BYV72 [NXP]
DIODE 30 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode;
| 型号： | BYV72 |
| 厂家： | 
NXP |
| 描述： | DIODE 30 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode 二极管 |
| 文件： | 总6页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72EF series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
VR = 150 V/ 200 V
a1
1
a2
3
VF ≤ 0.9 V
IO(AV) = 20 A
IRRM = 0.2 A
trr ≤ 28 ns
k
2
GENERAL DESCRIPTION
PINNING
SOT199
Dual, ultra-fast, epitaxial rectifier
diodes intended for use as output
rectifiersinhighfrequencyswitched
mode power supplies.
PIN
DESCRIPTION
anode 1 (a)
cathode (k)
case
1
2
The BYV72EF series is supplied in
the conventional leaded SOT199
package.
3
anode 2 (a)
isolated
tab
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
BYV72EF
-150
150
150
150
-200
200
200
200
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
-
-
-
V
V
V
Ths ≤ 125˚C
IO(AV)
IFRM
IFSM
Average rectified output current square wave
-
20
30
A
(both diodes conducting)1
δ = 0.5; Ths ≤ 78 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
A
per diode
Non-repetitive peak forward
current per diode
Ths ≤ 78 ˚C
t = 10 ms
t = 8.3 ms
-
-
150
160
A
A
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
IRRM
IRSM
-
-
0.2
0.2
A
A
per diode
Non-repetitive peak reverse
current per diode
tp = 100 µs
Tstg
Tj
Storage temperature
Operating junction temperature
-40
-
150
150
˚C
˚C
1 Neglecting switching and reverse current losses.
July 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72EF series
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
-
8
kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
three terminals to external
heatsink
-
-
2500
V
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Thermal resistance junction to both diodes conducting
heatsink
with heatsink compound
without heatsink compound
per diode
with heatsink compound
without heatsink compound
-
-
-
-
4.0
8.0
K/W
K/W
-
-
-
-
-
35
5.0
9.0
-
K/W
K/W
K/W
Rth j-a
Thermal resistance junction to in free air
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 15 A; Tj = 150˚C
IF = 15 A
-
-
-
-
-
-
-
0.83
0.95
1.00
0.5
10
0.90
1.05
1.20
1
V
V
IF = 30 A
V
IR
Reverse current
VR = VRWM; Tj = 100 ˚C
VR = VRWM
mA
µA
nC
ns
100
15
Qs
trr1
Reverse recovery charge
Reverse recovery time
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
6
20
28
trr2
Vfr
Reverse recovery time
Forward recovery voltage
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 1 A; dIF/dt = 10 A/µs
-
-
13
1
22
-
ns
V
July 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72EF series
dI
0.5A
IF
I
F
F
dt
t
0A
rr
time
I
= 0.25A
rec
IR
Q
100%
10%
s
trr2
I
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
PF / W
B
Ths(max) / C
D = 1.0
I
25
20
15
10
5
25
50
F
F
Vo = 0.7050 V
Rs = 0.0130 Ohms
0.5
75
0.2
0.1
time
100
V
t
p
t
p
I
D =
T
125
150
V
fr
t
T
V
F
0
0
5
10
IF(AV) / A
15
20
25
time
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Ths(max) / C
PF / W
R
20
15
10
5
50
Vo = 0.705 V
Rs = 0.013 Ohms
a = 1.57
75
1.9
2.2
D.U.T.
2.8
Voltage Pulse Source
4
100
Current
shunt
125
150
to ’scope
0
0
5
10
15
IF(AV) / A
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
July 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72EF series
trr / ns
1000
Qs / nC
100
IF=20A
10A
5A
IF=20A
2A
100
10
1A
10
IF=1A
1.0
1
1
10
dIF/dt (A/us)
100
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Transient thermal impedance, Zth j-hs (K/W)
10
Irrm / A
10
IF=20A
1
1
IF=1A
0.1
0.1
p
t
p
t
P
0.01
D
D =
T
t
T
0.001
0.01
1us
10us 100us 1ms
10ms 100ms
1s
10s
10
100
1
pulse width, tp (s)
-dIF/dt (A/us)
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Zth j-hs = f(tp).
IF / A
50
Tj = 150 C
40
Tj = 25 C
30
20
typ
10
max
1.0
0
0
0.5
1.5
VF / V
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
July 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72EF series
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
15.3 max
5.2 max
3.1
3.3
0.7
3.2
7.3
o
45
6.2
5.8
21.5
max
seating
plane
3.5 max
not tinned
3.5
15.7
min
1
2
3
1.2
1.0
0.7 max
2.0
2.1 max
M
0.4
5.45
5.45
Fig.12. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72EF series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
6
Rev 1.100
相关型号：
©2020 ICPDF网 联系我们和版权申明