BYT79 [NXP]

Rectifier diodes ultrafast; 整流二极管超快


型号：	BYT79
厂家：	NXP
描述：	Rectifier diodes ultrafast 整流二极管超快整流二极管
文件：	总5页 (文件大小：47K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast

BYT79 series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

V_R= 300 V/ 400 V/ 500 V

• Soft recovery characteristic

• High thermal cycling performance

• Low thermal resistance

V_F≤ 1.05 V

I_F(AV)= 14 A

t_rr≤ 60 ns

GENERAL DESCRIPTION

PINNING

SOD59 (TO220AC)

Ultra-fast, epitaxial rectifier diodes

intended for use as output rectifiers

in high frequency switched mode

power supplies.

DESCRIPTION

cathode

anode

cathode

tab

The BYT79 series is supplied in the

conventional

leaded

SOD59

tab

(TO220AC) package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

BYT79

-300

300

-400

400

-500

500

V_RRM

V_R

Peak repetitive reverse voltage

Continuous reverse voltage

Average forward current¹

_mb≤ 147˚C

I_F(AV)

I_FSM

square wave; δ = 0.5;

_mb≤ 117 ˚C

Non-repetitive peak forward

current.

t = 10 ms

130

143

t = 8.3 ms

sinusoidal; with reapplied

V_RRM(max)

T_stg

T_j

Storage temperature

Operating junction temperature

-40

150

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

Thermal resistance junction to

mounting base

Thermal resistance junction to in free air.

ambient

2.0

K/W

R_{th j-a}

K/W

1 Neglecting switching and reverse current losses

September 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast

BYT79 series

ELECTRICAL CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_F

I_R

Forward voltage

I_F= 15 A; T_j= 150˚C

I_F= 30 A

0.90

1.17

5.0

1.05

1.38

µA

Reverse current

V_R= V_RRM

V_R= V_RRM; T_j= 100 ˚C

I_F= 2 A to V_R≥ 30 V;

dI_F/dt = 20 A/µs

I_F= 1 A to V_R≥ 30 V;

dI_F/dt = 100 A/µs

0.2

0.8

Q_s

t_rr

Reverse recovery charge

Reverse recovery time

4.0

2.5

5.2

I_rrm

V_fr

Peak reverse recovery current I_F= 10 A to V_R≥ 30 V;

dI_F/dt = 50 A/µs; T_j= 100˚C

Forward recovery voltage

I_F= 10 A; dI_F/dt = 10 A/µs

PF / W

BYT79

Tmb(max) / C

100

Vo = 0.9075 V

D = 1.0

Rs = 0.0095 Ohms

110

0.5

120

130

140

150

time

0.2

0.1

D =

100%

10%

rrm

IF(AV) / A

Fig.1. Definition of t_rr, Q_sand I_rrm

Fig.3. Maximum forward dissipation P_F= f(I_F(AV));

square wave where I_F(AV)=I_F(RMS)x √D.

PF / W

BYT79

Tmb(max) / C

110

120

Vo = 0.9075 V

Rs = 0.0095 Ohms

a = 1.57

1.9

2.2

2.8

time

130

140

150

IF(AV) / A

Fig.2. Definition of V_fr

Fig.4. Maximum forward dissipation P_F= f(I_F(AV));

sinusoidal current waveform where a = form

factor = I_F(RMS)/ I_F(AV)

September 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast

BYT79 series

Qs / nC

trr / ns

1000

100

IF=20 A

IF = 20 A

100

2 A

Tj = 25 C

Tj = 100 C

100

dIF/dt (A/us)

1.0

-dIF/dt (A/us)

100

Fig.5. Maximum t_rrat T_j= 25˚C and 100˚C

Fig.8. Maximum Q_sat T_j= 25˚C

Irrm / A

Transient thermal impedance, Zth j-mb (K/W)

IF= 20 A

IF=1A

0.1

0.01

D =

Tj = 25 C

Tj = 100 C

0.01

0.001

1us

10us 100us 1ms

10ms 100ms

BYV79E

10s

100

pulse width, tp (s)

-dIF/dt (A/us)

Fig.6. Maximum I_rrmat T_j= 25˚C and 100˚C.

Fig.9. Transient thermal impedance Z_th= f(t_p)

BYT79

IF / A

Tj = 25 C

Tj = 150 C

typ

max

0.5

1.5

VF / V

Fig.7. Typical and maximum forward characteristic

I_F= f(V_F); parameter T_j

September 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast

BYT79 series

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

4,5

max

10,3

max

1,3

3,7

2,8

5,9

min

15,8

max

3,0 max

not tinned

3,0

13,5

min

1,3

max

(2x)

0,9 max (2x)

0,6

2,4

5,08

Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base.

Notes

1. Refer to mounting instructions for TO220 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

September 1998

Rev 1.300

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast

BYT79 series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

September 1998

Rev 1.300

相关型号：