BYQ28-100 [NXP]
Rectifier diodes ultrafast; 整流二极管超快
| 型号： | BYQ28-100 |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes ultrafast |
| 文件： | 总6页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated dual epitaxial
rectifier diodes in a full pack plastic
envelope, featuring low forward
voltage drop, ultra-fast recovery
SYMBOL
PARAMETER
MAX. MAX. MAX. UNIT
BYQ28X-
100
100
150
150
200
200
VRRM
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
V
times
and
soft
recovery
characteristic. They are intended for
usein switchedmode power supplies
and high frequency circuits in general
where low conduction and switching
losses are essential.
VF
IO(AV)
0.895 0.895 0.895
V
A
10
10
10
trr
25
25
25
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
anode 1 (a)
case
a1
1
a2
3
2
cathode (k)
anode 2 (a)
3
k
2
case isolated
1
2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-100
100
100
100
-150
150
150
150
-200
200
200
200
VRRM
VRWM
VR
Repetitive peak reverse voltage
-
-
-
V
V
V
Crest working reverse voltage
Continuous reverse voltage1
IO(AV)
Output current (both diodes
conducting)2
square wave
-
10
A
δ = 0.5; Ths ≤ 92 ˚C
sinusoidal
-
9
A
a = 1.57; Ths ≤ 95 ˚C
IO(RMS)
IFRM
RMS forward current
-
-
14
10
A
A
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Ths ≤ 92 ˚C
IFSM
Non-repetitive peak forward
current per diode
t = 10 ms
-
-
50
55
A
A
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
I2t
Tstg
Tj
I2t for fusing
Storage temperature
Operating junction temperature
t = 10 ms
-
-40
-
12.5
150
150
A2s
˚C
˚C
1 Ths ≤ 148˚C for thermal stability.
2 Neglecting switching and reverse current losses
August 1996
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
heatsink
waveform;
R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Thermal resistance junction to with heatsink compound
-
-
-
-
-
55
5.7
6.7
-
K/W
K/W
K/W
heatsink
without heatsink compound
Rth j-a
Thermal resistance junction to in free air
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage (per diode)
IF = 5 A; Tj = 150˚C
IF = 5 A
-
-
-
-
-
0.80 0.895
V
V
0.95
1.10
0.1
2
1.10
1.25
0.2
IF = 10 A
V
IR
Reverse current (per diode)
VR = VRWM; Tj = 100 ˚C
VR = VRWM
mA
µA
10
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Qs
trr1
trr2
Vfr
Reverse recovery charge (per
diode)
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
-
-
-
-
4
15
10
1
9
25
20
-
nC
ns
ns
V
Reverse recovery time (per
diode)
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
Reverse recovery time (per
diode)
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
Forward recovery voltage (per IF = 1 A; dIF/dt = 10 A/µs
diode)
August 1996
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
dI
0.5A
IF
I
F
F
dt
t
0A
rr
time
I
= 0.25A
rec
IR
Q
100%
10%
s
trr2
I
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
PF / W
Ths(max) / C
D = 1.0
I
8
7
6
5
4
3
2
1
0
104.4
110.1
115.8
121.5
F
F
Vo = 0.748 V
Rs = 0.0293 Ohms
0.5
time
0.2
0.1
127.2
132.9
138.6
V
t
T
p
tp
I
D =
V
fr
144.3
150
t
T
6
V
F
0
1
2
3
4
5
7
8
IF(AV) / A
time
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Ths(max) / C
PF / W
R
6
5
4
3
2
1
0
115.8
121.5
127.2
132.9
138.6
Vo = 0.748 V
Rs = 0.0293 Ohms
a = 1.57
1.9
2.2
D.U.T.
2.8
Voltage Pulse Source
4
Current
shunt
to ’scope
144.3
150
0
1
2
3
4
5
6
IF(AV) / A
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
August 1996
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
Qs / nC
trr / ns
1000
100
10
IF=5A
IF=2A
IF=1A
100
10
IF=5A
IF=1A
1.0
1
1
0.1
100
10
dIF/dt (A/us)
1.0
10
100
-dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Irrm / A
10
Zth j-hs (K/W)
10
without heatsink compound
with heatsink compound
1
1
IF=5A
0.1
IF=1A
0.1
t
P
p
D
t
0.01
0.01
10us
10
100
1
1ms
0.1s
10s
-dIF/dt (A/us)
tp / s
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
th j-hs = f(tp).
Z
IF / A
15
Tj=150C
Tj=25C
10
5
max
typ
0
0.5
1.5
0
1
VF / V
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
August 1996
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
6.4
2.5
0.8 max. depth
15.8
max
seating
plane
15.8
max.
19
max.
3 max.
not tinned
3
2.5
13.5
min.
1
2
3
M
0.4
1.0 (2x)
0.6
2.5
0.9
0.7
2.54
0.5
5.08
1.3
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 1996
5
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
6
Rev 1.000
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