BZB100A,115 [NXP]

BZB100A - Bidirectional Zener diode SOD 2-Pin;
BZB100A,115
型号: BZB100A,115
厂家: NXP    NXP
描述:

BZB100A - Bidirectional Zener diode SOD 2-Pin

测试 光电二极管
文件: 总10页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BZB100A  
Bidirectional Zener diode  
Rev. 02 — 24 June 2008  
Product data sheet  
1. Product profile  
1.1 General description  
Bidirectional Zener diode in a SOD323 (SC-76) very small Surface-Mounted  
Device (SMD) plastic package.  
1.2 Features  
I Non-repetitive peak reverse power dissipation: PZSM 30 W  
I Bidirectional configuration  
I Small plastic package suitable for surface-mounted design  
I AEC-Q101 qualified  
1.3 Applications  
I General regulation functions  
I Overvoltage protection for ElectroLuminescent (EL) driver circuits  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Per device  
Conditions  
Min  
Typ  
Max  
Unit  
VZ  
working voltage  
IZ = 1 mA  
95  
-
-
-
105  
V
A
[1]  
IZSM  
non-repetitive peak reverse  
current  
0.23  
[1] tp = 100 µs; square wave; Tj = 25 °C prior to surge  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
Simplified outline  
Graphic symbol  
cathode (diode 1)  
cathode (diode 2)  
1
2
1
2
2
006aab041  
 
 
 
 
 
 
 
 
BZB100A  
NXP Semiconductors  
Bidirectional Zener diode  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
BZB100A  
SC-76  
plastic surface-mounted package; 2 leads  
SOD323  
4. Marking  
Table 4.  
Marking codes  
Type number  
Marking code  
BZB100A  
AT  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Per device  
IZSM  
Parameter  
Conditions  
Min  
Max  
Unit  
[1]  
non-repetitive peak reverse  
current  
-
0.23  
A
[1]  
[2]  
[3]  
[4]  
[5]  
PZSM  
non-repetitive peak reverse  
power dissipation  
-
30  
W
-
75  
W
Ptot  
total power dissipation  
Tamb 25 °C  
-
300  
540  
830  
150  
+150  
+150  
mW  
mW  
mW  
°C  
-
-
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
Tamb  
Tstg  
55  
65  
°C  
°C  
[1] tp = 100 µs; square wave; Tj = 25 °C prior to surge  
[2] tp = 10 µs; square wave; Tj = 25 °C prior to surge  
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.  
BZB100A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 24 June 2008  
2 of 10  
 
 
 
 
 
 
 
 
BZB100A  
NXP Semiconductors  
Bidirectional Zener diode  
006aab042  
1.0  
P
tot  
(W)  
(1)  
0.8  
0.6  
0.4  
0.2  
0
(2)  
(3)  
75  
25  
25  
75  
125  
175  
(°C)  
T
amb  
(1) Ceramic PCB, Al2O3, standard footprint  
(2) FR4 PCB, mounting pad for cathode 1 cm2  
(3) FR4 PCB, standard footprint  
Fig 1. Power derating curves  
6. Thermal characteristics  
Table 6.  
Thermal characteristics  
Symbol  
Per device  
Rth(j-a)  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
[1]  
thermal resistance from  
junction to ambient  
in free air  
-
-
-
-
-
-
-
-
415  
230  
150  
90  
K/W  
K/W  
K/W  
K/W  
[2]  
[3]  
[4]  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.  
[4] Soldering point of cathode tab.  
BZB100A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 24 June 2008  
3 of 10  
 
 
 
 
 
 
BZB100A  
NXP Semiconductors  
Bidirectional Zener diode  
7. Characteristics  
Table 7.  
Characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
Per device  
VZ  
rdif  
IR  
working voltage  
IZ = 1 mA  
IZ = 1 mA  
VR = 76 V  
IZ = 1 mA  
95  
-
-
105  
700  
V
differential resistance  
reverse current  
-
-
-
0.05 µA  
SZ  
Cd  
temperature coefficient  
diode capacitance  
-
123  
-
-
mV/K  
pF  
f = 1 MHz;  
VR = 0 V  
-
10  
006aab043  
006aab044  
3
2
10  
150  
S
Z
(mV/K)  
P
ZSM  
(W)  
140  
10  
130  
120  
110  
100  
10  
1
10  
5  
4  
3  
2  
10  
10  
10  
0
1
2
3
4
5
t
(s)  
I (mA)  
Z
p
Tj = 25 °C (prior to surge)  
Tj = 25 °C to 150 °C  
Fig 2. Non-repetitive peak reverse power dissipation  
as a function of pulse duration; maximum  
values  
Fig 3. Temperature coefficient as a function of  
working current; typical values  
BZB100A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 24 June 2008  
4 of 10  
 
