BYW29-150 [NXP]
Rectifier diodes ultrafast; 整流二极管超快
| 型号： | BYW29-150 |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes ultrafast |
| 文件： | 总6页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high efficiency
rectifier diodes in a plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times and soft
recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
SYMBOL
PARAMETER
MAX. MAX. MAX. UNIT
BYW29-
100
100
150
150
200
200
VRRM
Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
V
VF
0.895 0.895 0.895
V
A
ns
IF(AV)
8
8
8
trr
25
25
25
PINNING - TO220AC
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
cathode (k)
anode (a)
tab
a
k
2
tab cathode (k)
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-100
100
100
100
-150
150
150
150
-200
200
200
200
VRRM
VRWM
VR
Repetitive peak reverse voltage
-
-
-
V
V
V
Crest working reverse voltage
Continuous reverse voltage
IF(AV)
Average forward current1
square wave; δ = 0.5;
-
8
A
Tmb ≤ 128 ˚C
sinusoidal; a = 1.57;
mb ≤ 130 ˚C
-
7.3
A
T
IF(RMS)
IFRM
RMS forward current
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
-
11.3
16
A
A
T
mb ≤ 128 ˚C
IFSM
Non-repetitive peak forward
current
t = 10 ms
-
-
80
88
A
A
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
t = 10 ms
I2t
Tstg
Tj
I2t for fusing
Storage temperature
Operating junction temperature
-
-40
-
32
150
150
A2s
˚C
˚C
1 Neglecting switching and reverse current losses
October 1994
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to in free air
ambient
-
-
2.7
K/W
Rth j-a
-
60
-
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 8 A; Tj = 150˚C
IF = 8 A
-
-
-
-
-
0.80 0.895
V
V
0.92
1.1
0.3
2
1.05
1.3
0.6
10
IF = 20 A
V
IR
Reverse current
VR = VRWM; Tj = 100 ˚C
VR = VRWM
mA
µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Qs
trr
Reverse recovery charge
Reverse recovery time
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V;
-
-
4
11
25
nC
ns
20
-dIF/dt = 100 A/µs
Irrm
Vfr
Peak reverse recovery current IF = 10 A; VR ≥ 30 V; Tj = 100 ˚C;
-dIF/dt = 50 A/µs
Forward recovery voltage
-
-
1
1
2
-
A
V
IF = 1 A; dIF/dt = 10 A/µs
October 1994
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29 series
Tmb(max) / C
PF / W
Vo = 0.791 V
dI
8
7
6
5
4
3
2
1
0
128.4
I
a = 1.57
F
F
Rs = 0.013 Ohms
131.1
1.9
dt
2.2
133.8
t
rr
2.8
136.5
139.2
time
4
141.9
Q
s
100%
144.6
147.3
150
10%
I
I
R
rrm
0
1
2
3
4
5
6
7
8
IF(AV) / A
Fig.1. Definition of trr, Qs and Irrm
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
trr / ns
I
F
1000
100
10
IF=10A
time
IF=1A
V
F
V
fr
V
F
1
1
10
100
time
dIF/dt (A/us)
Fig.2. Definition of Vfr
Fig.5. Maximum trr at Tj = 25 ˚C.
trr / ns
Tmb(max) / C
D = 1.0
PF / W
Vo = 0.791 V
12
10
8
120.3
123
1000
100
10
Rs = 0.013 Ohms
IF=10A
IF=1A
0.5
128.4
133.8
139.2
0.2
6
0.1
4
t
p
t
p
I
D =
T
2
144.6
150
t
T
0
1
0
2
4
6
8
10
12
1
10
dIF/dt (A/us)
100
IF(AV) / A
Fig.3. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Fig.6. Maximum trr at Tj = 100 ˚C.
October 1994
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29 series
Irrm / A
10
Qs / nC
100
IF=10A
5A
IF=10A
2A
1
1A
IF=1A
10
0.1
0.01
1
1.0
1.0
10
-dIF/dt (A/us)
100
10
-dIF/dt (A/us)
100
Fig.7. Maximum Irrm at Tj = 25 ˚C.
Fig.10. Maximum Qs at Tj = 25 ˚C.
Irrm / A
Zth (K/W)
10
1
10
IF=10A
1
0.1
IF=1A
0.1
0.01
t
p
P
D
t
0.01
1
10
100
10 us
1 ms
0.1 s
10 s
-dIF/dt (A/us)
tp / s
Fig.8. Maximum Irrm at Tj = 100 ˚C.
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
IF / A
30
20
10
0
Tj=150 C
Tj=25 C
typ
max
0.5
1.5
0
1
2
VF / V
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
October 1994
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
(2x)
1
2
0,9 max (2x)
0,6
2,4
5,08
Fig.12. TO220AC; pin 1 connected to mounting base.
Notes
1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1994
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1994
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1994
6
Rev 1.100
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