BZG03-C39-T [NXP]
DIODE 39 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC, PLASTIC PACKAGE-2, Voltage Regulator Diode;
| 型号： | BZG03-C39-T |
| 厂家： | 
NXP |
| 描述： | DIODE 39 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC, PLASTIC PACKAGE-2, Voltage Regulator Diode 稳压二极管 |
| 文件： | 总7页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
8
BZG03 series
Voltage regulator diodes
1996 Jun 07
Preliminary specification
Supersedes data of October 1993
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
BZG03 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
FEATURES
DESCRIPTION
• Glass passivatedb
DO-214AC surface mountable
package with glass passivated chip.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
cathode
band
handbook, 4 columns
k
a
• UL 94V-O classified plastic
package
• Zener working voltage range:
10 to 270 V for 35 types
• Supplied in 12 mm embossed tape.
Top view
Side view
MSA473
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
total power dissipation
total power dissipation
CONDITIONS
MIN.
MAX.
3.00
1.25
UNIT
Ptot
Ptot
Ttp = 100 °C; see Fig.2
−
−
W
Tamb = 50 °C; see Fig.2; device
W
mounted on an Al2O3 PCB (see Fig.5)
PZSM
non-repetitive peak reverse power tp = 100 µs; square pulse;
−
600
W
dissipation
Tj = 25 °C prior to surge; see Fig.3
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
1996 Jun 07
2
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
BZG03 series
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 0.5 A; see Fig.4
MAX.
UNIT
VF
1.2
V
Per type
Tj = 25 °C unless otherwise specified.
DIFFERENTIAL TEMPERATURE
TEST
REVERSE CURRENT
WORKING VOLTAGE
VZ (V) at IZ
TYPE
No.
RESISTANCE
COEFFICIENT CURRENT at REVERSE VOLTAGE
SUFFIX
rdif (Ω) at IZ
SZ (%/K) at IZ
IR (µA)
(1)
IZ (mA)
VR (V)
MIN.
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
NOM.
10
11
MAX.
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
TYP.
2
MAX.
4
MIN.
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
MAX.
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
MAX.
7
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
7.5
8.2
9.1
10
11
C10
C11
C12
C13
C15
C16
C18
C20
C22
C24
C27
C30
C33
C36
C39
C43
C47
C51
C56
C62
C68
C75
C82
C91
C100
C110
C120
4
7
4
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
4
7
3
5
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
2
5
1
6
1
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
6
1
6
1
6
1
7
1
7
1
8
1
31
35
8
1
34
38
21
21
24
24
25
25
25
25
30
30
60
60
80
80
1
37
41
1
40
46
1
44
50
1
48
54
1
52
60
1
58
66
1
64
72
1
70
79
1
77
87
1
85
96
1
94
106
116
127
5
1
104
114
5
1
5
1
1996 Jun 07
3
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
BZG03 series
DIFFERENTIAL TEMPERATURE
TEST
REVERSE CURRENT
WORKING VOLTAGE
VZ (V) at IZ
TYPE
No.
RESISTANCE
COEFFICIENT CURRENT at REVERSE VOLTAGE
SUFFIX
rdif (Ω) at IZ
SZ (%/K) at IZ
IR (µA)
(1)
IZ (mA)
VR (V)
MIN.
124
NOM.
130
150
160
180
200
220
240
270
MAX.
141
156
171
191
212
233
256
289
TYP.
110
130
150
180
200
350
400
450
MAX.
300
MIN.
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
MAX.
5
5
5
5
5
2
2
2
1
1
1
1
1
1
1
1
100
110
120
130
150
160
180
200
C130
C150
C160
C180
C200
C220
C240
C270
138
153
168
188
208
228
251
300
350
400
500
750
850
1000
Note
1. To complete the type number the suffix is added to the basic type number, e.g. BZG03-C130.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
25
K/W
K/W
K/W
note 1
note 2
100
150
Notes
1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer ≥35 µm, see Fig.5.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.5.
For more information please refer to the “General Part of associated Handbook”.
1996 Jun 07
4
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
BZG03 series
GRAPHICAL DATA
MBH451
MBH452
4
10
4
handbook, halfpage
handbook, halfpage
P
tot
P
(W)
ZSM
(W)
3
3
10
2
1
0
2
10
10
10
−2
−1
0
100
200
10
1
t (ms) 10
p
T (°C)
Solid line: tie-point temperature.
Tj = 25 °C prior to surge.
Dotted line: ambient temperature; device mounted on an Al2O3 PCB
as shown in Fig.5.
Fig.3 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Fig.2 Maximum total power dissipation as a
function of temperature.
MBH453
3
50
handbook, halfpage
I
F
(A)
2
4.5
50
2.5
1
0
1.25
MSB213
0
1
2
V
(V)
F
Tj = 25 °C.
Dimensions in mm.
Fig.4 Forward current as a function of forward
voltage; typical values.
Fig.5 Printed-circuit board for surface mounting.
1996 Jun 07
5
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
BZG03 series
PACKAGE OUTLINE
5.5
5.1
4.5
4.3
2.3
2.0
0.05
0.2
3.3
2.7
MSA414
2.8 1.6
2.4 1.4
Dimensions in mm.
The marking band indicates the cathode.
Fig.6 DO-214AC; SOD106.
1996 Jun 07
6
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
BZG03 series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 07
7
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