BYV410-600,127 [NXP]

BYV410-600;


型号：	BYV410-600,127
厂家：	NXP
描述：	BYV410-600
文件：	总11页 (文件大小：171K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BYV410-600

O-220AB

Dual enhanced ultrafast power diode

Rev. 2 — 5 August 2011

Product data sheet

1. Product profile

1.1 General description

Dual enhanced ultrafast power diode in a SOT78 (TO-220AB) plastic package.

1.2 Features and benefits

 High thermal cycling performance

 Low on state losses

 Low thermal resistance

 Soft recovery characteristic minimizes

power consuming oscillations

1.3 Applications

 Dual mode (DCM and CCM) PFC

 Power Factor Correction (PFC) for

Interleaved Topology

1.4 Quick reference data

Table 1.

Symbol Parameter

V_RRMrepetitive peak reverse

voltage

Quick reference data

Conditions

Min Typ Max Unit

600

I_O(AV)

average output current square-wave pulse; δ = 0.5 ;

T_mb≤ 92 °C; both diodes

conducting;

see Figure 1; see Figure 2

Static characteristics

V_F

forward voltage

I_F= 10 A; T_j= 150 °C

1.3

1.4

1.9

2.1

I_F= 10 A; T_j= 25 °C;

see Figure 4

Dynamic characteristics

t_rr

reverse recovery time I_F= 1 A; V_R= 30 V;

dI_F/dt = 100 A/µs; T_j= 25 °C;

see Figure 5

Q_r

recovered charge

I_F= 1 A; V_R= 30 V;

dI_F/dt = 100 A/µs

BYV410-600

NXP Semiconductors

Dual enhanced ultrafast power diode

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

anode 1

cathode

anode 2

sym125

mounting base; cathode

2 3

SOT78 (TO-220AB)

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BYV410-600

TO-220AB

plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

BYV410-600

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Product data sheet

Rev. 2 — 5 August 2011

2 of 11

BYV410-600

NXP Semiconductors

Dual enhanced ultrafast power diode

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_RRM

V_RWM

V_R

Parameter

Conditions

Min

Max

600

Unit

repetitive peak reverse voltage

crest working reverse voltage

reverse voltage

I_O(AV)

average output current

square-wave pulse; δ = 0.5 ;

_mb≤ 92 °C; both diodes conducting;

see Figure 1; see Figure 2

I_FRM

I_FSM

repetitive peak forward current δ = 0.5 ; t_p= 25 µs; T_mb≤ 108 °C;

per diode

non-repetitive peak forward

current

t_p= 8.3 ms; sine-wave pulse;

_j(init)= 25 °C; per diode

132

120

t_p= 10 ms; sine-wave pulse;

T_j(init)= 25 °C; per diode

T_stg

T_j

storage temperature

junction temperature

-40

150

°C

003aad262

003aad263

tot

δ = 1

(W)

a = 180°

0.5

120

0.2

0.1

(A)

IF(AV) (A)

F(AV)

Fig 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

Fig 2. Forward power dissipation as a function of

average forward current; sinusoidal waveform;

maximum values

BYV410-600

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Product data sheet

Rev. 2 — 5 August 2011

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BYV410-600

NXP Semiconductors

Dual enhanced ultrafast power diode

5. Thermal characteristics

Table 5.

Symbol

R_th(j-mb)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from junction

to mounting base

with heatsink compound;

per diode; see Figure 3

2.4

K/W

with heatsink compound;

both diodes conducting

1.6

K/W

R_th(j-a)

thermal resistance from junction

to ambient

001aag912

th(j-mb)

(K/W)

−1

−2

−3

δ =

−6

−5

−4

−3

−2

−1

(s)

Fig 3. Transient thermal impedance from junction to mounting base per diode as a function of pulse width

BYV410-600

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Product data sheet

Rev. 2 — 5 August 2011

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BYV410-600

NXP Semiconductors

Dual enhanced ultrafast power diode

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_F

forward voltage

I_F= 10 A; T_j= 150 °C

I_F= 10 A; T_j= 25 °C; see Figure 4

V_R= 600 V

1.3

1.4

1.9

2.1

I_R

reverse current

µA

V_R= 600 V; T_j= 100 °C

1.5

Dynamic characteristics

Q_r

t_rr

recovered charge

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/µs

reverse recovery time I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/µs;

T_j= 25 °C; see Figure 5

I_RM

peak reverse recovery I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/µs;

1.4

3.2

1.9

current

see Figure 5

V_FR

forward recovery

voltage

I_F= 1 A; dI_F/dt = 100 A/µs; see Figure 6

003aad261

(A)

time

25 %

(1)

(2)

(3)

100 %

003aac562

(V)

Fig 4. Forward current as a function of forward

voltage

Fig 5. Reverse recovery definitions; ramp recovery

BYV410-600

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Product data sheet

Rev. 2 — 5 August 2011

5 of 11

BYV410-600

NXP Semiconductors

Dual enhanced ultrafast power diode

time

FRM

time

001aab912

Fig 6. Forward recovery definitions

BYV410-600

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Product data sheet

Rev. 2 — 5 August 2011

6 of 11

BYV410-600

NXP Semiconductors

Dual enhanced ultrafast power diode

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

SOT78

mounting

base

(1)

(2)

(3×)

(2)

(2×)

b(3×)

10 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

(2)

(1)

UNIT

max.

4.7

4.1

1.40

1.25

0.9

0.6

1.6

1.0

1.3

1.0

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0 3.30

12.8 2.79

3.8

3.5

3.0

2.7

2.6

2.2

2.54

3.0

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

JEITA

08-04-23

08-06-13

SOT78

SC-46

3-lead TO-220AB

Fig 7. Package outline SOT78 (TO-220AB)

BYV410-600

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Product data sheet

Rev. 2 — 5 August 2011

7 of 11

BYV410-600

NXP Semiconductors

Dual enhanced ultrafast power diode

8. Revision history

Table 7.

Revision history

Document ID

BYV410-600 v.2

Modifications:

BYV410-600_1

Release date

Data sheet status

Change notice

Supersedes

20110805

Product data sheet

BYV410-600_1

• Various changes to content.

20090629 Product data sheet

BYV410-600

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Product data sheet

Rev. 2 — 5 August 2011

8 of 11

BYV410-600

NXP Semiconductors

Dual enhanced ultrafast power diode

9. Legal information

9.1 Data sheet status

Document status ^{[1] [2]}

Product status ^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term 'short data sheet' is explained in section "Definitions".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

Right to make changes — NXP Semiconductors reserves the right to make

9.2 Definitions

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

Customers are responsible for the design and operation of their applications

and products using NXP Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

BYV410-600

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 2 — 5 August 2011

9 of 11

BYV410-600

NXP Semiconductors

Dual enhanced ultrafast power diode

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

non-automotive qualified products in automotive equipment or applications.

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

BYV410-600

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Product data sheet

Rev. 2 — 5 August 2011

10 of 11

BYV410-600

NXP Semiconductors

Dual enhanced ultrafast power diode

11. Contents

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

Thermal characteristics . . . . . . . . . . . . . . . . . . .4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7

Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .8

Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

9.1

9.2

9.3

9.4

Contact information. . . . . . . . . . . . . . . . . . . . . .10

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 5 August 2011

Document identifier: BYV410-600

BYV410-600,127 [NXP]

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