BZB100A  
NXP Semiconductors  
Bidirectional Zener diode  
006aab045  
2  
3  
4  
5  
6  
7  
8  
9  
10  
I
Z
(A)  
10  
10  
10  
10  
10  
10  
10  
80  
90  
100  
110  
120  
V
(V)  
Z
Tj = 25 °C  
Fig 4. Working current as a function of working voltage; typical values  
8. Application information  
High-voltage Zener diodes can be used as overvoltage protection diodes for Integrated  
Circuits (IC) due to their ability to cut off the applied voltage at a well-defined value. One  
important application is the protection of EL driver circuits where a driver IC is connected  
to an EL foil. Since both the foil as well as the IC are sensitive against voltage overstress,  
it is necessary to install an additional protection device in the circuit. Commonly, a  
peak-to-peak voltage of 220 V should not be exceeded, such that two 100 V diodes in  
bidirectional configuration are used.  
CHF  
CHF  
CLF  
E
V+  
L+  
V
BAT  
1
2
3
4
5
10  
9
CLF  
R
enable  
VO  
L−  
ENABLE  
DRIVER IC  
8
L
n.c.  
GND  
7
n.c.  
6
BZB100A  
EL LAMP  
006aab046  
Fig 5. Application diagram  
BZB100A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 24 June 2008  
5 of 10  
 
BZB100A  
NXP Semiconductors  
Bidirectional Zener diode  
9. Test information  
9.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
10. Package outline  
1.35  
1.15  
1.1  
0.8  
0.45  
0.15  
1
2.7 1.8  
2.3 1.6  
2
0.40  
0.25  
0.25  
0.10  
Dimensions in mm  
03-12-17  
Fig 6. Package outline SOD323 (SC-76)  
11. Packing information  
Table 8.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number Package  
Description  
Packing quantity  
3000  
-115  
10000  
BZB100A  
SOD323  
4 mm pitch, 8 mm tape and reel  
-135  
[1] For further information and the availability of packing methods, see Section 15.  
BZB100A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 24 June 2008  
6 of 10  
 
 
 
 
 
BZB100A  
NXP Semiconductors  
Bidirectional Zener diode  
12. Soldering  
3.05  
2.1  
solder lands  
solder resist  
1.65 0.95  
0.5 (2×) 0.6 (2×)  
solder paste  
occupied area  
2.2  
Dimensions in mm  
0.5  
(2×)  
0.6  
(2×)  
sod323_fr  
Fig 7. Reflow soldering footprint SOD323 (SC-76)  
5
2.9  
1.5 (2×)  
solder lands  
solder resist  
occupied area  
1.2  
2.75  
Dimensions in mm  
(2×)  
preferred transport  
direction during soldering  
sod323_fw  
Fig 8. Wave soldering footprint SOD323 (SC-76)  
BZB100A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 24 June 2008  
7 of 10  
 
BZB100A  
NXP Semiconductors  
Bidirectional Zener diode  
13. Revision history  
Table 9.  
Revision history  
Document ID  
BZB100A_2  
Modifications:  
Release date  
Data sheet status  
Change notice  
Supersedes  
20080624  
Product data sheet  
-
BZB100A_1  
Section 1.1 “General description”: adapted  
Section 1.2 “Features”: adapted  
Table 2 “Pinning”: graphic symbol amended  
Table 6 “Thermal characteristics”: updated  
Section 8 “Application information”: adapted  
Section 12 “Soldering”: updated  
Section 14 “Legal information”: updated  
BZB100A_1  
20080128  
Product data sheet  
-
-
BZB100A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 24 June 2008  
8 of 10  
 
BZB100A  
NXP Semiconductors  
Bidirectional Zener diode  
14. Legal information  
14.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
14.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
14.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
14.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
15. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BZB100A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 24 June 2008  
9 of 10  
 
 
 
 
 
 
BZB100A  
NXP Semiconductors  
Bidirectional Zener diode  
16. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Application information. . . . . . . . . . . . . . . . . . . 5  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6  
Quality information . . . . . . . . . . . . . . . . . . . . . . 6  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Packing information. . . . . . . . . . . . . . . . . . . . . . 6  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8  
3
4
5
6
7
8
9
9.1  
10  
11  
12  
13  
14  
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
14.1  
14.2  
14.3  
14.4  
15  
16  
Contact information. . . . . . . . . . . . . . . . . . . . . . 9  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2008.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 24 June 2008  
Document identifier: BZB100A_2  
 

相关型号:

BZB784

Voltage regulator double diodes
NXP

BZB784-C10

Voltage regulator double diodes
NXP

BZB784-C10

Voltage regulator double diodesProduction
NEXPERIA

BZB784-C10,115

DIODE ZENER ARRAY 10V SOT323
ETC

BZB784-C11

Voltage regulator double diodes
NXP

BZB784-C11

Voltage regulator double diodesProduction
NEXPERIA

BZB784-C11,115

DIODE ZENER ARRAY 11V SOT323
ETC

BZB784-C12

Voltage regulator double diodes
NXP

BZB784-C12

Voltage regulator double diodesProduction
NEXPERIA

BZB784-C12,115

BZB784 series - Voltage regulator double diodes SC-70 3-Pin
NXP

BZB784-C13

Voltage regulator double diodes
NXP

BZB784-C13

Voltage regulator double diodesProduction
NEXPERIA