BZG03-C39-T [NXP]

DIODE 39 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC, PLASTIC PACKAGE-2, Voltage Regulator Diode;
BZG03-C39-T
型号: BZG03-C39-T
厂家: NXP    NXP
描述:

DIODE 39 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC, PLASTIC PACKAGE-2, Voltage Regulator Diode

稳压二极管
文件: 总7页 (文件大小:35K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
handbook, halfpage  
8  
BZG03 series  
Voltage regulator diodes  
1996 Jun 07  
Preliminary specification  
Supersedes data of October 1993  
Philips Semiconductors  
Preliminary specification  
Voltage regulator diodes  
BZG03 series  
The well-defined void-free case is of a  
transfer-moulded thermo-setting  
plastic.  
FEATURES  
DESCRIPTION  
Glass passivatedb  
DO-214AC surface mountable  
package with glass passivated chip.  
High maximum operating  
temperature  
Low leakage current  
Excellent stability  
cathode  
band  
handbook, 4 columns  
k
a
UL 94V-O classified plastic  
package  
Zener working voltage range:  
10 to 270 V for 35 types  
Supplied in 12 mm embossed tape.  
Top view  
Side view  
MSA473  
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
total power dissipation  
total power dissipation  
CONDITIONS  
MIN.  
MAX.  
3.00  
1.25  
UNIT  
Ptot  
Ptot  
Ttp = 100 °C; see Fig.2  
W
Tamb = 50 °C; see Fig.2; device  
W
mounted on an Al2O3 PCB (see Fig.5)  
PZSM  
non-repetitive peak reverse power tp = 100 µs; square pulse;  
600  
W
dissipation  
Tj = 25 °C prior to surge; see Fig.3  
Tstg  
Tj  
storage temperature  
junction temperature  
65  
65  
+175 °C  
+175 °C  
1996 Jun 07  
2
Philips Semiconductors  
Preliminary specification  
Voltage regulator diodes  
BZG03 series  
ELECTRICAL CHARACTERISTICS  
Total series  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
IF = 0.5 A; see Fig.4  
MAX.  
UNIT  
VF  
1.2  
V
Per type  
Tj = 25 °C unless otherwise specified.  
DIFFERENTIAL TEMPERATURE  
TEST  
REVERSE CURRENT  
WORKING VOLTAGE  
VZ (V) at IZ  
TYPE  
No.  
RESISTANCE  
COEFFICIENT CURRENT at REVERSE VOLTAGE  
SUFFIX  
rdif () at IZ  
SZ (%/K) at IZ  
IR (µA)  
(1)  
IZ (mA)  
VR (V)  
MIN.  
9.4  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
NOM.  
10  
11  
MAX.  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
28.9  
32  
TYP.  
2
MAX.  
4
MIN.  
0.05  
0.05  
0.05  
0.05  
0.05  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.07  
0.07  
0.07  
0.07  
0.08  
0.08  
0.08  
0.08  
0.09  
0.09  
0.09  
0.09  
MAX.  
0.09  
0.10  
0.10  
0.10  
0.10  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.12  
0.12  
0.12  
0.12  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
MAX.  
7
50  
50  
50  
50  
50  
25  
25  
25  
25  
25  
25  
25  
25  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
5
7.5  
8.2  
9.1  
10  
11  
C10  
C11  
C12  
C13  
C15  
C16  
C18  
C20  
C22  
C24  
C27  
C30  
C33  
C36  
C39  
C43  
C47  
C51  
C56  
C62  
C68  
C75  
C82  
C91  
C100  
C110  
C120  
4
7
4
12  
13  
15  
16  
18  
20  
22  
24  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
82  
91  
100  
110  
120  
4
7
3
5
10  
10  
15  
15  
15  
15  
15  
15  
15  
15  
40  
40  
45  
45  
60  
60  
80  
80  
100  
100  
200  
200  
250  
250  
2
5
1
6
1
12  
13  
