BYV34G-600 [NXP]
Dual rectifier diode, ultrafast; 双整流器呃二极管，超快
| 型号： | BYV34G-600 |
| 厂家： | 
NXP |
| 描述： | Dual rectifier diode, ultrafast |
| 文件： | 总9页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYV34G-600
Dual rectifier diode, ultrafast
Rev. 01 — 25 February 2009
Product data sheet
1. Product profile
1.1 General description
Ultrafast, dual common cathode, epitaxial rectifier diode in a SOT226 (I2PAK), low-profile
plastic package.
1.2 Features
I Fast switching
I Low thermal resistance
I Soft recovery characteristic
I Low switching loss
I High thermal cycling performance
I Low forward voltage drop
1.3 Applications
I Output rectifiers in high frequency
I Discontinuous Current Mode (DCM)
switched-mode power supplies
Power Factor Correction (PFC)
1.4 Quick reference data
I VRRM ≤ 600 V
I VF ≤ 1.16 V
I IO(AV) ≤ 20 A
I trr ≤ 60 ns
2. Pinning information
Table 1.
Pinning
Pin
1
Description
anode 1
Simplified outline
Graphic symbol
mb
2
cathode
1
3
3
anode 2
2
sym084
mb
mounting base; cathode
1
2 3
SOT226 (I2PAK)
BYV34G-600
NXP Semiconductors
Dual rectifier diode, ultrafast
3. Ordering information
Table 2.
Ordering information
Type number Package
Name
Description
plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB
Version
BYV34G-600 I2PAK
SOT226
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
VRRM
VRWM
VR
repetitive peak reverse voltage
-
-
-
-
600
600
600
20
V
V
V
A
crest working reverse voltage
reverse voltage
DC; Tmb ≤ 138 °C
IO(AV)
average output current
square waveform; δ = 0.5; Tmb ≤ 107 °C; both
diodes conducting
IFRM
IFSM
repetitive peak forward current
tp = 25 µs square waveform; δ = 0.5;
-
20
A
T
mb ≤ 107 °C; per diode
non-repetitive peak forward current
tp = 10 ms; sinusoidal waveform; per diode
tp = 8.3 ms; sinusoidal waveform; per diode
-
-
120
132
A
A
Tstg
Tj
storage temperature
junction temperature
−40 +150 °C
150 °C
-
BYV34G-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2009
2 of 9
BYV34G-600
NXP Semiconductors
Dual rectifier diode, ultrafast
5. Thermal characteristics
Table 4.
Symbol Parameter
Rth(j-mb) thermal resistance from junction to
mounting base
Thermal characteristics
Conditions
Min
Typ
Max
Unit
with heatsink compound
per diode; see Figure 1
-
-
2.4
K/W
with heatsink compound;
both diodes conducting
-
-
-
1.6
-
K/W
K/W
Rth(j-a)
thermal resistance from junction to ambient in free air
60
001aag912
10
Z
th(j-mb)
(K/W)
1
−1
−2
−3
10
10
10
t
p
P
δ =
T
t
t
p
T
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
10
t
(s)
p
Fig 1. Transient thermal impedance from junction to mounting base per diode as a function of pulse width
BYV34G-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2009
3 of 9
BYV34G-600
NXP Semiconductors
Dual rectifier diode, ultrafast
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 10 A; Tj = 150 °C; see Figure 2
IF = 20 A
-
-
-
-
0.92
1.07
10
1.16
1.48
50
V
V
IR
reverse current
VR = 600 V
µA
mA
VR = 600 V; Tj = 100 °C
0.2
0.6
Dynamic characteristics
Qr
recovered charge
IF = 2 A to VR = 30 V; dIF/dt = 20 A/µs;
see Figure 3
-
-
40
50
70
60
nC
ns
trr
reverse recovery time
IF = 1 A to VR = 30 V;
dIF/dt = 100 A/µs; ramp recovery;
see Figure 3
IRM
peak reverse recovery IF = 10 A to VR = 30 V;
-
-
3
5
-
A
V
current
dIF/dt = 50 A/µs; Tj = 100 °C;
see Figure 3
VFR
forward recovery
voltage
IF = 10 A; dIF/dt = 10 A/µs;
see Figure 4
3.2
003aab485
30
25
20
15
IF
(A)
10
(1)
(2)
(3)
5
0
0
0.4
0.8
1.2
1.6
VF (V)
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 2. Forward current as a function of forward voltage
BYV34G-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2009
4 of 9
BYV34G-600
NXP Semiconductors
Dual rectifier diode, ultrafast
I
F
dl
F
I
F
dt
t
rr
time
time
25 %
V
F
V
FRM
100 %
Q
r
V
F
I
I
RM
R
time
003aac562
001aab912
Fig 3. Reverse recovery definitions
Fig 4. Forward recovery definitions
003aab484
003aab483
12
18
Ptot
a = 1.57
1.9
Ptot
δ = 1
(W)
(W)
15
10
2.2
0.5
2.8
8
6
4
2
0
12
9
4.0
0.2
0.1
6
3
0
0
3
6
9
0
5
10
15
IF(AV) (A)
IF(AV) (A)
IF(AV) = IF(RMS) × √δ
a = form factor = IF(RMS) / IF(AV)
Fig 5. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 6. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYV34G-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2009
5 of 9
BYV34G-600
NXP Semiconductors
Dual rectifier diode, ultrafast
7. Package outline
Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB
SOT226
A
A
E
D
1
1
mounting
base
D
L
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
D
max
D
A
b
c
E
UNIT
A
b
e
L
L
Q
1
1
1
1
4.5
4.1
1.40
1.27
0.85
0.60
1.3
1.0
0.7
0.4
1.6
1.2
10.3
9.7
15.0
13.5
3.30
2.79
2.6
2.2
mm
11
2.54
REFERENCES
EUROPEAN
ISSUE DATE
PROJECTION
OUTLINE
VERSION
IEC
JEDEC
JEITA
low-profile
3-lead TO-220AB
05-06-23
06-02-14
SOT226
Fig 7. Package outline SOT226 (low-profile 3-lead TO-220AB)
BYV34G-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2009
6 of 9
BYV34G-600
NXP Semiconductors
Dual rectifier diode, ultrafast
8. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BYV34G-600_1
20090225
Product data sheet
-
-
BYV34G-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2009
7 of 9
BYV34G-600
NXP Semiconductors
Dual rectifier diode, ultrafast
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BYV34G-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2009
8 of 9
BYV34G-600
NXP Semiconductors
Dual rectifier diode, ultrafast
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
9.1
9.2
9.3
9.4
10
11
Contact information. . . . . . . . . . . . . . . . . . . . . . 8
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 February 2009
Document identifier: BYV34G-600_1
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