BYQ28EDSERIES [NXP]
Rectifier diodes ultrafast. rugged ; 整流二极管超快。崎岖\n
| 型号： | BYQ28EDSERIES |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes ultrafast. rugged
|
| 文件： | 总8页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ28E, BYQ28EB, BYQ28ED series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
VR = 150 V/ 200 V
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
VF ≤ 0.895 V
IO(AV) = 10 A
IRRM = 0.2 A
trr ≤ 25 ns
a1
1
a2
3
k
2
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ28E series is supplied in the SOT78 conventional leaded package.
The BYQ28EB series is supplied in the SOT404 surface mounting package.
The BYQ28ED series is supplied in the SOT428 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
SOT428
PIN
1
DESCRIPTION
tab
tab
tab
anode 1
cathode 1
anode 2
2
3
2
2
1
3
1
3
1 2 3
tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYQ28E/ BYQ28EB/ BYQ28ED
-150
-200
VRRM
VRWM
Peak repetitive reverse
-
-
150
200
V
V
voltage
Working peak reverse
voltage
Continuous reverse voltage
150
150
200
200
VR
-
-
V
A
IO(AV)
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
square wave; δ = 0.5; Tmb ≤ 119 ˚C
square wave; δ = 0.5; Tmb ≤ 119 ˚C
10
10
IFRM
IFSM
-
A
Non-repetitive peak forward t = 10 ms
-
-
50
55
A
A
current per diode
t = 8.3 ms
sinusoidal; with reapplied VRRM(max)
tp = 2 µs; δ = 0.001
IRRM
IRSM
Tj
Peak repetitive reverse
surge current per diode
-
0.2
0.2
A
A
Peak non-repetitive reverse tp = 100 µs
surge current per diode
Operating junction
-
-
150
150
˚C
˚C
temperature
Storage temperature
Tstg
- 40
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
October 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ28E, BYQ28EB, BYQ28ED series
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
-
8
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction per diode
to mounting base both diodes
Thermal resistance junction SOT78 package, in free air
to ambient SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
-
-
-
-
-
4.5
K/W
K/W
K/W
K/W
-
3
-
60
50
-
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 5 A; Tj = 150˚C
-
-
-
-
-
-
0.8 0.895
V
V
IF = 5 A
0.95
1.1
2
1.1
1.25
10
IF = 10 A
VR = VRWM
VR = VRWM; Tj = 100˚C
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 5 A; VR ≥ 30 V; -dIF/dt = 50 A/µs
V
IR
Reverse current
µA
mA
nC
ns
ns
A
0.1
4
0.2
9
Qrr
trr1
trr2
Irrm
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Peak reverse recovery
current
15
10
0.5
25
-
-
20
0.7
Vfr
Forward recovery voltage
IF = 1 A; dIF/dt = 10 A/µs
-
1
-
V
October 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ28E, BYQ28EB, BYQ28ED series
R
dI
I
F
F
dt
t
rr
D.U.T.
Voltage Pulse Source
time
Current
shunt
Q
100%
10%
s
to ’scope
I
I
R
rrm
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Circuit schematic for trr2
I
F
F
0.5A
IF
0A
time
I
= 0.25A
rec
V
IR
V
trr2
fr
V
F
I = 1A
time
R
Fig.2. Definition of Vfr
Fig.5. Definition of trr2
PF / W
Tmb(max) / C
D = 1.0
Tmb(max) / C
PF / W
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
110
115
120
125
130
135
140
Vo = 0.748 V
Vo = 0.748 V
Rs = 0.0293 Ohms
Rs = 0.0293 Ohms
a = 1.57
120
125
1.9
2.2
0.5
2.8
0.2
4
130
135
140
145
150
0.1
t
p
t
p
I
D =
T
145
150
t
T
6
0
1
2
3
4
IF(AV) / A
5
7
8
0
1
2
3
4
5
6
IF(AV) / A
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
October 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ28E, BYQ28EB, BYQ28ED series
Qs / nC
100
trr / ns
1000
IF=5A
IF=2A
IF=1A
100
10
IF=5A
10
IF=1A
1.0
1
1
0.1
100
10
dIF/dt (A/us)
1.0
10
100
-dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Transient thermal impedance, Zth j-mb (K/W)
10
Irrm / A
10
1
1
IF=5A
0.1
0.1
IF=1A
p
t
p
t
P
0.01
D
D =
T
t
T
0.01
0.001
1us
10us 100us 1ms
10ms 100ms
1s
10s
10
100
1
pulse width, tp (s)
-dIF/dt (A/us)
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
IF / A
15
Tj=150C
Tj=25C
10
5
max
typ
0
0.5
1.5
0
1
VF / V
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
October 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ28E, BYQ28EB, BYQ28ED series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ28E, BYQ28EB, BYQ28ED series
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
4.5 max
1.4 max
10.3 max
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
October 1998
6
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ28E, BYQ28EB, BYQ28ED series
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
seating plane
2.38 max
5.4
1.1
6.73 max
0.93 max
tab
4 min
6.22 max
0.5 min
10.4 max
4.6
0.5
2
0.3
0.5
3
1
0.8 max
(x2)
2.285 (x2)
Fig.15. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
2.5
1.5
4.57
Fig.16. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
October 1998
7
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ28E, BYQ28EB, BYQ28ED series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1998
8
Rev 1.300
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