BYV27-200AMO [NXP]
暂无描述;型号: | BYV27-200AMO |
厂家: | NXP |
描述: | 暂无描述 整流二极管 超快恢复二极管 快速恢复二极管 |
文件: | 总16页 (文件大小:113K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BYV27 series
Ultra fast low-loss
controlled avalanche rectifiers
1997 Nov 24
Product specification
Supersedes data of 1996 Oct 02
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
k
a
• Guaranteed avalanche energy
absorption capability
MAM047
• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYV27-50
−
−
−
−
−
−
−
−
50
100
150
200
300
400
500
600
V
V
V
V
V
V
V
V
BYV27-100
BYV27-150
BYV27-200
BYV27-300
BYV27-400
BYV27-500
BYV27-600
VR
continuous reverse voltage
BYV27-50
−
−
−
−
−
−
−
−
50
100
150
200
300
400
500
600
V
V
V
V
V
V
V
V
BYV27-100
BYV27-150
BYV27-200
BYV27-300
BYV27-400
BYV27-500
BYV27-600
IF(AV)
average forward current
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
average forward current
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
Ttp = 85 °C; lead length = 10 mm;
see Figs 2, 3 and 4;
averaged over any 20 ms period;
see also Figs 14, 15 and 16
−
−
−
2.0
1.9
1.6
A
A
A
IF(AV)
Tamb = 60 °C; printed-circuit board
mounting (see Fig. 25);
see Figs 5, 6 and 7;
averaged over any 20 ms period;
see also Figs 14, 15 and 16
−
−
−
1.30
1.25
1.10
A
A
A
1997 Nov 24
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IFRM
repetitive peak forward current
BYV27-50 to 400
Ttp = 85 °C; see Figs 8, 9 and 10
−
−
20
16
A
A
BYV27-500 and 600
IFRM
repetitive peak forward current
BYV27-50 to 200
Tamb = 60 °C;
see Figs 11, 12 and 13
−
−
−
14
13
11
A
A
A
BYV27-300 and 400
BYV27-500 and 600
IFSM
non-repetitive peak forward current
BYV27-50 to 400
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
−
−
50
40
20
A
A
BYV27-500 and 600
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
mJ
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
see Fig. 17
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 2 A; Tj = Tj max
MIN.
TYP.
MAX.
UNIT
VF
;
see Figs 18, 19 and 20
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
forward voltage
−
−
−
−
−
−
0.78
0.82
1.00
V
V
V
VF
IF = 2 A;
see Figs 18, 19 and 20
BYV27-50 to 200
−
−
−
−
−
−
0.98
1.05
1.25
V
V
V
BYV27-300 and 400
BYV27-500 and 600
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYV27-50
BYV27-100
BYV27-150
BYV27-200
BYV27-300
BYV27-400
BYV27-500
BYV27-600
reverse current
55
110
165
220
330
440
560
675
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5
V
V
V
V
V
V
V
V
µA
IR
VR = VRRMmax
see Fig. 21
;
;
VR = VRRMmax
−
−
150
µA
Tj = 165 °C; see Fig. 21
1997 Nov 24
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
SYMBOL
PARAMETER
reverse recovery time
CONDITIONS
MIN.
TYP.
MAX.
UNIT
trr
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig. 27
BYV27-50 to 200
BYV27-300 to 600
−
−
−
−
25
50
ns
ns
Cd
diode capacitance
BYV27-50 to 200
f = 1 MHz; VR = 0;
see Figs 22, 23 and 24
−
−
−
−
100
80
65
−
−
−
−
4
pF
BYV27-300 and 400
BYV27-500 and 600
pF
pF
when switched from
IF = 1 A to VR ≥ 30 V
and dIF/dt = −1 A/µs;
see Fig. 26
A/µs
maximum slope of reverse recovery
current
dIR
--------
dt
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
K/W
K/W
Rth j-a
100
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig. 25.
For more information please refer to the “General Part of associated Handbook”.
1997 Nov 24
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
GRAPHICAL DATA
MLC293
MGA849
2.0
2.0
handbook, halfpage
F(AV)
handbook, halfpage
I
I
F(AV)
(A)
1.6
(A)
lead length 10 mm
20
15
10 lead length (mm)
1.6
1.2
1.2
0.8
0.4
0.8
0.4
0
0
0
100
200
0
100
200
o
o
T
( C)
T
( C)
tp
tp
BYV27-50 to 200
BYV27-300 and 400
a = 1.42; VR = VRRMmax; δ = 0.5.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MGK648
MGA848
3
2.0
handbook, halfpage
handbook, halfpage
F(AV)
I
I
F(AV)
(A)
(A)
1.6
lead length 10 mm
2
1.2
0.8
0.4
1
0
0
0
100
200
0
100
200
o
T
(°C)
T
( C)
tp
amb
BYV27-500 and 600
BYV27-50 to 200
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig. 25.
Switched mode application.
