BYV98 [NXP]

Fast soft-recovery rectifier; 快速软恢复整流器
BYV98
型号: BYV98
厂家: NXP    NXP
描述:

Fast soft-recovery rectifier
快速软恢复整流器

文件: 总8页 (文件大小:60K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BYV98  
Fast soft-recovery rectifier  
1996 Jun 07  
Product specification  
Supersedes data of May 1993  
Philips Semiconductors  
Product specification  
Fast soft-recovery rectifier  
BYV98  
construction. This package is  
FEATURES  
DESCRIPTION  
hermetically sealed and fatigue free  
as coefficients of expansion of all  
used parts are matched.  
Glass passivated  
Rugged glass SOD57 package,  
using a high temperature alloyed  
High maximum operating  
temperature  
Low leakage current  
Excellent stability  
k
a
Available in ammo-pack.  
MAM047  
Fig.1 Simplified outline (SOD57) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
2100  
UNIT  
VRSM  
VRRM  
IF(AV)  
non-repetitive peak reverse voltage  
repetitive peak reverse voltage  
average forward current  
V
V
A
2000  
1.00  
Ttp = 55 °C; lead length = 10 mm  
see Fig. 2;  
averaged over any 20 ms period;  
see also Fig. 6  
IF(AV)  
average forward current  
Tamb = 60 °C; PCB mounting (see  
Fig.11); see Fig. 3;  
0.43  
A
averaged over any 20 ms period;  
see also Fig. 6  
IFRM  
repetitive peak forward current  
Ttp = 55 °C; see Fig. 4  
Tamb = 60 °C; see Fig. 5  
9.0  
4.5  
15  
A
A
A
IFSM  
non-repetitive peak forward current  
t = 10 ms half sine wave;  
Tj = Tj max prior to surge;  
VR = VRRMmax  
Tstg  
Tj  
storage temperature  
junction temperature  
65  
65  
+175  
+175  
°C  
°C  
see Fig.7  
1996 Jun 07  
2
Philips Semiconductors  
Product specification  
Fast soft-recovery rectifier  
BYV98  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
MIN.  
TYP.  
MAX.  
2.2  
2.4  
5
UNIT  
VF  
IF = 2 A; Tj = Tj max; see Fig. 8  
IF = 2 A; see Fig. 8  
V
V
IR  
reverse current  
VR = VRRMmax; see Fig. 9  
µA  
µA  
VR = VRRMmax; Tj = 125 °C;  
50  
see Fig. 9  
trr  
reverse recovery time  
diode capacitance  
when switched from IF = 0.5 A  
to IR = 1 A; measured at  
IR = 0.25 A; see Fig. 12  
300  
ns  
Cd  
f = 1 MHz; VR = 0 V; see Fig 10  
30  
pF  
when switched from IF = 1 A to  
VR 30 V and dIF/dt = 1 A/µs;  
see Fig.13  
5
A/µs  
maximum slope of  
reverse recovery current  
dIR  
--------  
dt  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-tp  
Rth j-a  
thermal resistance from junction to tie-point  
thermal resistance from junction to ambient  
lead length = 10 mm  
note 1  
46  
K/W  
K/W  
100  
Note  
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.11.  
For more information please refer to the “General Part of associated Handbook”.  
1996 Jun 07  
3
Philips Semiconductors  
Product specification  
Fast soft-recovery rectifier  
BYV98  
GRAPHICAL DATA  
MGC601  
MGC600  
1.6  
0.6  
handbook, halfpage  
handbook, halfpage  
I
F(AV)  
I
F(AV)  
(A)  
(A)  
1.2  
0.4  
0.8  
0.4  
0
0.2  
0
0
0
100  
200  
100  
200  
o
o
T
( C)  
T
( C)  
amb  
tp  
a = 1.42; VR = VRRMmax; δ = 0.5.  
Device mounted as shown in Fig.11.  
Switched mode application.  
a = 1.42; VR = VRRMmax; δ = 0.5.  
Switched mode application.  
Fig.2 Maximum permissible average forward  
current as a function of tie-point temperature  
(including losses due to reverse leakage).  
Fig.3 Maximum permissible average forward  
current as a function of ambient temperature  
(including losses due to reverse leakage).  
MGC603  
10  
δ =  
I
0.05  
FRM  
(A)  
8
6
4
2
0
0.1  
0.2  
0.5  
1.0  
–2  
–1  
2
3
4
10  
10  
1
10  
10  
10  
10  
t
(ms)  
p
Ttp = 55°C; Rth j-tp = 46 K/W.  
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 2000 V.  
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
