BYW55T/R [NXP]
SILICON, RECTIFIER DIODE;
| 型号： | BYW55T/R |
| 厂家： | 
NXP |
| 描述： | SILICON, RECTIFIER DIODE 局域网 二极管 |
| 文件： | 总9页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BYW54 to BYW56
Controlled avalanche rectifiers
1996 Oct 03
Product specification
Supersedes data of 1996 Jun 11
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYW54 to BYW56
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass package, using a high
temperature alloyed construction.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
k
a
MAM047
• Guaranteed avalanche energy
absorption capability
Fig.1 Simplified outline (SOD57) and symbol.
• Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYW54
−
−
−
600
800
V
V
V
BYW55
BYW56
1000
VRWM
crest working reverse voltage
BYW54
−
−
−
600
800
V
V
V
BYW55
BYW56
1000
VR
continuous reverse voltage
BYW54
−
−
−
−
600
800
V
V
V
A
BYW55
BYW56
1000
2.0
IF(AV)
average forward current
Ttp = 45 °C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
−
0.8
A
Tamb = 80 °C; PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave
−
−
50
20
A
ERSM
non-repetitive peak reverse avalanche L = 120 mH; Tj = Tj max prior to
mJ
energy
surge; inductive load switched off
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
see Fig.5
1996 Oct 03
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYW54 to BYW56
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
0.8
UNIT
VF
−
−
−
−
V
V
IF = 1 A; Tj = Tj max; see Fig.6
IF = 1 A; see Fig.6
IR = 0.1 mA
1.0
V(BR)R
reverse avalanche
breakdown voltage
BYW54
BYW55
650
900
1100
−
−
−
−
−
−
−
−
V
V
V
BYW56
−
IR
reverse current
1
µA
µA
VR = VRRMmax; see Fig.7
−
150
VR = VRRMmax; Tj = 165 °C;
see Fig.7
trr
reverse recovery time
diode capacitance
−
−
3
−
−
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.10
µs
Cd
50
VR = 0 V; f = 1 MHz; see Fig.8
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
46
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
K/W
K/W
100
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the “General Part of associated Handbook”.
1996 Oct 03
3
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYW54 to BYW56
GRAPHICAL DATA
MBG044
MBG054
3
1.6
handbook, halfpage
handbook, halfpage
I
F(AV)
(A)
I
F(AV)
(A)
1.2
2
0.8
0.4
1
0
0
0
0
40
80
120
160
T
200
(°C)
40
80
120
160
T
200
(°C)
tp
amb
a = 1.57; VR = VRRMmax; δ = 0.5; lead length 10 mm.
a = 1.57; VR = VRRMmax; δ = 0.5; device mounted as shown in Fig.9.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC745
MBH387
200
4
handbook, halfpage
P
(W)
T
j
(°C)
3
1.42
1.57
2
2.5
100
2
1
0
54
55
56
a = 3
0
0
400
800
1200
0
1
2
3
V
(V)
R
I
(A)
F(AV)
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
1996 Oct 03
4
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYW54 to BYW56
MGC735
MGC734
3
15
10
handbook, halfpage
handbook, halfpage
I
I
R
F
(A)
(µA)
2
10
10
max
10
1
5
−1
0
0
10
1
2
0
40
80
120
160
T ( C)
200
V
(V)
o
F
j
Solid line: Tj = 25 °C.
Dotted line: Tj = Tj max
.
VR = VRRMmax
.
Fig.6 Forward current as a function of forward
voltage; maximum values.
Fig.7 Reverse current as a function of junction
temperature; maximum values.
MBG031
2
10
handbook, halfpage
50
handbook, halfpage
25
C
d
(pF)
7
50
10
2
3
1
2
1
10
10
V
(V)
R
MGA200
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 Oct 03
5
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYW54 to BYW56
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.10 Test circuit and reverse recovery time waveform and definition.
1996 Oct 03
6
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYW54 to BYW56
PACKAGE OUTLINE
k
a
0.81
max
3.81
max
4.57
max
MBC880
28 min
28 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.11 SOD57.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 03
7
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Rugged glass package, using a high temperature alloyed construction.
Communications
PC/PC-peripherals
This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
Cross reference
Models
Features
Packages
Application notes
Selection guides
Other technical documentation
End of Life information
Datahandbook system
l Glass passivated
l High maximum operating temperature
l Low leakage current
l Excellent stability
l Guaranteed avalanche energy absorption capability
l Available in ammo-pack.
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BYW54 to BYW56
BYW54 to BYW56
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BYW54 to BYW56 Controlled avalanche rectifiers
03-Oct-96
Product
Specification
14
46
Products, packages, availability and ordering
North American
Partnumber
Order code
(12nc)
Partnumber
BYW54
marking/packing
package device status buy online
SOD57 Full production
SOD57 Full production
SOD57 Full production
SOD57 Full production
SOD57 Full production
SOD57 Full production
SOD57 Full production
Standard Marking * Reel Pack, Axial,
Standard
BYW54 T/R
BYW55 T/R
BYW56 T/R
BYW56 AMO
9333 636 10113
9333 636 10133
9333 636 20113
9333 636 20133
9333 636 30113
9333 636 30133
9333 636 30163
Standard Marking * Ammopack, Axial,
52mm
Standard Marking * Reel Pack, Axial,
Standard
BYW55
BYW56
Standard Marking * Ammopack, Axial,
52mm
Standard Marking * Reel Pack, Axial,
Standard
Standard Marking * Ammopack, Axial,
52mm
Standard Marking * Multi Pack, Ammo,
Axial, 52mm
Please read information about some discontinued variants of this product.
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Copyright © 2000
Royal Philips Electronics
All rights reserved.
Terms and conditions.
相关型号：
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Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 1000V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
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