYM36A to C
BYM36D and E
BYM36F and G
average forward current
BYM36A to C
BYM36D and E
BYM36F and G
Ttp = 55 °C; lead length = 10 mm;
see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16
−
−
−
3.0
2.9
2.9
A
A
A
IF(AV)
Tamb = 65 °C; PCB mounting (see
Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16
−
−
−
1.25
1.20
1.15
A
A
A
1996 Sep 18
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IFRM
repetitive peak forward current
BYM36A to C
Ttp = 55 °C; see Figs 8; 9 and 10
−
−
−
37
33
27
A
A
A
BYM36D and E
BYM36F and G
IFRM
repetitive peak forward current
BYM36A to C
Tamb = 65 °C; see Figs 11; 12 and 13
−
−
−
−
13
11
10
65
A
A
A
A
BYM36D and E
BYM36F and G
IFSM
non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max
prior to surge; VR = VRRMmax
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to surge;
inductive load switched off
−
10 mJ
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
see Figs 17 and 18
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 3 A; Tj = Tj max
MIN.
TYP.
MAX.
UNIT
VF
;
see Figs 19; 20 and 21
BYM36A to C
BYM36D and E
BYM36F and G
forward voltage
BYM36A to C
−
−
−
−
−
−
1.22
1.28
1.24
V
V
V
VF
IF = 3 A;
see Figs 19; 20 and 21
−
−
−
−
−
−
1.60
1.78
1.57
V
V
V
BYM36D and E
BYM36F and G
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYM36A
BYM36B
300
500
700
900
1100
1300
1500
−
−
−
−
−
−
−
−
−
−
−
−
V
V
BYM36C
−
V
BYM36D
−
V
BYM36E
−
V
BYM36F
−
V
BYM36G
reverse current
−
V
IR
VR = VRRMmax; see Fig.22
5
µA
µA
VR = VRRMmax
;
−
150
Tj = 165 °C; see Fig.22
1996 Sep 18
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
trr
reverse recovery time
BYM36A to C
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig. 26
−
−
−
−
−
−
100
150
250
ns
BYM36D and E
BYM36F and G
diode capacitance
BYM36A to C
ns
ns
Cd
f = 1 MHz; VR = 0 V;
see Figs 23 and 24
−
−
−
85
75
65
−
−
−
pF
pF
pF
BYM36D and E
BYM36F and G
when switched from
IF = 1 A to VR ≥ 30 V and
dIF/dt = −1 A/µs;
maximum slope of reverse recovery
current
dIR
--------
dt
BYM36A to C
BYM36D and E
BYM36F and G
−
−
−
−
−
−
7
6
5
A/µs
A/µs
A/µs
see Fig.27
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
25
75
K/W
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.25.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 18
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
GRAPHICAL DATA
MSA885
MSA884
3
3
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
20 15 10 lead length (mm)
20 15 10 lead length (mm)
2
2
1
1
0
0
0
o
o
100
200
0
100
200
T
( C)
T
( C)
tp
tp
BYM36D and E
BYM36A to C
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
Fig.3 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
MLB492
MBD418
2.0
4.0
handbook, halfpage
I
I
F(AV)
(A)
F(AV)
(A)
1.6
3.2
lead length 10 mm
1.2
0.8
0.4
0
2.4
1.6
0.8
0
0
100
200
0
100
200
o
o
T
( C)
T
tp
( C)
amb
BYM36A to C
BYM36F and G
a = 1.42; VR = VRRMmax; δ = 0.5.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Device mounted as shown in Fig.25.
Switched mode application.
Fig.4 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
Fig.5 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
1996 Sep 18
5
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
MLB493
MBD417
2.0
2.0
I
I
F(AV)
F(AV)
(A)
(A)
1.6
1.6
1.2
0.8
0.4
0
1.2
0.8
0.4
0
0
100
200
0
100
200
o
o
T
( C)
T
( C)
amb
amb
BYM36D and E
BYM36F and G
a = 1.42; VR = VRRMmax; δ = 0.5.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.25.
Switched mode application.
Device mounted as shown in Fig.25.
Switched mode application.
Fig.6 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
Fig.7 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
MSA890
40
I
FRM
(A)
δ = 0.05
30
0.1
0.2
20
10
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYM36A to C
Ttp = 55°C; Rth j-tp = 25 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18
6
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
MSA889
40
I
FRM
(A)
30
20
10
= 0.05
δ
0.1
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYM36D and E
Ttp = 55°C; Rth j-tp = 25 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MBD450
30
I
FRM
(A)
25
= 0.05
δ
20
15
0.1
0.2
10
5
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYM36F and G
Ttp = 55°C; Rth j-tp = 25 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18
7
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
MSA887
16
I
FRM
(A)
12
= 0.05
δ
8
4
0.1
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYM36A to C
Tamb = 65 °C; Rth j-a = 75 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MSA888
12
I
FRM
(A)
= 0.05
δ
10
8
6
0.1
0.2
4
2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYM36D and E
Tamb = 65 °C; Rth j-a = 75 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18
8
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
MBD445
12
I
FRM
(A)
10
= 0.05
δ
8
6
0.1
0.2
4
2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYM36F and G
Tamb = 65 °C; Rth j-a = 75 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MSA882
MSA883
5
5
handbook, halfpage
2.5
2
2.5
2
P
(W)
P
(W)
1.57
a = 3
a = 3
1.57
1.42
1.42
4
3
4
3
2
1
0
2
1
0
0
0
1
2
3
1
2
3
I
(A)
I
(A)
F(AV)
F(AV)
BYM36A to C
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
BYM36D and E
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.14 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Fig.15 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
1996 Sep 18
9
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
MSA873
MLB560
200
5
handbook, halfpage
handbook, halfpage
2.5
2
1.57
1.42
P
(W)
T
j
a = 3
4
3
(°C)
100
2
1
0
A
B
C
D
E
0
0
0
1
2
3
I
(A)
400
800
1200
F(AV)
V
(V)
R
BYM36F and G
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
BYM36A to E
Solid line = VR.
