BYV32E-200,127 [NXP]
BYV32E-200;
| 型号： | BYV32E-200,127 |
| 厂家： | 
NXP |
| 描述： | BYV32E-200 超快软恢复二极管 快速软恢复二极管 局域网 开关 |
| 文件： | 总9页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Rev. 04 — 27 February 2009
Product data sheet
1. Product profile
1.1 General description
Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
High reverse voltage surge capability
High thermal cycling performance
Low thermal resistance
Soft recovery characteristic minimizes
power consuming oscillations
Very low on-state loss
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max Unit
VRRM
IO(AV)
repetitive peak
reverse voltage
-
-
200
V
average output
current
square-wave pulse; δ = 0.5;
Tmb ≤ 115 °C; both diodes
conducting; see Figure 1;
see Figure 2
-
-
20
A
IRRM
repetitive peak
reverse current
tp = 2 µs; δ = 0.001
-
-
-
-
0.2
8
A
VESD
electrostatic
HBM; C = 250 pF; R = 1.5
kV
discharge voltage
kΩ; all pins
Dynamic characteristics
trr
reverse recovery
time
IF = 1 A; VR = 30 V;
dIF/dt = 100 A/µs;
Tj = 25 °C; ramp recovery;
see Figure 5
-
-
20
10
25
20
ns
ns
IR = 1 A; IF = 0.5 A;
Tj = 25 °C; step recovery;
measured at reverse current
= 0.25 A; see Figure 6
Static characteristics
VF forward voltage
IF = 8 A; Tj = 150 °C; see
Figure 4
-
0.72 0.85
V
BYV32E-200
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 200 V
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
A1
K
anode 1
mb
2
cathode
A1
A2
3
A2
K
anode 2
K
sym125
mb
mounting base; cathode
1
2 3
SOT78
( T O - 2 2 0 A B ; S C - 4 6 )
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BYV32E-200
TO-220AB;
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
BYV32E-200_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 February 2009
2 of 9
BYV32E-200
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 200 V
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
-
200
V
VRWM
crest working reverse
voltage
-
200
V
VR
reverse voltage
DC
-
-
200
20
V
A
IO(AV)
average output current square-wave pulse; δ = 0.5; Tmb ≤ 115 °C; both
diodes conducting; see Figure 1; see Figure 2
IFRM
IFSM
repetitive peak forward δ = 0.5; tp = 25 µs; Tmb ≤ 115 °C; per diode
current
-
-
-
-
-
20
A
A
A
A
A
non-repetitive peak
forward current
tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; per
diode
137
125
0.2
0.2
tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; per
diode
IRRM
IRSM
repetitive peak reverse δ = 0.001; tp = 2 µs
current
non-repetitive peak
reverse current
tp = 100 µs
Tstg
Tj
storage temperature
junction temperature
-40
150
150
8
°C
°C
kV
-
-
VESD
electrostatic discharge HBM; C = 250 pF; R = 1.5 kΩ; all pins
voltage
003aac978
003aac979
12
15
δ = 1
a = 1.57
P
(W)
P
(W)
tot
tot
1.9
0.5
2.2
8
4
0
10
2.8
0.2
4.0
0.1
5
0
0
4
8
12
0
5
10
15
I
(A)
F(AV)
I
(A)
F(AV)
Fig 1. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
BYV32E-200_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 February 2009
3 of 9
BYV32E-200
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 200 V
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from with heatsink compound; both diodes
-
-
1.6
K/W
junction to mounting
base
conducting
with heatsink compound; per diode; see
Figure 3
-
-
-
2.4
-
K/W
K/W
Rth(j-a)
thermal resistance from
junction to ambient
60
003aac980
10
Z
th(j-mb)
(K/W)
1
t
−1
−2
−3
p
10
10
10
P
δ =
T
t
t
p
T
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
10
t
p
(s)
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VF
forward voltage
IF = 20 A; Tj = 25 °C
-
-
-
-
1
1.15
0.85
0.6
V
IF = 8 A; Tj = 150 °C; see Figure 4
VR = 200 V; Tj = 100 °C
VR = 200 V; Tj = 25 °C
0.72
0.2
6
V
IR
reverse current
mA
µA
30
Dynamic characteristics
Qr
recovered charge
IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C
-
-
-
8
12.5
25
nC
ns
ns
trr
reverse recovery time
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
ramp recovery; Tj = 25 °C; see Figure 5
20
10
IF = 0.5 A; IR = 1 A; step recovery;
measured at reverse current = 0.25 A;
Tj = 25 °C; see Figure 6
20
VFR
forward recovery
voltage
IF = 1 A; dIF/dt = 10 A/µs; Tj = 25 °C; see
Figure 7
-
-
1
V
BYV32E-200_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 February 2009
4 of 9
BYV32E-200
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 200 V
003aac981
dl
F
32
I
F
dt
I
F
(A)
24
t
rr
time
25 %
(1) (2)
(3)
16
8
100 %
Q
r
I
I
RM
R
003aac562
0
0
0.4
0.8
1.2
1.6
V
F
(V)
Fig 5. Reverse recovery definitions; ramp recovery
Fig 4. Forward current as a function of forward
voltage
I
F
I
F
I
F
t
rr
time
time
0.25 x I
R
V
F
Q
r
V
FRM
I
R
V
F
I
R
003aac563
time
Fig 6. Reverse recovery definitions; step recovery
001aab912
Fig 7. Forward recovery definitions
BYV32E-200_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 February 2009
5 of 9
BYV32E-200
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 200 V
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
1
L
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig 8. Package outline SOT78 (TO-220AB)
BYV32E-200_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 February 2009
6 of 9
BYV32E-200
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 200 V
8. Revision history
Table 7.
Revision history
Document ID
BYV32E-200_4
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20090227
Product data sheet
-
BYV32E_SERIES_3
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Package outline updated.
• Type number BYV32E-200 separated from data sheet BYV32E_SERIES_3
BYV32E_SERIES_3
BYV32E_SERIES_2
BYV32EB_SERIES_1
20010301
19980701
19960801
Product specification
Product specification
Product specification
-
-
-
BYV32E_SERIES_2
BYV32EB_SERIES_1
-
BYV32E-200_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 February 2009
7 of 9
BYV32E-200
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 200 V
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
9.3 Disclaimers
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BYV32E-200_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 February 2009
8 of 9
BYV32E-200
NXP Semiconductors
Dual rugged ultrafast rectifier diode, 20 A, 200 V
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .6
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .7
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . . .8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .8
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . . .8
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 February 2009
Document identifier: BYV32E-200_4
相关型号：
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