1996 Jun 07  
4
Philips Semiconductors  
Product specification  
Fast soft-recovery rectifier  
BYV98  
MGC604  
5
δ =  
0.05  
I
FRM  
(A)  
4
3
2
1
0
0.1  
0.2  
0.5  
1.0  
–2  
–1  
2
3
4
10  
10  
1
10  
10  
10  
10  
t
(ms)  
p
Tamb = 60 °C; Rth j-a = 100 K/W.  
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 2000 V.  
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
MGC599  
MEA524 - 1  
3
200  
handbook, halfpage  
handbook, halfpage  
a=3  
2.5  
2
1.57  
P
T
j
(W)  
o
(
C)  
1.42  
2
1
100  
0
0
0
0
1000  
2000  
0.5  
1.0  
V
(V)  
I
(A)  
R
F(AV)  
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.  
Solid line = VRRM; δ = 0.1.  
Dotted line = VRRM; δ = 0.5.  
Fig.6 Maximum steady state power dissipation  
(forward plus leakage current losses,  
excluding switching losses) as a function  
of average forward current.  
Fig.7 Maximum permissible junction temperature  
as a function of reverse voltage.  
1996 Jun 07  
5
Philips Semiconductors  
Product specification  
Fast soft-recovery rectifier  
BYV98  
MEA523  
MLC319  
3
10  
10  
handbook, halfpage  
handbook, halfpage  
I
F
I
(A)  
R
8
(µA)  
2
10  
6
4
10  
2
0
1
0
100  
200  
o
0
1
2
3
4
5
T ( C)  
j
V
(V)  
F
Dotted line: Tj = 175 °C.  
Solid line: Tj = 25 °C.  
VR = VRRMmax  
.
Fig.9 Reverse current as a function of junction  
temperature; maximum values.  
Fig.8 Forward current as a function of forward  
voltage; maximum values.  
MGC602  
2
10  
50  
handbook, halfpage  
handbook, halfpage  
25  
C
d
(pF)  
7
50  
10  
2
3
1
3
2
MGA200  
1
10  
10  
10  
V
(V)  
R
f = 1 MHz; Tj = 25 °C.  
Dimensions in mm.  
Fig.10 Diode capacitance as a function of reverse  
voltage; typical values.  
Fig.11 Device mounted on a printed-circuit board.  
1996 Jun 07  
6
Philips Semiconductors  
Product specification  
Fast soft-recovery rectifier  
BYV98  
DUT  
I
F
(A)  
+
0.5  
t
rr  
25 V  
10 Ω  
1 Ω  
50 Ω  
0
0.25  
0.5  
t
I
R
(A)  
MAM057  
1
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns.  
Source impedance: 50 ; tr 15 ns.  
Fig.12 Test circuit and reverse recovery time waveform and definition.  
I
ndbook, halfpage  
F
dI  
F
dt  
t
rr  
t
10%  
dI  
R
dt  
100%  
I
R
MGC499  
Fig.13 Reverse recovery definitions.  
1996 Jun 07  
7
Philips Semiconductors  
Product specification  
Fast soft-recovery rectifier  
BYV98  
PACKAGE OUTLINE  
k
a
0.81  
max  
3.81  
max  
4.57  
max  
MBC880  
28 min  
28 min  
Dimensions in mm.  
The marking band indicates the cathode.  
Fig.14 SOD57.  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 Jun 07  
8

相关型号:

BYV98-050-TAP

DIODE 4 A, 50 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
VISHAY

BYV98-050-TR

DIODE 4 A, 50 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
VISHAY

BYV98-100

Very Fast Soft-Recovery Rectifiers
VISHAY

BYV98-100-TAP

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 100V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
VISHAY

BYV98-100-TR

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 100V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
VISHAY

BYV98-150

Very Fast Soft-Recovery Rectifiers
VISHAY

BYV98-150-TAP

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 150V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
VISHAY

BYV98-150-TR

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 150V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
VISHAY

BYV98-200

Very Fast Soft-Recovery Rectifiers
VISHAY

BYV98-200-TAP

DIODE 4 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
VISHAY

BYV98-200-TR

DIODE 4 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
VISHAY

BYV98-50

Very Fast Soft-Recovery Rectifiers
VISHAY