Fig.16 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Dotted line = VRRM; δ = 0.5.
Fig.17 Maximum permissible junction temperature
as a function of reverse voltage.
MSA880
MLB601
12
200
handbook, halfpage
handbook, halfpage
I
F
T
j
(A)
o
( C)
8
100
4
0
F
G
0
0
1
2
3
0
1000
2000
V
(V)
V
(V)
R
F
BYM36F and G
BYM36A to C
Solid line = VR.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Dotted line = VRRM; δ = 0.5.
Fig.18 Maximum permissible junction temperature
as a function of reverse voltage.
Fig.19 Forward current as a function of forward
voltage; maximum values.
1996 Sep 18
10
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
MSA881
MBD425
12
12
handbook, halfpage
handbook, halfpage
I
I
F
F
(A)
(A)
8
8
4
4
0
0
0
1
2
3
0
1
2
3
4
V
(V)
V
(V)
F
F
BYM36D and E.
BYM36F and G.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.20 Forward current as a function of forward
voltage; maximum values.
Fig.21 Forward current as a function of forward
voltage; maximum values.
MGC550
MSA886
3
2
10
10
handbook, halfpage
I
R
(µA)
C
d
BYM36A,B,C
(pF)
2
10
10
BYM36D,E
10
1
1
3
2
0
100
200
1
10
10
10
T (°C)
V
(V)
j
R
BYM36A to E
VR = VRRMmax
.
f = 1 MHz; Tj = 25 °C.
Fig.22 Reverse current as a function of junction
temperature; maximum values.
Fig.23 Diode capacitance as a function of reverse
voltage, typical values.
1996 Sep 18
11
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
MBD438
2
10
50
25
handbook, halfpage
C
d
(pF)
7
50
10
2
3
1
2
3
4
1
10
10
10
10
MGA200
V
(V)
R
BYM36F and G
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.24 Diode capacitance as a function of reverse
voltage, typical values.
Fig.25 Device mounted on a printed-circuit board.
DUT
I
F
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤< 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.26 Test circuit and reverse recovery time waveform and definition.
12
1996 Sep 18
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
I
andbook, halfpage
F
dI
F
dt
t
rr
t
10%
dI
R
dt
100%
I
R
MGC499
Fig.27 Reverse recovery definitions.
1996 Sep 18
13
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
PACKAGE OUTLINE
k
a
1.35
max
4.5
max
MBC049
28 min
5.0 max
28 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.28 SOD64.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 18
14
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Rugged glass SOD64 package, using a high temperature alloyed construction.
Communications
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This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
Cross reference
Models
Features
Packages
Application notes
Selection guides
Other technical documentation
End of Life information
Datahandbook system
l Glass passivated
l High maximum operating temperature
l Low leakage current
l Excellent stability
l Guaranteed avalanche energy absorption capability
l Available in ammo-pack
Relevant Links
l Also available with preformed leads for easy insertion.
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BYM36 series
BYM36 series
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BYM36 series Fast soft-recovery controlled
avalanche rectifiers
18-Sep-96
Product
Specification
14
78
Products, packages, availability and ordering
North American
Partnumber
Order code
(12nc)
Partnumber
BYM36C
marking/packing
package device status buy online
SOD64 Full production
Standard Marking * Reel Pack, Axial,
Standard
BYM36C T/R
9338 185 50113
9338 185 50133
Standard Marking * Ammopack,
Axial, 52mm
BYM36C AMO
SOD64 Full production
BYM36C/20
BYM36C/24
BYM36C/40
9340 258 10112 Standard Marking * Bulk Pack
9340 559 52112 Standard Marking * Bulk Pack
9340 507 20112 Standard Marking * Bulk Pack
SOD64 Full production
SOD64 Full production
SOD64 Full production
-
-
-
Standard Marking * Reel Pack, Axial,
BYM36D
BYM36D T/R
BYM36D AMO
BYM36E T/R
BYM36E AMO
9338 185 60113
Standard
SOD64 Full production
SOD64 Full production
SOD64 Full production
-
Standard Marking * Ammopack,
9338 185 60133
Axial, 52mm
Standard Marking * Reel Pack, Axial,
BYM36E
9338 185 70113
Standard
Standard Marking * Ammopack,
9338 185 70133
SOD64 Full production
SOD64 Full production
SOD64 Full production
Axial, 52mm
BYM36E/40
BYM36G
9340 555 88112 Standard Marking * Bulk Pack
-
-
Standard Marking * Reel Pack, Axial,
9340 305 00113
Standard
Standard Marking * Ammopack,
9340 305 00133
SOD64 Full production
-
Axial, 52mm
Please read information about some discontinued variants of this product.
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BYM36 series links to the similar products page containing an overview of products that are similar in function or related to the part
number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and
products from the same functional category.
Copyright © 2000
Royal Philips Electronics
All rights reserved.
Terms and conditions.
相关型号：
BYM36C/20113
DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
NXP
BYM36C/20133
DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
NXP
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