BYV116-20 [NXP]
Rectifier diodes Schottky barrier; 整流二极管肖特基势垒
| 型号： | BYV116-20 |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes Schottky barrier |
| 文件： | 总6页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV116, BYV116B series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
VR = 20 V/ 25 V
IO(AV) = 10 A
a1
1
a2
3
k
2
VF ≤ 0.54 V
GENERAL DESCRIPTION
Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power
supplies.
The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package.
The BYV116B series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
anode 1 (a)
cathode (k) 1
tab
tab
1
2
2
3
anode 2 (a)
cathode (k)
1
3
1 2 3
tab
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
BYV118-
20
25
25
25
BYV116B-
20
VRRM
VRWM
Peak repetitive reverse
-
-
20
V
V
voltage
Working peak reverse
voltage
Continuous reverse voltage
20
20
25
25
VR
Tmb ≤ 124 ˚C
-
-
V
A
IO(AV)
Average rectified forward
current (both diodes
conducting)
square wave; δ = 0.5; Tmb ≤ 123 ˚C
10
10
IFRM
IFSM
Repetitive peak forward
current per diode
square wave; δ = 0.5; Tmb ≤ 123 ˚C
-
A
Non-repetitive peak forward t = 10 ms
-
-
50
55
A
A
current per diode
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
IRRM
Tj
Peak repetitive reverse
surge current per diode
Operating junction
temperature
-
-
1
A
150
175
˚C
˚C
Tstg
Storage temperature
- 65
1. It is not possible to make connection to pin 2 of the SOT404 package.
March 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV116, BYV116B series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction per diode
-
-
-
-
-
4
3.5
-
K/W
K/W
K/W
K/W
to mounting base
both diodes
-
Thermal resistance junction SOT78 package, in free air
60
50
to ambient
SOT404 package, pcb mounted, minimum
footprint, FR4 board
-
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 5 A; Tj = 125˚C
IF = 10 A; Tj = 125˚C
IF = 5 A
-
-
-
-
-
-
0.47 0.54
0.66 0.77
0.58 0.64
V
V
V
IR
Reverse current
VR = VRWM
0.05
5
3
10
-
mA
mA
pF
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
Cd
Junction capacitance
160
March 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV116, BYV116B series
0.5
IR / A
Tmb(max) / C
D = 1.0
Forward dissipation, PF (W)
5
100mA
10mA
1mA
130
134
Vo = 0.31 V
Rs = 0.046 Ohms
150 C
125 C
100 C
4
0.2
0.1
3
138
142
146
150
75 C
2
1
0
100uA
10uA
1uA
t
T
p
50 C
t
p
I
D =
Tj = 25 C
t
T
0
1
2
3
4
5
6
7
8
0
5
10
VR / V
15
20
25
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
IF(AV) =IF(RMS) x √D.
Cd / pF
2.2
Forward dissipation, PF (W)
Tmb(max) / C
a = 1.57
1000
100
10
5
4
3
2
1
0
130
134
138
Vo = 0.31 V
Rs = 0.046 Ohms
1.9
2.8
4
142
146
150
0
1
2
3
4
5
1
10
100
Average forward current, IF(AV) (A)
VR / V
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
factor = IF(RMS) / IF(AV)
.
Transient thermal impedance, Zth j-mb (K/W)
10
IF / A
10
8
Tj = 25 C
Tj = 125 C
1
6
typ
max
0.1
4
p
t
p
t
P
0.01
D
D =
T
2
t
T
0.001
0
1us
10us 100us 1ms
10ms 100ms
1s
10s
0
0.2
0.4
VF / V
0.6
0.8
1
pulse width, tp (s)
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
March 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV116, BYV116B series
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
4.5 max
1.4 max
10.3 max
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.7. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.8. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
March 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV116, BYV116B series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.9. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
March 1998
5
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV116, BYV116B series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1998
6
Rev 1.000
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