BZB984-C11,115 [NXP]
BZB984 series - Voltage regulator double diodes SOT 3-Pin;型号: | BZB984-C11,115 |
厂家: | NXP |
描述: | BZB984 series - Voltage regulator double diodes SOT 3-Pin 测试 光电二极管 |
文件: | 总9页 (文件大小:72K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BZB984 series
Voltage regulator double diodes
Product data sheet
2002 Jun 21
Supersedes data of 2001 Nov 28
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB984 series
FEATURES
PINNING
• Total power dissipation: max. 425 mW
• Approx. 5% VZ tolerance
PIN
1
DESCRIPTION
cathode 1
• Ultra small flat plastic SMD package
• Working voltage range nom. 2.4 to 15 V (E24 range).
2
cathode 2
3
common anode
APPLICATIONS
3
• General regulation functions
• ESD and surge protection.
handbook, halfpage
3
1
2
DESCRIPTION
1
2
Top view
Low-power voltage regulator diodes in a SOT663 ultra
small plastic SMD package.
MHC314
Fig.1 Simplified outline (SOT663) and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZB984-C2V4
BZB984-C2V7
BZB984-C3V0
BZB984-C3V3
BZB984-C3V6
91
92
93
94
95
BZB984-C3V9
BZB984-C4V3
BZB984-C4V7
BZB984-C5V1
BZB984-C5V6
96
97
98
99
9A
BZB984-C6V2
BZB984-C6V8
BZB984-C7V5
BZB984-C8V2
BZB984-C9V1
9B
9C
9D
9E
9F
BZB984-C10
BZB984-C11
BZB984-C12
BZB984-C13
BZB984-C15
9G
9H
9J
9K
9L
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
200
UNIT
IF
continuous forward current
−
mA
IZSM
non-repetitive peak reverse
current
tp = 100 μs; square wave; Tamb = 25 °C; see Table 1
prior to surge
Ptot
total power dissipation
Tamb = 25 °C; 2 diodes loaded; note 1
Tamb = 25 °C; 1 diode loaded; note 1
−
−
−
425
265
40
mW
mW
W
PZSM
non-repetitive peak reverse
dissipation
tp = 100 μs; square wave; Tamb = 25 °C;
prior to surge
Tstg
Tj
storage temperature
junction temperature
−65
+150
150
°C
°C
−
Note
1. Device mounted on an FR4 printed-circuit board.
2002 Jun 21
2
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB984 series
ELECTRICAL CHARACTERISTICS
Total BZB984-C series
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 10 mA; see Fig.2
MAX.
0.9
UNIT
VF
IR
V
reverse current
BZB984-C2V4
BZB984-C2V7
BZB984-C3V0
BZB984-C3V3
BZB984-C3V6
BZB984-C3V9
BZB984-C4V3
BZB984-C4V7
BZB984-C5V1
BZB984-C5V6
BZB984-C6V2
BZB984-C6V8
BZB984-C7V5
BZB984-C8V2
BZB984-C9V1
BZB984-C10
BZB984-C11
BZB984-C12
BZB984-C13
BZB984-C15
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
VR = 10.5 V
50
20
10
5
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
2002 Jun 21
3
Table 1 Per type BZB984-C2V4 to C15
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
VZ (V)
DIFFERENTIAL RESISTANCE
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs;
Tamb = 25 °C
rdif (Ω)
at IZ = 5 mA
BZB984-
Cxxx
Tol. ≈5%
at IZ = 1 mA
TYP. MAX.
at IZ = 5 mA
TYP. MAX.
MIN.
MAX.
TYP.
MAX.
MAX.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
275
300
325
350
375
400
410
425
400
80
600
600
600
600
600
600
600
500
480
400
150
80
70
75
80
85
85
85
80
50
40
15
6
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
−1.3
−1.4
−1.6
−1.8
−1.9
−1.9
−1.7
−1.2
−0.5
1.0
450
6.0
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
40
2.2
30
6
3.0
30
80
6
3.6
40
80
6
4.3
40
100
150
150
150
170
200
6
5.2
50
8
6.0
11
50
10
10
10
10
6.9
90
12
50
7.9
85
13
50
8.8
80
15
50
10.7
75
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB984 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
125
UNIT
K/W
K/W
K/W
K/W
Rth j-s
thermal resistance from junction to soldering point 2 diodes loaded; note 1
1 diode loaded; note 1
230
Rth j-a
thermal resistance from junction to ambient
2 diodes loaded; note 2
1 diode loaded; note 2
294
472
Notes
1. Solder points on cathode tabs.
2. Device mounted on an FR4 printed-circuit board.
Soldering
The only recommended soldering method is reflow soldering.
GRAPHICAL DATA
MLD362
MLD363
300
0.5
handbook, halfpage
handbook, halfpage
S
Z
I
F
(mV/K)
0
4V7
(mA)
4V3
200
−0.5
2V4
2V7
3V9
3V6
−1
−1.5
−2
100
3V3
3V0
0
0.6
0.7
0.8
0.9
1
−1
2
10
1
10
10
V
(V)
I
(mA)
F
Z
BZB984-C2V4 to C4V7.
Tj = 25 °C.
Tj = 25 to 150 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Temperature coefficient as a function of
working current; typical values.
2002 Jun 21
5
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB984 series
MLD364
12
handbook, halfpage
15
S
Z
(mV/K)
13
12
8
11
10
9V1
8V2
4
0
7V5
6V8
6V2
5V6
5V1
−4
−1
2
10
1
10
10
I
(mA)
Z
BZB984-C5V1 to C15.
Tj = 25 to 150 °C.
Fig.4 Temperature coefficient as a function of
working current; typical values.
2002 Jun 21
6
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB984 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT663
D
B
E
X
Y
H
E
3
A
c
1
2
e
b
w M
1
B
p
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.33
0.23
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
01-12-04
02-05-21
SOT663
2002 Jun 21
7
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB984 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 Jun 21
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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Printed in The Netherlands
613514/02/pp9
Date of release: 2002 Jun 21
Document order number: 9397 750 09768
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