Fig.4 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1997 Nov 24
5
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
MGK649
MLC294
1.6
1.6
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
1.2
1.2
0.8
0.4
0
0.8
0.4
0
0
0
100
200
100
200
o
T
(°C)
T
( C)
amb
amb
BYV27-300 and 400
BYV27-500 and 600
a = 1.42; VR = VRRMmax; δ = 0.5.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig. 25.
Switched mode application.
Device mounted as shown in Fig. 25.
Switched mode application.
Fig.7 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.6 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MLC297
20
δ = 0.05
I
FRM
(A)
16
0.1
12
0.2
8
0.5
4
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV27-50 to 200
Ttp = 85 °C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 24
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
MLC299
20
δ = 0.05
I
FRM
(A)
16
12
8
0.1
0.2
0.5
1
4
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV27-300 and 400
Ttp = 85 °C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGK650
20
I
FRM
(A)
16
12
8
δ = 0.05
0.1
0.2
4
0.5
1
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV27-500 and 600
Ttp = 85 °C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 24
7
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
MLC298
16
I
FRM
(A)
δ = 0.05
12
0.1
8
0.2
4
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV27-50 to 200
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MLC300
16
I
FRM
(A)
δ = 0.05
12
8
0.1
0.2
4
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV27-300 and 400
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 24
8
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
MGK651
20
I
FRM
(A)
16
12
δ = 0.05
8
0.1
0.2
4
0.5
1
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV27-500 and 600
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGA870
MLC292
2.4
handbook, halfpage
P
2.4
handbook, halfpage
a = 3 2.5
2
P
(W)
(W)
1.57
2
1.57
1.42
a = 3
2.5
2.0
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
1.42
0
0
0
0
1
2
1
2
I
(A)
I
(A)
F(AV)
F(AV)
BYV27-50 to 200
BYV27-300 and 400
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.14 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.15 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
1997 Nov 24
9
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
MGK645
MGK652
2.0
200
handbook, halfpage
handbook, halfpage
2
a = 3
2.5
P
(W)
T
j
(°C)
1.57
1.42
1.6
1.2
0.8
0.4
0
100
0
0
50
100
0
1
2
I
(A)
V
(%V
)
Rmax
F(AV)
R
BYV27-500 and 600
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.16 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.17 Maximum permissible junction
temperature as a function of maximum
reverse voltage percentage.
MGA864
MLC291
6
6
handbook, halfpage
handbook, halfpage
I
I
F
F
(A)
(A)
4
2
0
4
2
0
0
0
1
2
1
2
V
(V)
V
(V)
F
F
BYV27-50 to 200
BYV27-300 and 400
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.18 Forward current as a function of forward
voltage; maximum values.
Fig.19 Forward current as a function of forward
voltage; maximum values.
1997 Nov 24
10
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
MBH649
MGC550
3
10
6
handbook, halfpage
handbook, halfpage
I
I
R
F
(A)
(µA)
2
10
4
10
2
0
1
0
0
1
2
100
200
V
(V)
T (°C)
F
j
BYV27-500 and 600
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
VR = VRRMmax
.
Fig.20 Forward current as a function of forward
voltage; maximum values.
Fig.21 Reverse current as a function of junction
temperature; maximum values.
MLC295
MLC296
2
2
10
10
handbook, halfpage
handbook, halfpage
C
d
C
d
(pF)
(pF)
10
10
1
1
2
3
2
3
1
10
10
10
1
10
10
10
V
(V)
V
(V)
R
R
BYV27-50 to 200
BYV27-300 and 400
f = 1 MHz; Tj = 25 °C.
f = 1 MHz; Tj = 25 °C.
Fig.22 Diode capacitance as a function of reverse
voltage; typical values.
Fig.23 Diode capacitance as a function of reverse
voltage; typical values.
1997 Nov 24
11
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
MGK653
2
10
50
25
handbook, halfpage
handbook, halfpage
C
d
(pF)
7
50
10
2
3
1
2
3
MGA200
1
10
10
10
V
(V)
R
BYV27-500 and 600
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.24 Diode capacitance as a function of reverse
voltage; typical values.
Fig.25 Device mounted on a printed-circuit board.
I
ndbook, halfpage
F
dI
F
dt
t
rr
t
10%
dI
R
dt
100%
I
R
MGC499
Fig.26 Reverse recovery definitions.
1997 Nov 24
12
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.27 Test circuit and reverse recovery time waveform and definition.
1997 Nov 24
13
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD57
(1)
k
a
b
G
D
L
L
DIMENSIONS (mm are the original dimensions)
0
2.5
5 mm
D
G
L
b
UNIT
max.
max.
min.
max.
scale
mm
0.81
3.81
4.57
28
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-10-14
SOD57
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Nov 24
14
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
NOTES
1997 Nov 24
15
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Tel. +66 2 745 4090, Fax. +66 2 398 0793
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Uruguay: see South America
Vietnam: see Singapore
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA56
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
117027/1200/04/pp16
Date of release: 1997 Nov 24
Document order number: 9397 750 02663
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