BYV25G-600 [NXP]
Ultrafast rectifier diode; 超快整流二极管型号: | BYV25G-600 |
厂家: | NXP |
描述: | Ultrafast rectifier diode |
文件: | 总11页 (文件大小:154K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BYV25G-600
Ultrafast rectifier diode
Rev. 01 — 4 February 2010
Product data sheet
1. Product profile
1.1 General description
Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package.
1.2 Features and benefits
Fast switching
Low switching losses
Low thermal resistance
High thermal cycling performance
Low forward voltage drop
Soft recovery minimizes
power-consuming oscillations
Low profile package facilitates
compact/slim designs
1.3 Applications
Discontinuous Current Mode (DCM)
High frequency switched-mode power
Power Factor Correction (PFC)
supplies
1.4 Quick reference data
Table 1.
Symbol Parameter
VRRM repetitive peak reverse
voltage
average forward current square-wave pulse; δ = 0.5;
mb ≤ 135 °C; see Figure 1
Quick reference
Conditions
Min
Typ
Max Unit
-
-
600
V
IF(AV)
-
-
-
5
A
T
and 2
Dynamic characteristics
trr
reverse recovery time
IF = 1 A; VR ≥ 30 V;
dIF/dt = 100 A/µs; Tj = 25 °C;
see Figure 5
50
60
ns
BYV25G-600
NXP Semiconductors
Ultrafast rectifier diode
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
n.c.
K
not connected
cathode
2
2
1
3
3
A
anode
003aad550
mb
K
mounting base; cathode
1
2
3
SOT226A (I2PAK)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226A
BYV25G-600
I2PAK
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
-
600
V
VRWM
crest working reverse
voltage
-
600
V
VR
reverse voltage
Tmb ≤ 100 °C; DC
-
-
600
5
V
A
IF(AV)
average forward
current
square-wave pulse; δ = 0.5; Tmb ≤ 135 °C; see Figure 1
and 2
IFRM
IFSM
repetitive peak forward square-wave pulse; δ = 0.5; Tmb ≤ 135 °C
current
-
10
A
non-repetitive peak
forward current
tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C
tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C
-
66
A
-
60
A
Tstg
Tj
storage temperature
junction temperature
-40
-
150
150
°C
°C
BYV25G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
2 of 11
BYV25G-600
NXP Semiconductors
Ultrafast rectifier diode
003aac347
003aac348
10
8
6
4
2
0
P
tot
P
(W)
tot
(W)
δ = 1
8
6
4
2
0
a = 1.57
1.9
0.5
2.2
2.8
0.2
4.0
0.1
0
2
4
6
8
0
2
4
6
I
(A)
F(AV)
I
(A)
F(AV)
Fig 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
BYV25G-600_1
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
3 of 11
BYV25G-600
NXP Semiconductors
Ultrafast rectifier diode
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to
mounting base
with heatsink compound;
see Figure 3
-
-
2.5
K/W
Rth(j-a)
thermal resistance from junction to
ambient free air
-
60
-
K/W
001aag913
10
Z
th(j-mb)
(K/W)
1
t
−1
−2
−3
p
10
10
10
P
δ =
T
t
t
p
T
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
10
t
p
(s)
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width
BYV25G-600_1
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
4 of 11
BYV25G-600
NXP Semiconductors
Ultrafast rectifier diode
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VF
forward voltage
IF = 5 A; see Figure 4
IF = 5 A; Tmb ≤ 150 °C; see Figure 4
VR = 600 V; Tj = 100 °C
VR = 600 V
-
-
-
-
1.12
0.97
0.1
2
1.3
V
1.11
0.35
50
V
IR
reverse current
mA
µA
Dynamic characteristics
Qr
recovered charge
IF = 2 A; VR ≥ 30 V; dIF/dt = 20 A/µs;
see Figure 5
-
-
-
-
40
50
3.2
3
70
60
-
nC
ns
V
trr
reverse recovery time
IF = 1 A; VR ≥ 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; see Figure 5
VFR
IRM
forward recovery
voltage
IF = 10 A; dIF/dt = 10 A/µs; see Figure 6
peak reverse recovery IF = 10 A; VR ≤ 30 V; dIF/dt = 50 A/µs;
5.5
A
current
Tj = 100 °C; see Figure 5
003aac232
dl
15
10
5
F
I
F
dt
IF
(A)
t
rr
time
25 %
(1)
(2)
(3)
100 %
Q
r
I
I
RM
R
003aac562
0
0
0.4
0.8
1.2
1.6
V
F (V)
Fig 4. Forward current as a function of forward
voltage
Fig 5. Reverse recovery definitions; ramp recovery
BYV25G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
5 of 11
BYV25G-600
NXP Semiconductors
Ultrafast rectifier diode
I
F
time
V
F
V
FRM
V
F
time
001aab912
Fig 6. Forward recovery definitions
BYV25G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
6 of 11
BYV25G-600
NXP Semiconductors
Ultrafast rectifier diode
7. Package outline
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
SOT226A
A
A
1
E
D
1
D
L
1
Q
b
1
b
2
L
1
2
3
c
b
e
e
0
5
10 mm
scale
Dimensions
Unit
A
A
1
b
b
1
b
2
c
D
D
1
E
e
L
L
1
Q
max 4.7 1.40 0.95 1.40 1.7 0.65 9.4 1.32 10.30
mm nom
min 4.3 1.15 0.70 1.14 1.3 0.45 8.6 1.02 9.65
15.0
12.5
2.6
2.54
(REF)
3.0
(REF)
2.2
sot226a_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
TO-262
JEITA
09-08-17
09-08-25
SOT226A
Fig 7. Package outline SOT226A (I2PAK)
BYV25G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
7 of 11
BYV25G-600
NXP Semiconductors
Ultrafast rectifier diode
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BYV25G-600_1
20100204
Product data sheet
-
-
BYV25G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
8 of 11
BYV25G-600
NXP Semiconductors
Ultrafast rectifier diode
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
9.2 Definitions
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
9.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BYV25G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
9 of 11
BYV25G-600
NXP Semiconductors
Ultrafast rectifier diode
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
such automotive applications, use and specifications, and (b) whenever
customer uses the product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at customer’s own
risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,
damages or failed product claims resulting from customer design and use of
the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless the data sheet of an NXP
Semiconductors product expressly states that the product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications. In
the event that customer uses the product for design-in and use in automotive
applications to automotive specifications and standards, customer (a) shall
use the product without NXP Semiconductors’ warranty of the product for
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BYV25G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
10 of 11
BYV25G-600
NXP Semiconductors
Ultrafast rectifier diode
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .8
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 4 February 2010
Document identifier: BYV25G-600_1
相关型号:
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