BYQ60EWSERIES [NXP]
Rectifier diodes ultrafast. rugged ; 整流二极管超快。崎岖\n
| 型号： | BYQ60EWSERIES |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes ultrafast. rugged
|
| 文件： | 总6页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ60EW series
FEATURES
SYMBOL
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.85 V
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
1
a2
3
IO(AV) = 60 A
IRRM ≤ 0.2 A
k
2
trr ≤ 35 ns
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
PIN
DESCRIPTION
anode 1
cathode
1
2
The BYQ60EW seriesis suppliedin
the conventional leaded SOT429
(TO247) package.
3
anode 2
cathode
tab
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
BYQ60EW
-150
150
150
150
-200
200
200
200
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
-
-
-
V
V
V
IO(AV)
IFRM
IFSM
Average rectified output current square wave
(both diodes conducting) δ = 0.5; Tmb ≤ 82 ˚C
-
-
60
60
A
A
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Non-repetitive peak forward
current per diode
Tmb ≤ 82 ˚C
t = 10 ms
-
-
380
414
A
A
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
IRRM
IRSM
-
-
0.2
0.2
A
A
per diode
Non-repetitive peak reverse
current per diode
tp = 100 µs
Tstg
Tj
Storage temperature
Operating junction temperature
-40
-
150
150
˚C
˚C
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
-
8
kV
December 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ60EW series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance junction to per diode
-
-
-
-
-
45
0.85
0.6
-
K/W
K/W
K/W
mounting base
both diodes conducting
Rth j-a
Thermal resistance junction to in free air
ambient
ELECTRICAL CHARACTERISTICS
characteristics arre per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 30 A; Tj = 150˚C
IF = 30 A
-
-
-
-
-
-
-
0.73
0.95
1.07
10
0.85
1.1
1.2
200
2
V
V
IF = 60 A
V
IR
Reverse current
VR = VRWM
µA
mA
nC
ns
VR = VRWM; Tj = 100 ˚C
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
IF = 1 A; dIF/dt = 10 A/µs
1
Qs
trr
Reverse recovery charge
Reverse recovery time
10
27
20
35
Vfr
Forward recovery voltage
-
0.7
-
V
December 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ60EW series
dI
I
F
Forward dissipation, PF (W)
BYQ60EW
Tmb(max) (C)
120.25
F
35
30
25
20
15
10
5
dt
1.9
124.5
2.2
a = 1.57
t
128.75
133
rr
2.8
4
time
137.25
141.5
145.75
150
Q
100%
10%
s
0
I
I
R
0
5
10
15
20
25
30
rrm
Average forward current, IF(AV) (A)
Fig.1. Definition of trr, Qs and Irrm
Fig.4. Maximum forward dissipation PF = f(IF(AV))per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
I
F
F
trr / ns
BYQ60EW
1000
100
10
IF = 1 A
time
V
V
fr
V
F
1
10
100
dIF/dt (A/us)
time
Fig.2. Definition of Vfr
Fig.5. Typical trr at Tj = 25 ˚C.
Forward dissipation, PF (W)
BYQ60EW
Tmb(max) (C)
Irrm / A
BYQ60EW
45
111.75
10
1
40
35
30
25
20
15
10
5
116
D = 1.0
0.5
120.25
124.5
0.2
0.1
IF = 1 A
128.75
133
D = tp/T
tp
T
137.25
141.5
0.1
0.01
145.75
150
0
0
10
20
30
40
50
1
10
-dIF/dt (A/us)
100
Average forward current, IF(AV) (A)
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Fig.6. Typical Irrm at Tj = 25 ˚C.
December 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ60EW series
Forward Current, IF (A)
BYQ60EW
max
60
Tj = 150 C
55
Tj = 25 C
50
typ
45
40
35
30
25
20
15
10
5
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Forward Voltage, VF (V)
1
1.1 1.2 1.3
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Qs / nC
BYQ60EW
100
10
1
IF=5A
IF=2A
IF=1A
1
10
100
-dIF/dt (A/us)
Fig.8. Typical Qs at Tj = 25 ˚C.
Transient Thermal Impedance, Zth j-mb (K/W)
Single pulse
BYQ60EW
1
0.1
P
D
tp
0.01
t
0.001
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
pulse width, tp (s)
Fig.9. Transient thermal impedance; Zth j-hs = f(tp).
December 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ60EW series
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
5.3 max
16 max
1.8
o
3.5
max
5.3
7.3
3.5
21
max
seating
plane
15.5
max
2.5
4.0
max
15.5
min
1
2
3
0.9 max
2.2 max
3.2 max
1.1
0.4 M
5.45 5.45
Fig.10. SOT429 (TO247); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
December 1998
5
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ60EW series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
December 1998
6
Rev 1.000
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