BYV29-600 [NXP]
Rectifier diode ultrafast; 整流器器超快二极管
| 型号： | BYV29-600 |
| 厂家： | 
NXP |
| 描述： | Rectifier diode ultrafast |
| 文件： | 总6页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29-600
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
VR = 600V
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
k
1
a
2
VF ≤ 1.03 V
IF(AV) = 9 A
trr ≤ 60 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
PIN
DESCRIPTION
cathode
anode
cathode
tab
1
2
The BYV29-600 is supplied in the
conventional
leaded
SOD59
tab
(TO220AC) package.
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VRWM
VR
Peak repetitive reverse voltage
-
-
-
600
600
600
V
V
V
Crest working reverse voltage
Continuous reverse voltage
IF(AV)
IFRM
IFSM
Average forward current1
square wave; δ = 0.5;
-
-
9
A
A
T
mb ≤ 120 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
18
T
mb ≤ 120 ˚C
Non-repetitive peak forward
current.
t = 10 ms
-
-
70
77
A
A
t = 8.3 ms
sinusoidal; with reapplied
VRRM(max)
Tstg
Tj
Storage temperature
Operating junction temperature
-40
-
150
150
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to in free air.
ambient
-
-
-
2.5
-
K/W
K/W
60
1 Neglecting switching and reverse current losses.
February 2000
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29-600
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 8 A; Tj = 150˚C
IF = 8 A
-
-
-
-
-
-
0.90
1.05
1.30
2.0
1.03
1.25
1.45
50
V
V
IF = 20 A
V
IR
Reverse current
VR = VRRM
µA
mA
nC
VR = VRRM; Tj = 100 ˚C
IF = 2 A to VR ≥ 30 V;
dIF/dt = 20 A/µs
IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs
0.1
0.35
70
Qs
trr
Reverse recovery charge
Reverse recovery time
40
-
-
-
50
3.0
3.2
60
5.5
-
ns
A
Irrm
Vfr
Peak reverse recovery current IF = 10 A to VR ≥ 30 V;
dIF/dt = 50 A/µs; Tj = 100˚C
Forward recovery voltage
IF = 10 A; dIF/dt = 10 A/µs
V
February 2000
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29-600
dI
I
F
Forward dissipation, PF (W)
Ths(max) (C)
a = 1.57
F
18
16
14
12
10
8
dt
1.9
110
120
2.2
t
2.8
rr
4
time
130
140
150
6
4
Q
100%
10%
s
2
I
0
I
R
0
2
4
6
8
10
12
rrm
Average forward current, IF(AV) (A)
Fig.1. Definition of trr, Qs and Irrm
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
I
F
F
trr / ns
1000
100
10
10A
time
V
1A
Tj = 25 C
Tj = 150 C
V
fr
V
F
time
10
-diF/dt
100
Fig.2. Definition of Vfr
Fig.5. Maximum trr at Tj = 25˚C and 100˚C
Forward dissipation, PF (W)
Ths(max) (C)
Irrm / A
10
20
IF=10A
D = 1.0
15
10
5
112.5
1
0.5
IF=1A
0.2
0.1
125
D = tp/T
tp
T
0.1
137.5
Tj = 25 C
Tj = 100C
150
0
0.01
0
2
4
6
8
10
12
14
10
100
1
Average forward current, IF(AV) (A)
-dIF/dt (A/us)
Fig.3. Maximum forward dissipation PF = f(IF(AV));
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C.
square wave where IF(AV) =IF(RMS) x √D.
February 2000
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29-600
Qs / nC
IF / A
30
1000
100
10
Tj=150 C
Tj=25 C
10A
2A
10A
20
10
0
IF=2A
typ
max
25 C
150 C
1
0.5
1.5
0
1
2
1
10
100
-diF / dt
VF / V
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.9. Maximum Qs at Tj = 25˚C
Cd / pF
100
Transient thermal impedance, Zth j-mb (K/W)
10
1
0.1
10
p
t
p
t
P
0.01
D
D =
T
1
t
T
1
10
VR / V
100
1000
0.001
1us
10us 100us 1ms
10ms 100ms
1s
10s
Fig.8. Typical junction capacitance Cd at f = 1 MHz;
Tj = 25˚C
pulse width, tp (s)
Fig.10. Transient thermal impedance Zth j-mb= f(tp)
February 2000
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29-600
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220
SOD59
E
P
A
A
1
q
D
1
D
(1)
L
1
L
2
Q
b
1
L
1
2
b
c
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
2
b
e
A
b
D
E
L
D
1
L
1
A
1
c
UNIT
P
q
Q
L
1
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
5.08
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOD59
2-lead TO-220
97-06-11
Fig.11. TO220AC; pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 2000
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29-600
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 2000
6
Rev 1.100
相关型号：
BYV29B-300-E3/45
DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
BYV29B-300-HE3/45
DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
BYV29B-300-HE3/81
DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
BYV29B-300HE3/45
DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
BYV29B-400-E3/45
DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明