BYW29EB-150 [NXP]
Rectifier diodes ultrafast, rugged; 整流器呃二极管超快，坚固耐用
| 型号： | BYW29EB-150 |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes ultrafast, rugged |
| 文件： | 总8页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
FEATURES
SYMBOL
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.895 V
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
k
tab
a
3
IF(AV) = 8 A
IRRM = 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes intendedfor useas output rectifiers inhigh frequency switchedmode powersupplies.
The BYW29EB series is supplied in the SOT404 surface mounting package.
The BYW29ED series is supplied in the SOT428 surface mounting package.
PINNING
SOT404
SOT428
PIN
DESCRIPTION
no connection
cathode1
tab
tab
1
2
3
anode
2
2
1
3
1
3
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS
BYW29EB/ BYW29ED
MIN.
MAX.
UNIT
-150
-200
VRRM
Peak repetitive reverse
-
-
150
150
150
200
200
200
V
V
voltage
VRWM
Working peak reverse
voltage
VR
Continuous reverse voltage
-
-
V
A
IF(AV)
Average rectified forward
current
square wave; δ = 0.5; Tmb ≤ 128 ˚C
square wave; δ = 0.5; Tmb ≤ 128 ˚C
8
IFRM
IFSM
Repetitive peak forward
current
-
16
A
Non-repetitive peak forward t = 10 ms
current
-
-
80
88
A
A
t = 8.3 ms
sinusoidal; with reapplied VRRM(max)
tp = 2 µs; δ = 0.001
IRRM
IRSM
Tj
Peak repetitive reverse
surge current
-
0.2
0.2
A
A
Peak non-repetitive reverse tp = 100 µs
surge current
-
-
Operating junction
150
150
˚C
˚C
temperature
Tstg
Storage temperature
- 40
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
November 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
-
8
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
-
-
-
2.7
-
K/W
K/W
Thermal resistance junction SOT404 and SOT428 packages, pcb
50
to ambient
mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 8 A; Tj = 150˚C
-
-
-
-
-
-
0.8 0.895
0.92 1.05
V
V
IF = 8 A
IF = 20 A
VR = VRWM
VR = VRWM; Tj = 100˚C
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 1 A; dIF/dt = 10 A/µs
1.1
2
1.3
10
0.6
11
25
20
-
V
IR
Reverse current
µA
mA
nC
ns
ns
V
0.2
4
20
15
1
Qrr
trr1
trr2
Vfr
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
-
-
November 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
dI
0.5A
IF
I
F
F
dt
t
0A
rr
time
I
= 0.25A
rec
IR
Q
100%
10%
s
trr2
I
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
Tmb(max) / C
D = 1.0
PF / W
Vo = 0.791 V
I
108
115
122
129
136
12
F
F
Rs = 0.013 Ohms
10
8
0.5
time
0.2
6
0.1
V
4
t
p
t
p
I
D =
10
T
V
143
150
2
fr
t
T
V
F
0
0
2
4
6
8
12
time
IF(AV) / A
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Tmb(max) / C
a = 1.57
PF / W
Vo = 0.791 V
R
8
7
6
5
4
3
2
1
0
122
Rs = 0.013 Ohms
125.5
129
1.9
2.2
D.U.T.
2.8
132.5
136
Voltage Pulse Source
4
139.5
143
Current
shunt
to ’scope
146.5
150
0
1
2
3
4
5
6
7
8
IF(AV) / A
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
November 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
trr / ns
1000
Qs / nC
100
IF=10A
5A
2A
IF=10A
100
10
1A
10
IF=1A
1.0
1
1
1.0
10
100
10
dIF/dt (A/us)
100
-dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C.
Fig.10. Maximum Qs at Tj = 25 ˚C.
Transient thermal impedance, Zth j-mb (K/W)
Irrm / A
10
10
1
IF=10A
1
0.1
IF=1A
0.1
0.01
p
t
p
t
P
0.01
D
D =
T
t
T
0.001
1us
10us 100us 1ms
10ms 100ms
pulse width, tp (s)
1s
10s
10
100
1
-dIF/dt (A/us)
Fig.8. Maximum Irrm at Tj = 25 ˚C.
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
IF / A
30
20
10
0
Tj=150 C
Tj=25 C
typ
max
0.5
1.5
0
1
2
VF / V
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
November 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
4.5 max
1.4 max
10.3 max
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.12. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.13. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
November 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
seating plane
2.38 max
0.93 max
1.1
5.4
6.73 max
tab
4 min
4.6
6.22 max
0.5 min
10.4 max
0.5
2
0.3
0.5
3
1
0.8 max
(x2)
2.285 (x2)
Fig.14. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
2.5
1.5
4.57
Fig.15. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
November 1998
6
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1998
7
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1998
8
Rev 1.300
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