15  
16  
18  
20  
22  
24  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
82  
91  
6
1
6
1
6
1
7
1
7
1
8
1
31  
35  
8
1
34  
38  
21  
21  
24  
24  
25  
25  
25  
25  
30  
30  
60  
60  
80  
80  
1
37  
41  
1
40  
46  
1
44  
50  
1
48  
54  
1
52  
60  
1
58  
66  
1
64  
72  
1
70  
79  
1
77  
87  
1
85  
96  
1
94  
106  
116  
127  
5
1
104  
114  
5
1
5
1
1996 Jun 07  
3
Philips Semiconductors  
Preliminary specification  
Voltage regulator diodes  
BZG03 series  
DIFFERENTIAL TEMPERATURE  
TEST  
REVERSE CURRENT  
WORKING VOLTAGE  
VZ (V) at IZ  
TYPE  
No.  
RESISTANCE  
COEFFICIENT CURRENT at REVERSE VOLTAGE  
SUFFIX  
rdif () at IZ  
SZ (%/K) at IZ  
IR (µA)  
(1)  
IZ (mA)  
VR (V)  
MIN.  
124  
NOM.  
130  
150  
160  
180  
200  
220  
240  
270  
MAX.  
141  
156  
171  
191  
212  
233  
256  
289  
TYP.  
110  
130  
150  
180  
200  
350  
400  
450  
MAX.  
300  
MIN.  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
MAX.  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
MAX.  
5
5
5
5
5
2
2
2
1
1
1
1
1
1
1
1
100  
110  
120  
130  
150  
160  
180  
200  
C130  
C150  
C160  
C180  
C200  
C220  
C240  
C270  
138  
153  
168  
188  
208  
228  
251  
300  
350  
400  
500  
750  
850  
1000  
Note  
1. To complete the type number the suffix is added to the basic type number, e.g. BZG03-C130.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-tp  
Rth j-a  
thermal resistance from junction to tie-point  
thermal resistance from junction to ambient  
25  
K/W  
K/W  
K/W  
note 1  
note 2  
100  
150  
Notes  
1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer 35 µm, see Fig.5.  
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.5.  
For more information please refer to the “General Part of associated Handbook”.  
1996 Jun 07  
4
Philips Semiconductors  
Preliminary specification  
Voltage regulator diodes  
BZG03 series  
GRAPHICAL DATA  
MBH451  
MBH452  
4
10  
4
handbook, halfpage  
handbook, halfpage  
P
tot  
P
(W)  
ZSM  
(W)  
3
3
10  
2
1
0
2
10  
10  
10  
2  
1  
0
100  
200  
10  
1
t (ms) 10  
p
T (°C)  
Solid line: tie-point temperature.  
Tj = 25 °C prior to surge.  
Dotted line: ambient temperature; device mounted on an Al2O3 PCB  
as shown in Fig.5.  
Fig.3 Maximum non-repetitive peak reverse  
power dissipation as a function of pulse  
duration (square pulse).  
Fig.2 Maximum total power dissipation as a  
function of temperature.  
MBH453  
3
50  
handbook, halfpage  
I
F
(A)  
2
4.5  
50  
2.5  
1
0
1.25  
MSB213  
0
1
2
V
(V)  
F
Tj = 25 °C.  
Dimensions in mm.  
Fig.4 Forward current as a function of forward  
voltage; typical values.  
Fig.5 Printed-circuit board for surface mounting.  
1996 Jun 07  
5
Philips Semiconductors  
Preliminary specification  
Voltage regulator diodes  
BZG03 series  
PACKAGE OUTLINE  
5.5  
5.1  
4.5  
4.3  
2.3  
2.0  
0.05  
0.2  
3.3  
2.7  
MSA414  
2.8 1.6  
2.4 1.4  
Dimensions in mm.  
The marking band indicates the cathode.  
Fig.6 DO-214AC; SOD106.  
1996 Jun 07  
6
Philips Semiconductors  
Preliminary specification  
Voltage regulator diodes  
BZG03 series  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 Jun 07  
7

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